公开(公告)号：US09773742B2

公开(公告)日：2017-09-26

申请号：US14132729

申请日：2013-12-18

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Adel Elsherbini ,  Valluri Rao

IPC: H01Q21/06 ,  H01Q1/38 ,  H01L23/66 ,  H01Q21/00 ,  H01L21/48 ,  H01L23/498 ,  H01L21/52 ,  H01Q1/22 ,  H01Q23/00 ,  H01L23/00

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/52 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/19 ,  H01L24/20 ,  H01L2223/6622 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/73267 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/18162 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/38 ,  H01Q21/0006 ,  H01Q21/0093 ,  H01Q23/00

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

公开(公告)号：US10453635B2

公开(公告)日：2019-10-22

申请号：US15633237

申请日：2017-06-26

Applicant: Intel Corporation

Inventor： Qing Ma ,  Johanna Swan ,  Valluri Rao ,  Feras Eid

IPC: H01Q1/38 ,  H01H59/00 ,  H01Q5/314 ,  H01H50/00

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

公开(公告)号：US09267944B2

公开(公告)日：2016-02-23

申请号：US14594691

申请日：2015-01-12

Applicant: Intel Corporation

Inventor： Yuegang Zhang ,  Andrew Berlin ,  Qing Ma ,  Li-Peng Wang ,  Valluri Rao ,  Mineo Yamakawa

IPC: G01N15/06 ,  G01N33/543 ,  G01N29/24 ,  B82Y15/00 ,  B82Y30/00 ,  G01N29/02 ,  G01N29/036 ,  G01N29/34 ,  G01N33/00 ,  G01N27/12

CPC classification number: G01N33/54373 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/126 ,  G01N29/022 ,  G01N29/036 ,  G01N29/2437 ,  G01N29/348 ,  G01N33/0031 ,  G01N2291/02466 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0426 ,  Y10T436/11 ,  Y10T436/143333 ,  Y10T436/144444 ,  Y10T436/25375

Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.

公开(公告)号：US20150125965A1

公开(公告)日：2015-05-07

申请号：US14594691

申请日：2015-01-12

Applicant: Intel Corporation

Inventor： Yuegang Zhang ,  Andrew Berlin ,  Qing Ma ,  Li-Peng Wang ,  Valluri Rao ,  Mineo Yamakawa

IPC: G01N33/543 ,  G01N29/02 ,  G01N29/24

CPC classification number: G01N33/54373 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/126 ,  G01N29/022 ,  G01N29/036 ,  G01N29/2437 ,  G01N29/348 ,  G01N33/0031 ,  G01N2291/02466 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0426 ,  Y10T436/11 ,  Y10T436/143333 ,  Y10T436/144444 ,  Y10T436/25375

Abstract: Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response.

Abstract translation: 使用包含具有功能化表面以与靶生物分子反应的共振器的生物传感器来检测样品中存在生物分子的系统和方法。 在一个实施例中，器件包括压电谐振器，其具有被配置为与靶分子反应的官能化表面，从而改变谐振器的质量和/或电荷，从而改变谐振器的频率响应。 将曝光后的谐振器频率响应与参考值进行比较，例如在暴露于采样之前的频率响应，存储的基准频率响应或控制谐振器的频率响应。

公开(公告)号：US11532601B2

公开(公告)日：2022-12-20

申请号：US16386200

申请日：2019-04-16

Applicant: Intel Corporation

Inventor： Han Wui Then ,  Robert Chau ,  Valluri Rao ,  Niloy Mukherjee ,  Marko Radosavljevic ,  Ravi Pillarisetty ,  Gilbert Dewey ,  Jack Kavalieros

IPC: H01L25/07 ,  H01L29/78 ,  H01L21/8258 ,  H01L29/66 ,  H01L29/778 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L25/00 ,  H01L29/423 ,  H01L29/20

Abstract: System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) that is capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits. In embodiments, the III-N transistor architecture is amenable to scaling to sustain a trajectory of performance improvements over many successive device generations. In embodiments, the III-N transistor architecture is amenable to monolithic integration with group IV transistor architectures, such as planar and non-planar silicon CMOS transistor technologies. Planar and non-planar HEMT embodiments having one or more of recessed gates, symmetrical source and drain, regrown source/drains are formed with a replacement gate technique permitting enhancement mode operation and good gate passivation.

