公开(公告)号：US20190051491A1

公开(公告)日：2019-02-14

申请号：US16074601

申请日：2016-02-05

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shinichi MATSUBARA ,  Hiroyasu SHICHI ,  Tomihiro HASHIZUME ,  Yoshimi KAWANAMI

IPC: H01J37/285 ,  H01J27/02 ,  H01J37/08 ,  G02B21/00

Abstract: An H3+ ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H3+ ion can be obtained by use of a probe current within a voltage range 21 around a second peak 23 occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.

公开(公告)号：US20200294776A1

公开(公告)日：2020-09-17

申请号：US15932307

申请日：2015-08-20

Applicant: Hitachi High Technologies Corporation

Inventor： Yoshimi KAWANAMI ,  Atsushi KOBARU ,  Tomihiro HASHIZUME ,  Hiroyasu SHICHI ,  Shinichi MATSUBARA

IPC: H01J37/32 ,  H01J37/08 ,  H01J37/28 ,  H01J27/26

Abstract: An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

公开(公告)号：US20170352517A1

公开(公告)日：2017-12-07

申请号：US15514735

申请日：2015-09-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Yoshimi KAWANAMI ,  Hiroyuki MUTO

IPC: H01J27/26 ,  H01J37/08 ,  H01J37/18 ,  H01J37/28

CPC classification number: H01J27/26 ,  H01J37/08 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/006 ,  H01J2237/0807

Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

公开(公告)号：US20140326897A1

公开(公告)日：2014-11-06

申请号：US14332923

申请日：2014-07-16

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshimi KAWANAMI ,  Tohru ISHITANI

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/3056 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

Abstract: Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.

Abstract translation: 提供能够发出适合于处理样品的高亮度的重离子的气体电离离子源。 根据本发明的气体电离离子源包括温度控制器，其分别控制发射极电极（1）的末端的温度和气体供给单元的气体注入口部分（3）的温度。

公开(公告)号：US20190295802A1

公开(公告)日：2019-09-26

申请号：US16439005

申请日：2019-06-12

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Yoshimi KAWANAMI ,  Hiroyuki MUTO

IPC: H01J27/26 ,  H01J37/28 ,  H01J37/18 ,  H01J37/08

Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

公开(公告)号：US20170323764A1

公开(公告)日：2017-11-09

申请号：US15526644

申请日：2014-11-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki MUTO ,  Yoshimi KAWANAMI

IPC: H01J37/28 ,  H01J27/26 ,  F25D19/00 ,  H01J27/02 ,  H01J37/285 ,  H01J37/147

CPC classification number: H01J37/28 ,  F25B2500/13 ,  F25D19/006 ,  H01J27/022 ,  H01J27/26 ,  H01J37/08 ,  H01J37/1474 ,  H01J37/285 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/0807

Abstract: In this invention, vibrations generated by a freezer from a cooling mechanism for cooling an ion source emitter tip are prevented from being transmitted to the emitter tip as much as possible, while the cooling capability of the cooling mechanism is improved widely. The ion beam device (10) is equipped with: an ion source housing (22) provided with an emitter tip (45) and defining an ion source chamber (27) supplied with an ionization gas or gas molecules; a gas pot (51) provided in the ion source chamber (27) so as to be thermally connected to the emitter tip (45) and accommodated so as to have no direct physical contact with a cooling stage (57) of a freezer (52); and a spacer (59) provided on the peripheral surface of the cooling stage (57) housed by the gas pot (51) and maintaining a given interval or greater between the peripheral surface of the cooling stage (57) and the internal peripheral surface of the gas pot (52).

公开(公告)号：US20170229277A1

公开(公告)日：2017-08-10

申请号：US15501584

申请日：2015-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Shinichi MATSUBARA ,  Hiroyasu SHICHI ,  Yoshimi KAWANAMI ,  Tomihiro HASHIZUME

IPC: H01J37/08 ,  H01J37/18 ,  H01J37/28

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/022 ,  H01J2237/0807 ,  H01J2237/1825

Abstract: A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

公开(公告)号：US20160225575A1

公开(公告)日：2016-08-04

申请号：US15021350

申请日：2014-10-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki MUTO ,  Yoshimi KAWANAMI ,  Hiroyasu SHICHI ,  Shinichi MATSUBARA

IPC: H01J37/08 ,  H01J37/147 ,  H01J37/18 ,  H01J37/285

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/1474 ,  H01J37/18 ,  H01J37/285 ,  H01J37/3005 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807 ,  H01J2237/28

Abstract: The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip.

Abstract translation: 本发明的目的是提供一种即使在降低冷却温度以观察具有高信噪比的样品的情况下，也能够在发射极尖端的前端稳定地形成具有一个原子的纳米锥体的离子束装置， 噪音比。 在本发明中，将从电场离子化的气体离子源产生的离子束照射到样品上以观察或处理样品的离子束装置，将发射极尖端的温度保持在高于 用于产生离子束并低于室温的第一温度，将提取电压设置为高于产生离子束时使用的第一电压的第二电压，并且当形成时，引起发射极尖端前端的原子的场蒸发 纳米锥体在发射极尖端的前端具有一个原子。