Invention Application
- Patent Title: Ion Beam Device
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Application No.: US16439005Application Date: 2019-06-12
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Publication No.: US20190295802A1Publication Date: 2019-09-26
- Inventor: Hiroyasu SHICHI , Shinichi MATSUBARA , Yoshimi KAWANAMI , Hiroyuki MUTO
- Applicant: Hitachi High-Technologies Corporation
- Priority: JP2014-207229 20141008
- Main IPC: H01J27/26
- IPC: H01J27/26 ; H01J37/28 ; H01J37/18 ; H01J37/08

Abstract:
In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.
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