公开(公告)号：US10432152B2

公开(公告)日：2019-10-01

申请号：US14919990

申请日：2015-10-22

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Michael E. Watts ,  Jeffrey K. Jones ,  Ning Zhu ,  Iouri Volokhine

IPC: H03F1/56 ,  H03F3/195 ,  H01G4/30 ,  H01G4/38 ,  H01L23/66 ,  H01F27/28 ,  H01G4/005 ,  H01G4/12 ,  H03F3/213 ,  H03H7/38 ,  H05K1/11 ,  H01L23/00 ,  H01G4/40

Abstract: A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.

公开(公告)号：US09787254B2

公开(公告)日：2017-10-10

申请号：US14862944

申请日：2015-09-23

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： David F. Abdo ,  Jeffrey K. Jones

IPC: H01L23/31 ,  H01L23/66 ,  H01L23/367 ,  H01L21/56 ,  H03F1/30 ,  H01L23/00 ,  H01L23/433 ,  H01L23/522 ,  H01L23/36 ,  H01L23/48 ,  H01L23/482 ,  H03F1/02 ,  H03F1/56 ,  H03F3/193 ,  H03F3/195

CPC classification number: H03F1/301 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/66 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2223/6644 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/3303 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2924/1304 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/1815 ,  H03F1/0288 ,  H03F1/565 ,  H03F3/193 ,  H03F3/195 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/447 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Embodiments include packaged semiconductor devices and methods of manufacturing packaged semiconductor devices. A semiconductor die includes a conductive feature coupled to a bottom surface of the die. The conductive feature only partially covers the bottom die surface to define a conductor-less region that spans a portion of the bottom die surface. The die is encapsulated by attaching the encapsulant material to the bottom die surface (e.g., including over the conductor-less region). The encapsulant material includes an opening that exposes the conductive feature. After encapsulating the die, a heatsink is positioned within the opening, and a surface of the heatsink is attached to the conductive feature. Because the heatsink is attached after encapsulating the die, the heatsink sidewalls are not directly bonded to the encapsulant material.

公开(公告)号：US09509251B2

公开(公告)日：2016-11-29

申请号：US14832525

申请日：2015-08-21

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Jeffrey K. Jones

IPC: H03F3/195 ,  H03F1/02 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L21/56 ,  H01L23/522 ,  H03F3/19 ,  H01L23/535

CPC classification number: H01L21/561 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/535 ,  H01L23/66 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/3303 ,  H01L2224/33519 ,  H01L2224/4813 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H03F1/565 ,  H03F3/193 ,  H03F2200/451 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2224/83 ,  H01L2224/83851 ,  H01L2924/00 ,  H01L2224/45099

Abstract: An amplifier module includes a module substrate. Conductive interconnect structures and an amplifier device are coupled to a top surface of the module substrate. The interconnect structures partially cover the module substrate top surface to define conductor-less areas at the top surface. The amplifier device includes a semiconductor substrate, a transistor, a conductive feature coupled to a bottom surface of the semiconductor substrate and to at least one of the interconnect structures, and a filter circuit electrically coupled to the transistor. The conductive feature only partially covers the semiconductor substrate bottom surface to define a conductor-less region that spans a portion of the bottom surface. The conductor-less region is aligned with at least one of the conductor-less areas at the module substrate top surface. The filter circuit includes a passive component formed over a portion of the semiconductor substrate top surface that is directly opposite the conductor-less region.

Abstract translation: 放大器模块包括模块基板。 导电互连结构和放大器装置耦合到模块基板的顶表面。 互连结构部分地覆盖模块衬底顶表面以限定顶表面处的无导体区域。 放大器装置包括半导体衬底，晶体管，耦合到半导体衬底的底表面和至少一个互连结构的导电特征，以及电耦合到晶体管的滤波器电路。 导电特征仅部分地覆盖半导体衬底底表面以限定跨越底表面的一部分的无导体区域。 无导体区域与模块衬底顶表面处的至少一个无导体区域对准。 滤波器电路包括形成在半导体衬底顶表面的与无导体区域正对的一部分上的无源部件。

公开(公告)号：US09748185B2

公开(公告)日：2017-08-29

申请号：US15050176

申请日：2016-02-22

Applicant: Freescale Semiconductor, Inc.

