Invention Application
- Patent Title: ION BEAM PROCESSING APPARATUS
- Patent Title (中): 离子束加工装置
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Application No.: US13873725Application Date: 2013-04-30
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Publication No.: US20130320209A1Publication Date: 2013-12-05
- Inventor: Hiroyasu SHICHI , Satoshi TOMIMATSU , Noriyuki KANEOKA , Kaoru UMEMURA , Koji ISHIGURO
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2006-072600 20060316
- Main IPC: H01J37/26
- IPC: H01J37/26

Abstract:
An ion beam processing apparatus includes an ion beam irradiation optical system that irradiates a rectangular ion beam to a sample on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage to hold a test piece, extracted from the sample. The ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
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