公开(公告)号：US10658312B2

公开(公告)日：2020-05-19

申请号：US15712270

申请日：2017-09-22

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Adel Elsherbini ,  Valluri Rao

IPC: H01L23/66 ,  H01Q1/38 ,  H01L21/48 ,  H01L23/498 ,  H01L21/52 ,  H01L23/00 ,  H01Q1/22 ,  H01Q21/00 ,  H01Q23/00

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

公开(公告)号：US10156583B2

公开(公告)日：2018-12-18

申请号：US15051856

申请日：2016-02-24

Applicant: Intel Corporation

Inventor： Qing Ma ,  Valluri Rao ,  Feras Eid ,  Kevin Lin ,  Weng Hong Teh ,  Johanna M. Swan ,  Robert L. Sankman

IPC: H01F7/06 ,  G01P15/097 ,  G01P15/105 ,  G01P15/18

Abstract: A method of manufacturing an accelerometer, including placing a magnet on a substrate, laminating a dielectric layer over the magnet, forming a conductive layer over the dielectric layer, the conductive layer including a mass and a conductive path overlying the magnet, removing a portion of the dielectric layer proximate the mass and conductive path such that the mass is movable in response to acceleration of the accelerometer, and forming a dielectric layer over the mass to form a space between the mass and the dielectric layer formed over the mass sufficiently clear such that the mass remains movable.

公开(公告)号：US20180138001A1

公开(公告)日：2018-05-17

申请号：US15633237

申请日：2017-06-26

Applicant: Intel Corporation

Inventor： Qing Ma ,  Johanna M. Swan ,  Valluri Rao ,  Feras Eid

IPC: H01H59/00 ,  H01H50/00 ,  H01Q5/314

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.

公开(公告)号：US20180012852A1

公开(公告)日：2018-01-11

申请号：US15712270

申请日：2017-09-22

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Adel A. Elsherbini ,  Valluri Rao

IPC: H01L23/66 ,  H01L21/48 ,  H01Q21/00 ,  H01L23/00 ,  H01Q1/22 ,  H01L21/52 ,  H01L23/498 ,  H01Q23/00 ,  H01Q1/38

CPC classification number: H01L23/66 ,  H01L21/4853 ,  H01L21/52 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/19 ,  H01L24/20 ,  H01L2223/6622 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/73267 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/18162 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/38 ,  H01Q21/0006 ,  H01Q21/0093 ,  H01Q23/00

Abstract: Embodiments of an embedded mm-wave radio integrated circuit into a substrate of a phased array module are disclosed. In some embodiments, the phased array module includes a first set of substrate layers made of a first material. The mm-wave radio integrated circuit may be embedded in the first set of substrate layers. A second set of substrate layers may be coupled to the first set of substrate layers. The second set of substrate layers may be made of a second material that has a lower electrical loss than the first material. The second set of substrate layers may include a plurality of antenna elements coupled through vias to the mm-wave radio integrated circuit.

公开(公告)号：US09691579B2

公开(公告)日：2017-06-27

申请号：US14368771

申请日：2013-12-17

Applicant: Intel Corporation

Inventor： Qing Ma ,  Johanna Swan ,  Valluri Rao ,  Feras Eid

IPC: H01H59/00 ,  H01Q5/314 ,  H01H50/00

CPC classification number: H01H59/0009 ,  H01H50/005 ,  H01H2229/016 ,  H01H2229/05 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01Q5/314

Abstract: An electronic device and methods including a switch formed in a chip package are shown. An electronic device and methods including a switch formed in a polymer based dielectric are shown. Examples of switches shown include microelectromechanical system (MEMS) structures, such as cantilever switches and/or shunt switches.