Inventor： Lakshminarayan Viswanathan ,  Jeffrey K. Jones ,  Scott D. Marshall

IPC: H01L27/108 ,  H01L29/94 ,  H01L31/119 ,  H01L23/66 ,  H01L23/047 ,  H01L23/00 ,  H01L23/495

CPC classification number: H01L23/66 ,  H01L23/047 ,  H01L23/49589 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Embodiments of semiconductor devices (e.g., RF devices) include a substrate, an isolation structure, an active device, a lead, and a circuit. The isolation structure is coupled to the substrate, and includes an opening. An active device area is defined by a portion of the substrate surface that is exposed through the opening. The active device is coupled to the substrate surface within the active device area. The circuit is electrically coupled between the active device and the lead. The circuit includes one or more elements positioned outside the active device area (e.g., physically coupled to the isolation structure and/or under the lead). The elements positioned outside the active device area may include elements of an envelope termination circuit and/or an impedance matching circuit. Embodiments also include method of manufacturing such semiconductor devices.

公开(公告)号：US09571044B1

公开(公告)日：2017-02-14

申请号：US14919513

申请日：2015-10-21

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Ning Zhu ,  Damon G. Holmes ,  Jeffrey K. Jones

IPC: H03F3/04 ,  H03F1/42 ,  H03F3/193 ,  H03F1/56

CPC classification number: H03F1/565 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/49175 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/309 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/402 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2200/75 ,  H01L2924/00014

Abstract: Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The second shunt inductance and the shunt capacitor form a series resonant circuit in proximity to a center operating frequency of the amplifier, and an RF cold point node is present between the first and second shunt inductances. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold point node and the ground reference node.

Abstract translation: RF放大器的实施例包括具有控制端子和第一和第二载流端子的晶体管，以及耦合在第一载流端子和接地参考节点之间的分流电路。 分路电路包括第一并联电感，第二并联电感和串联耦合的并联电容器。 第二并联电感和并联电容器在放大器的中心工作频率附近形成串联谐振电路，并且RF冷点节点存在于第一和第二分流电感之间。 RF放大器还包括耦合在RF冷点节点和接地参考节点之间的视频带宽电路。

公开(公告)号：US20160126905A1

公开(公告)日：2016-05-05

申请号：US14529407

申请日：2014-10-31

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： LEI ZHAO ,  Jeffrey K. Jones ,  Basim H. Noori ,  Michael E. Watts

IPC: H03F1/56 ,  H03F1/02 ,  H01L23/64 ,  H03F3/21 ,  H01L25/00 ,  H01L25/18 ,  H03F1/42 ,  H03F3/19

CPC classification number: H03F1/565 ,  H01L23/3121 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6688 ,  H01L2224/04042 ,  H01L2224/05644 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/16251 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H03F1/0288 ,  H03F1/42 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/0665

Abstract: An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.

Abstract translation: 放大器的实施例具有由低截止频率和上限截止频率定义的带宽。 放大器包括输入阻抗匹配电路和晶体管。 晶体管具有栅极，耦合到放大器的输出的第一电流导通端子和耦合到参考节点的第二导电端子。 输入阻抗匹配电路具有耦合到放大器的输入的滤波器输入，耦合到晶体管的栅极的滤波器输出以及耦合在滤波器输入和滤波器输出之间的多极滤波器。 滤波器的第一极点位于带宽内的第一频率处，并且滤波器的第二极点位于带宽外的第二频率处。 输入阻抗匹配电路被配置为对输入RF信号进行滤波以在滤波器输出处产生经滤波的RF信号。

公开(公告)号：US09941845B2

公开(公告)日：2018-04-10

申请号：US15237015

申请日：2016-08-15

Applicant: Freescale Semiconductor, Inc.

