-
1.发明申请公开(公告)号：US20170117239A1
公开(公告)日：2017-04-27
申请号：US15331115
申请日：2016-10-21
发明人： Olivier Lembeye , Damon G. Holmes , Ning Zhu
IPC分类号： H01L23/66 , H03F3/19 , H01L23/522 , H01L23/528 , H01L23/00 , H01L23/495
CPC分类号： H01L23/66 , H01L23/49562 , H01L23/49589 , H01L23/5227 , H01L23/528 , H01L23/645 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/291 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48106 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48265 , H01L2224/49052 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83805 , H01L2224/8384 , H01L2924/00014 , H01L2924/1304 , H01L2924/1305 , H01L2924/13091 , H01L2924/1421 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H03F1/565 , H03F3/19 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/75 , H03F2203/21103 , H03F2203/21139 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A packaged RF amplifier device includes a transistor and an output circuit. The transistor includes a control terminal and first and second current carrying terminals. The output circuit is coupled between the first current carrying terminal and an output lead. The output circuit includes first and second inductive elements coupled in series. The first inductive element, which may be a first bondwire array or an integrated inductance, is coupled between the first current carrying terminal and a node. The second inductive element, which includes a second bondwire array, is coupled between the node and the output lead. The device also includes a shunt circuit with a shunt capacitor and a third bondwire array coupled between the first current carrying terminal and the shunt capacitor. The first and second inductive elements and the third bondwire array are configured to have a desired mutual inductance.
-
公开(公告)号：US09692363B2
公开(公告)日：2017-06-27
申请号：US14919511
申请日：2015-10-21
发明人： Ning Zhu , Damon G. Holmes , Jeffrey K. Jones
CPC分类号： H03F1/565 , H01L23/66 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H03F3/19 , H03F3/195 , H03F2200/108 , H03F2200/181 , H03F2200/216 , H03F2200/222 , H03F2200/225 , H03F2200/297 , H03F2200/301 , H03F2200/309 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/552 , H03F2200/75 , H01L2924/00014
摘要： Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.
-
3.发明授权RF power transistors with impedance matching circuits, and methods of manufacture thereof 有权具有阻抗匹配电路的RF功率晶体管及其制造方法公开(公告)号：US09571044B1
公开(公告)日：2017-02-14
申请号：US14919513
申请日：2015-10-21
发明人： Ning Zhu , Damon G. Holmes , Jeffrey K. Jones
CPC分类号： H03F1/565 , H01L23/66 , H01L2223/6655 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/49175 , H03F3/195 , H03F2200/108 , H03F2200/181 , H03F2200/216 , H03F2200/222 , H03F2200/225 , H03F2200/297 , H03F2200/301 , H03F2200/309 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/552 , H03F2200/75 , H01L2924/00014
摘要： Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The second shunt inductance and the shunt capacitor form a series resonant circuit in proximity to a center operating frequency of the amplifier, and an RF cold point node is present between the first and second shunt inductances. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold point node and the ground reference node.
摘要翻译： RF放大器的实施例包括具有控制端子和第一和第二载流端子的晶体管，以及耦合在第一载流端子和接地参考节点之间的分流电路。 分路电路包括第一并联电感，第二并联电感和串联耦合的并联电容器。 第二并联电感和并联电容器在放大器的中心工作频率附近形成串联谐振电路，并且RF冷点节点存在于第一和第二分流电感之间。 RF放大器还包括耦合在RF冷点节点和接地参考节点之间的视频带宽电路。
-
4.发明授权公开(公告)号：US10432152B2
公开(公告)日：2019-10-01
申请号：US14919990
申请日：2015-10-22
发明人： Michael E. Watts , Jeffrey K. Jones , Ning Zhu , Iouri Volokhine
IPC分类号： H03F1/56 , H03F3/195 , H01G4/30 , H01G4/38 , H01L23/66 , H01F27/28 , H01G4/005 , H01G4/12 , H03F3/213 , H03H7/38 , H05K1/11 , H01L23/00 , H01G4/40
摘要： A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.
-
公开(公告)号：US09673766B1
公开(公告)日：2017-06-06
申请号：US15158405
申请日：2016-05-18
发明人： Jeffrey S. Roberts , Damon G. Holmes , Ning Zhu
CPC分类号： H03F3/2171 , H03F1/0205 , H03F1/565 , H03F3/191 , H03F3/193 , H03F2200/318 , H03F2200/391 , H03F2200/451 , H03F2200/552
摘要： The embodiments described herein provide class F amplifiers and methods of operation. So implemented, the class F amplifiers can be used to provide high efficiency amplification for a variety of applications, including radio frequency (RF) applications. In general, the class F amplifiers are implemented with at least one transistor and an output matching network, where the output matching network includes a plurality of resonant circuits configured to facilitate class F amplifier operation. In addition to facilitating class F amplifier operation, the plurality of resonant circuits can also be implemented with other circuit elements to provide output impedance transformation in a way that facilitates efficient amplifier operation.
-
6.发明授权公开(公告)号：US09911703B2
公开(公告)日：2018-03-06
申请号：US15331115
申请日：2016-10-21
发明人： Olivier Lembeye , Damon G. Holmes , Ning Zhu
IPC分类号： H03F3/191 , H01L23/66 , H01L23/00 , H01L23/495 , H01L23/522 , H01L23/528 , H03F3/19
CPC分类号： H01L23/66 , H01L23/49562 , H01L23/49589 , H01L23/5227 , H01L23/528 , H01L23/645 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2223/6611 , H01L2223/6655 , H01L2223/6672 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/291 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48106 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48265 , H01L2224/49052 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83805 , H01L2224/8384 , H01L2924/00014 , H01L2924/1304 , H01L2924/1305 , H01L2924/13091 , H01L2924/1421 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H03F1/565 , H03F3/19 , H03F3/195 , H03F2200/222 , H03F2200/387 , H03F2200/391 , H03F2200/402 , H03F2200/451 , H03F2200/75 , H03F2203/21103 , H03F2203/21139 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A packaged RF amplifier device includes a transistor and an output circuit. The transistor includes a control terminal and first and second current carrying terminals. The output circuit is coupled between the first current carrying terminal and an output lead. The output circuit includes first and second inductive elements coupled in series. The first inductive element, which may be a first bondwire array or an integrated inductance, is coupled between the first current carrying terminal and a node. The second inductive element, which includes a second bondwire array, is coupled between the node and the output lead. The device also includes a shunt circuit with a shunt capacitor and a third bondwire array coupled between the first current carrying terminal and the shunt capacitor. The first and second inductive elements and the third bondwire array are configured to have a desired mutual inductance.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.014 秒)
