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公开(公告)号：US09692363B2
公开(公告)日：2017-06-27
申请号：US14919511
申请日：2015-10-21
发明人： Ning Zhu , Damon G. Holmes , Jeffrey K. Jones
CPC分类号： H03F1/565 , H01L23/66 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H03F3/19 , H03F3/195 , H03F2200/108 , H03F2200/181 , H03F2200/216 , H03F2200/222 , H03F2200/225 , H03F2200/297 , H03F2200/301 , H03F2200/309 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/552 , H03F2200/75 , H01L2924/00014
摘要： Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.
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公开(公告)号：US09628027B2
公开(公告)日：2017-04-18
申请号：US14211410
申请日：2014-03-14
CPC分类号： H03F1/0288 , H01L23/645 , H01L23/66 , H01L24/48 , H01L2223/6611 , H01L2224/48227 , H01L2924/19107 , H03F1/0294 , H03F3/195 , H03F3/245 , H03F3/68 , H03F2200/451 , H03F2200/537 , H03F2200/541 , Y10T29/41 , H01L2924/00014 , H01L2224/45099
摘要： The embodiments described herein provide compensation for mutual inductance in a multi-path device. In one embodiment, a device includes a multi-path integrated device. The multi-path integrated device includes a first output and a second output. The first output is configured to be coupled to a first output lead through a first bonding wire, and the second output is configured to be coupled to a second output lead through a second bonding wire. Due to their proximity, the second bonding wire has a first mutual inductance with the first bonding wire. A first compensation network is coupled to the first output, and a second compensation network is coupled to the second output. The second compensation network is configured to have a second mutual inductance with the first compensation network. The second mutual inductance at least partially cancels the effects of the first mutual inductance.
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公开(公告)号：US09673766B1
公开(公告)日：2017-06-06
申请号：US15158405
申请日：2016-05-18
发明人： Jeffrey S. Roberts , Damon G. Holmes , Ning Zhu
CPC分类号： H03F3/2171 , H03F1/0205 , H03F1/565 , H03F3/191 , H03F3/193 , H03F2200/318 , H03F2200/391 , H03F2200/451 , H03F2200/552
摘要： The embodiments described herein provide class F amplifiers and methods of operation. So implemented, the class F amplifiers can be used to provide high efficiency amplification for a variety of applications, including radio frequency (RF) applications. In general, the class F amplifiers are implemented with at least one transistor and an output matching network, where the output matching network includes a plurality of resonant circuits configured to facilitate class F amplifier operation. In addition to facilitating class F amplifier operation, the plurality of resonant circuits can also be implemented with other circuit elements to provide output impedance transformation in a way that facilitates efficient amplifier operation.
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4.发明授权RF power transistors with impedance matching circuits, and methods of manufacture thereof 有权具有阻抗匹配电路的RF功率晶体管及其制造方法公开(公告)号：US09571044B1
公开(公告)日：2017-02-14
申请号：US14919513
申请日：2015-10-21
发明人： Ning Zhu , Damon G. Holmes , Jeffrey K. Jones
CPC分类号： H03F1/565 , H01L23/66 , H01L2223/6655 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/49175 , H03F3/195 , H03F2200/108 , H03F2200/181 , H03F2200/216 , H03F2200/222 , H03F2200/225 , H03F2200/297 , H03F2200/301 , H03F2200/309 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/552 , H03F2200/75 , H01L2924/00014
摘要： Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The second shunt inductance and the shunt capacitor form a series resonant circuit in proximity to a center operating frequency of the amplifier, and an RF cold point node is present between the first and second shunt inductances. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold point node and the ground reference node.
摘要翻译： RF放大器的实施例包括具有控制端子和第一和第二载流端子的晶体管，以及耦合在第一载流端子和接地参考节点之间的分流电路。 分路电路包括第一并联电感，第二并联电感和串联耦合的并联电容器。 第二并联电感和并联电容器在放大器的中心工作频率附近形成串联谐振电路，并且RF冷点节点存在于第一和第二分流电感之间。 RF放大器还包括耦合在RF冷点节点和接地参考节点之间的视频带宽电路。
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5.发明授权Multiple-state, switch-mode power amplifier systems and methods of their operation 有权多状态，开关模式功率放大器系统及其运行方法公开(公告)号：US09369089B2
公开(公告)日：2016-06-14
申请号：US14559898
申请日：2014-12-03
IPC分类号： H03F3/217 , H03F1/02 , H03F3/19 , H03F3/189 , H03F3/21 , H03F3/24 , H03F3/30 , H03F3/60 , H03F3/72
CPC分类号： H03F1/0205 , H03F3/189 , H03F3/19 , H03F3/211 , H03F3/2171 , H03F3/2175 , H03F3/2176 , H03F3/2178 , H03F3/245 , H03F3/30 , H03F3/602 , H03F3/72 , H03F2200/09 , H03F2200/171 , H03F2200/451 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142
摘要： An embodiment of an amplifier includes N (N>1) switch-mode power amplifier (SMPA) branches. Each SMPA branch includes two drive signal inputs and one SMPA branch output. A module coupled to the amplifier samples an input RF signal, and produces combinations of drive signals based on the samples. When an SMPA branch receives a first combination of drive signals, it produces an output signal at one voltage level. Conversely, when the SMPA branch receives a different second combination of drive signals, it produces the output signal at another voltage level. At least two of the SMPA branches produce output signals having different absolute magnitudes. A combiner combines the output signals from all of the SMPA branches to produce a combined output signal that may have, at any given time, one of 2*N+1 quantization states.
