公开(公告)号：US20180286633A1

公开(公告)日：2018-10-04

申请号：US15760994

申请日：2015-09-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kengo ASAI ,  Toru IWAYA ,  Hisayuki TAKASU ,  Hiroyasu SHICHI

IPC: H01J37/31 ,  H01J37/28 ,  H01J37/20 ,  H01J37/09 ,  H01J37/08

CPC classification number: H01J37/31 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/0262 ,  H01J2237/0264 ,  H01J2237/04732 ,  H01J2237/082 ,  H01J2237/31745

Abstract: To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gun 100 that includes a permanent magnet 114 and that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shield 172 for reducing a leakage magnetic field from the permanent magnet 114 to the electron microscope column is provided.

公开(公告)号：US20190272973A1

公开(公告)日：2019-09-05

申请号：US16320525

申请日：2016-08-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Asako KANEKO ,  Hisayuki TAKASU ,  Toru IWAYA

IPC: H01J37/20 ,  H01J37/305 ,  H01J37/09

Abstract: A charged particle beam device that can improve machining position precision in section processing using a shielding plate is provided. The invention is directed to a charged particle beam device including: an ion source (101); a sample stand (106) on which a sample (107) is mounted; a shielding plate (108) placed so that a portion of the sample (107) is exposed when seen from the ion source (101); and tilt units (123, 124) that tilt the sample (107) and the shielding plate (108) relative to the irradiation direction of an ion beam (102) from the ion source (101) to the sample (107).

公开(公告)号：US20170221671A1

公开(公告)日：2017-08-03

申请号：US15500449

申请日：2015-07-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Kengo ASAI ,  Hiroyasu SHICHI ,  Hisayuki TAKASU ,  Toru IWAYA

IPC: H01J37/08 ,  H01J27/04 ,  H01J37/30

CPC classification number: H01J37/08 ,  H01J27/04 ,  H01J37/30 ,  H01J37/305 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/303

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method.An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

公开(公告)号：US20160163508A1

公开(公告)日：2016-06-09

申请号：US15011980

申请日：2016-02-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Toru IWAYA ,  Hirobumi MUTO ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Asako KANEKO

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/30

CPC classification number: H01J37/3053 ,  H01J37/20 ,  H01J37/3005 ,  H01J37/3007 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/26

Abstract: An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

公开(公告)号：US20210287871A1

公开(公告)日：2021-09-16

申请号：US16316289

申请日：2016-07-14

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kengo ASAI ,  Hiroyasu SHICHI ,  Toru IWAYA ,  Hisayuki TAKASU

IPC: H01J37/08 ,  H01J37/09 ,  H01J37/305

Abstract: To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

公开(公告)号：US20180277335A1

公开(公告)日：2018-09-27

申请号：US15547315

申请日：2015-01-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Toru IWAYA ,  Hisayuki TAKASU ,  Sakae KOUBORI ,  Atsushi KAMINO ,  Kento HORINOUCHI

IPC: H01J37/20 ,  H01J37/26 ,  H01J37/31

CPC classification number: H01J37/20 ,  H01J37/261 ,  H01J37/305 ,  H01J37/31

Abstract: The present invention relates to adjustment of a mask position by driving an R-axis of an electron microscope in order to adjust the mask position with high accuracy while performing observation by the electron microscope without providing a heat generation source inside the electron microscope. The R-axis originally exists in a sample chamber of the electron microscope, which enables control with high accuracy. The R-axis driving of a sample stage can be substituted by raster rotation, therefore, the mask position can be adjusted with high accuracy while performing observation by the electron microscope according to the present invention.

公开(公告)号：US20170047198A1

公开(公告)日：2017-02-16

申请号：US15306510

申请日：2014-05-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Kento HORINOUCHI ,  Atsushi KAMINO ,  Toru IWAYA ,  Hisayuki TAKASU

IPC: H01J37/305 ,  H01J37/20 ,  G01N1/32

CPC classification number: H01J37/305 ,  G01N1/32 ,  H01J37/09 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/045 ,  H01J2237/3151

Abstract: Provided is a technology for suppressing a heat rise in a sample, the heat rise being generated due to ion beam irradiation at a low acceleration voltage. A blocking plate, which is different from a mask, is disposed in front of a sample. The blocking plate has an opening that overlaps a processing surface, and ion beams pass only through the opening of the blocking plate, and in the areas excluding the opening, the ion beams are blocked by the blocking plate, and the sample is not irradiated thereby. Furthermore, the heat rise in the sample is further suppressed by cooling the blocking plate.

Abstract translation: 本发明提供一种抑制试样的热升高的技术，由于在低加速电压下的离子束照射而产生热量上升。 与样品不同的阻挡板被放置在样品的前面。 阻挡板具有与处理面重叠的开口，离子束仅穿过阻挡板的开口，并且在除开口以外的区域中，离子束被阻挡板阻挡，并且样品不被照射 。 此外，通过冷却阻挡板进一步抑制样品中的热升高。

公开(公告)号：US20180301318A1

公开(公告)日：2018-10-18

申请号：US16012423

申请日：2018-06-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Toru IWAYA ,  Hirobumi MUTO ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Asako KANEKO

IPC: H01J37/305 ,  H01J37/30 ,  H01J37/304 ,  H01J37/20

Abstract: An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

公开(公告)号：US20180130630A1

公开(公告)日：2018-05-10

申请号：US15574873

申请日：2015-05-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Yuki TANI ,  Hisayuki TAKASU ,  Shuichi TAKEUCHI

IPC: H01J27/04 ,  H01J37/302 ,  H01J37/08 ,  H01J37/24 ,  H01J37/305

CPC classification number: H01J27/04 ,  H01J37/08 ,  H01J37/243 ,  H01J37/30 ,  H01J37/302 ,  H01J37/305 ,  H01J2237/08

Abstract: An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

公开(公告)号：US20170221677A1

公开(公告)日：2017-08-03

申请号：US15500392

申请日：2015-07-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Kengo ASAI ,  Hiroyasu SHICHI ,  Hisayuki TAKASU ,  Toru IWAYA

IPC: H01J37/302 ,  H01J37/08 ,  H01J37/305

CPC classification number: H01J37/302 ,  H01J27/04 ,  H01J37/08 ,  H01J37/243 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J2237/08 ,  H01J2237/30461 ,  H01J2237/3151

Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.