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    ION BEAM DEVICE AND CLEANING METHOD FOR GAS FIELD ION SOURCE
    4.
    发明申请
    ION BEAM DEVICE AND CLEANING METHOD FOR GAS FIELD ION SOURCE 审中-公开

    公开(公告)号：US20200294776A1

    公开(公告)日：2020-09-17

    申请号：US15932307

    申请日：2015-08-20

    Applicant: Hitachi High Technologies Corporation

    Inventor： Yoshimi KAWANAMI ,  Atsushi KOBARU ,  Tomihiro HASHIZUME ,  Hiroyasu SHICHI ,  Shinichi MATSUBARA

    IPC: H01J37/32 ,  H01J37/08 ,  H01J37/28 ,  H01J27/26

    Abstract: An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

    ION BEAM DEVICE
    7.
    发明申请
    ION BEAM DEVICE 审中-公开
    离子束装置

    公开(公告)号：US20170076902A1

    公开(公告)日：2017-03-16

    申请号：US15361642

    申请日：2016-11-28

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Norihide SAHO ,  Masahiro YAMAOKA ,  Noriaki ARAI

    IPC: H01J27/26

    CPC classification number: H01J27/26 ,  H01J27/022 ,  H01J37/023 ,  H01J37/067 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/2803

    Abstract: An ion beam device according to the present invention includes a gas field ion source including an emitter tip supported by an emitter base mount, a ionization chamber including an extraction electrode and being configured to surround the emitter tip, and a gas supply tube. A center axis line of the extraction electrode overlaps or is parallel to a center axis line of the ion irradiation light system, and a center axis line passing the emitter tip and the emitter base mount is inclinable with respect to a center axis line of the ionization chamber. Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

    Abstract translation: 根据本发明的离子束装置包括气体离子源，其包括由发射极基座支撑的发射极尖端，包括引出电极并被配置为围绕发射极尖端的电离室和气体供应管。 引出电极的中心轴线与离​​子照射光系统的中心轴线重叠或平行，并且通过发射极尖端和发射极基座的中心轴线相对于电离的中心轴线是可倾斜的 房间。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

    ION BEAM PROCESSING APPARATUS
    8.
    发明申请
    ION BEAM PROCESSING APPARATUS 审中-公开
    离子束加工装置

    公开(公告)号：US20130320209A1

    公开(公告)日：2013-12-05

    申请号：US13873725

    申请日：2013-04-30

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Hiroyasu SHICHI ,  Satoshi TOMIMATSU ,  Noriyuki KANEOKA ,  Kaoru UMEMURA ,  Koji ISHIGURO

    IPC: H01J37/26

    CPC classification number: H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

    Abstract: An ion beam processing apparatus includes an ion beam irradiation optical system that irradiates a rectangular ion beam to a sample on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage to hold a test piece, extracted from the sample. The ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.

    Abstract translation: 一种离子束处理装置，包括：离子束照射光学系统，其将矩形离子束照射到第一样品台上的样品，向样品照射电子束的电子束照射光学系统;以及第二样品台， 试样，从样品中提取。 离子束可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。

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