摘要翻译： 放大器的一个实施例包括N（N> 1）个开关模式功率放大器（SMPA）分支。 每个SMPA分支包括两个驱动信号输入和一个SMPA分支输出。 耦合到放大器的模块对输入RF信号进行采样，并且基于样本产生驱动信号的组合。 当SMPA分支接收到驱动信号的第一组合时，它产生一个电压电平的输出信号。 相反，当SMPA分支接收到不同的驱动信号的第二组合时，它产生另一个电压电平的输出信号。 至少两个SMPA分支产生具有不同绝对值的输出信号。 组合器组合来自所有SMPA分支的输出信号以产生在任何给定时间可以具有2×N + 1个量化状态之一的组合输出信号。
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6.发明授权公开(公告)号：US09911703B2
公开(公告)日：2018-03-06
申请号：US15331115
申请日：2016-10-21
发明人： Olivier Lembeye , Damon G. Holmes , Ning Zhu
IPC分类号： H03F3/191 , H01L23/66 , H01L23/00 , H01L23/495 , H01L23/522 , H01L23/528 , H03F3/19
CPC分类号： H01L23/66 , H01L23/49562 , H01L23/49589 , H01L23/5227 , H01L23/528 , H01L23/645 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/291 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48106 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48265 , H01L2224/49052 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83805 , H01L2224/8384 , H01L2924/00014 , H01L2924/1304 , H01L2924/1305 , H01L2924/13091 , H01L2924/1421 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H03F1/565 , H03F3/19 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/75 , H03F2203/21103 , H03F2203/21139 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A packaged RF amplifier device includes a transistor and an output circuit. The transistor includes a control terminal and first and second current carrying terminals. The output circuit is coupled between the first current carrying terminal and an output lead. The output circuit includes first and second inductive elements coupled in series. The first inductive element, which may be a first bondwire array or an integrated inductance, is coupled between the first current carrying terminal and a node. The second inductive element, which includes a second bondwire array, is coupled between the node and the output lead. The device also includes a shunt circuit with a shunt capacitor and a third bondwire array coupled between the first current carrying terminal and the shunt capacitor. The first and second inductive elements and the third bondwire array are configured to have a desired mutual inductance.
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7.发明申请公开(公告)号：US20170117239A1
公开(公告)日：2017-04-27
申请号：US15331115
申请日：2016-10-21
发明人： Olivier Lembeye , Damon G. Holmes , Ning Zhu
IPC分类号： H01L23/66 , H03F3/19 , H01L23/522 , H01L23/528 , H01L23/00 , H01L23/495
CPC分类号： H01L23/66 , H01L23/49562 , H01L23/49589 , H01L23/5227 , H01L23/528 , H01L23/645 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/291 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48106 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48265 , H01L2224/49052 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83805 , H01L2224/8384 , H01L2924/00014 , H01L2924/1304 , H01L2924/1305 , H01L2924/13091 , H01L2924/1421 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H03F1/565 , H03F3/19 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/75 , H03F2203/21103 , H03F2203/21139 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A packaged RF amplifier device includes a transistor and an output circuit. The transistor includes a control terminal and first and second current carrying terminals. The output circuit is coupled between the first current carrying terminal and an output lead. The output circuit includes first and second inductive elements coupled in series. The first inductive element, which may be a first bondwire array or an integrated inductance, is coupled between the first current carrying terminal and a node. The second inductive element, which includes a second bondwire array, is coupled between the node and the output lead. The device also includes a shunt circuit with a shunt capacitor and a third bondwire array coupled between the first current carrying terminal and the shunt capacitor. The first and second inductive elements and the third bondwire array are configured to have a desired mutual inductance.
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公开(公告)号：US09013246B2
公开(公告)日：2015-04-21
申请号：US13957075
申请日：2013-08-01
CPC分类号： H03F3/211 , H01P1/184 , H01P5/028 , H01P5/12 , H03F1/56 , H03F3/195 , H03F3/245 , H03F2200/222 , H03F2200/336 , H03F2200/387
摘要： The embodiments described herein can provide improved signal feeding between hybrid couplers and associated transistors. As such, these embodiments can improve the performance of amplifiers and other such RF devices that utilize these components. In one embodiment a device includes a distribution network and a compensation resonator. The distribution network is configured to output a signal through a relatively wide output feedline. This relatively wide output feedline provides distributed signal feeding that can improve signal distribution and performance. The output feedline is coupled to the compensation resonator. In general, the compensation resonator is configured to resonate with the distribution network at the frequency band of the signal. Thus, the distribution network and compensation resonator together can provide improved signal distribution while maintaining performance at the frequencies of interest.
摘要翻译： 本文描述的实施例可以提供混合耦合器和相关联的晶体管之间改进的信号馈送。 因此，这些实施例可以改善利用这些部件的放大器和其他这样的RF器件的性能。 在一个实施例中，装置包括配电网络和补偿谐振器。 分配网络被配置为通过相对宽的输出馈线输出信号。 这种相对较宽的输出馈线提供分布式信号馈送，可以改善信号分配和性能。 输出馈线耦合到补偿谐振器。 通常，补偿谐振器被配置为在信号的频带处与分配网络共振。 因此，分配网络和补偿谐振器可以提供改善的信号分配，同时保持感兴趣的频率的性能。
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