Inventor： Basim H. Noori ,  Gerard J. Bouisse ,  Jeffrey K. Jones ,  Jean-Christophe Nanan ,  Jaime A. Pla

IPC: H03F1/56 ,  H03F3/68 ,  H03F3/195 ,  H03F1/02 ,  H03F3/21

CPC classification number: H03F1/565 ,  H01L2224/49175 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/21 ,  H03F3/68 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/423 ,  H03F2200/451

Abstract: Apparatus are provided for amplifier systems and related circuits are provided. An exemplary circuit includes a main amplifier arrangement, first impedance matching circuitry coupled between the output of the main amplifier arrangement and a first output of the circuit, a peaking amplifier arrangement, and second impedance matching circuitry coupled between the output of the peaking amplifier arrangement and a second output of the circuit. In one exemplary embodiment, the first impedance matching circuitry and the second impedance matching circuitry have different circuit topologies and different physical topologies.

公开(公告)号：US09762185B2

公开(公告)日：2017-09-12

申请号：US14942419

申请日：2015-11-16

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Hussain H. Ladhani ,  Gerard J. Bouisse ,  Jeffrey K. Jones

IPC: H03F3/04 ,  H03F1/32 ,  H03F1/02 ,  H03F1/56 ,  H03F3/193 ,  H03F3/26 ,  H03F3/21 ,  H03F1/42

CPC classification number: H03F1/3205 ,  H03F1/0211 ,  H03F1/0288 ,  H03F1/3247 ,  H03F1/42 ,  H03F1/565 ,  H03F3/04 ,  H03F3/193 ,  H03F3/21 ,  H03F3/211 ,  H03F3/265 ,  H03F2200/225 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/21106

Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

公开(公告)号：US09692363B2

公开(公告)日：2017-06-27

申请号：US14919511

申请日：2015-10-21

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Ning Zhu ,  Damon G. Holmes ,  Jeffrey K. Jones

IPC: H03F3/04 ,  H03F1/56 ,  H03F3/19

CPC classification number: H03F1/565 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03F3/19 ,  H03F3/195 ,  H03F2200/108 ,  H03F2200/181 ,  H03F2200/216 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/309 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/402 ,  H03F2200/451 ,  H03F2200/552 ,  H03F2200/75 ,  H01L2924/00014

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.

公开(公告)号：US09564861B2

公开(公告)日：2017-02-07

申请号：US14529407

申请日：2014-10-31

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Lei Zhao ,  Jeffrey K. Jones ,  Basim H. Noori ,  Michael E. Watts

IPC: H03F3/191 ,  H03F1/56 ,  H03F1/42 ,  H03F1/02 ,  H03F3/193 ,  H01L23/66 ,  H01L23/00 ,  H01L23/31

CPC classification number: H03F1/565 ,  H01L23/3121 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6688 ,  H01L2224/04042 ,  H01L2224/05644 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/16251 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H03F1/0288 ,  H03F1/42 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/0665

Abstract: An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.

Abstract translation: 放大器的实施例具有由低截止频率和上限截止频率定义的带宽。 放大器包括输入阻抗匹配电路和晶体管。 晶体管具有栅极，耦合到放大器的输出的第一电流导通端子和耦合到参考节点的第二导电端子。 输入阻抗匹配电路具有耦合到放大器的输入的滤波器输入，耦合到晶体管的栅极的滤波器输出以及耦合在滤波器输入和滤波器输出之间的多极滤波器。 滤波器的第一极点位于带宽内的第一频率处，并且滤波器的第二极点位于带宽外的第二频率处。 输入阻抗匹配电路被配置为对输入RF信号进行滤波以在滤波器输出处产生经滤波的RF信号。