-
公开(公告)号：US09646958B2
公开(公告)日：2017-05-09
申请号：US12726309
申请日：2010-03-17
IPC分类号： H01L29/06 , H01L27/02 , H01L27/092 , H01L27/105
CPC分类号： H01L27/0207 , H01L27/092 , H01L27/105 , H01L2224/16225
摘要： An integrated circuit includes a core area. The core area has at least one edge region and a plurality of transistors disposed in the edge region. A plurality of dummy structures are disposed outside the core area and adjacent to the at least one edge region. Each channel of the transistors in a channel width direction faces at least one of the dummy structures.
-
公开(公告)号：US08525267B2
公开(公告)日：2013-09-03
申请号：US12953148
申请日：2010-11-23
IPC分类号： H01L29/66
CPC分类号： H01L21/823431 , H01L21/845 , H01L27/1211
摘要： A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.
摘要翻译： 半导体FinFET器件包括沿第一方向形成的多个栅极线和两种类型的鳍结构。 在第二方向上形成第一类型的翅片结构，以及垂直于第一类型翅片结构形成的第二类型的翅片结构。 接触孔耦合到第二类型的翅片结构中的一个或多个。
-
3.发明授权公开(公告)号：US08486769B2
公开(公告)日：2013-07-16
申请号：US12949881
申请日：2010-11-19
IPC分类号： H01L29/66
CPC分类号： H01L21/845 , H01L21/823431
摘要： A method for forming a plurality of fins on a semiconductor substrate includes depositing a spacer layer to fill in gaps between the plurality of fins, the fins comprising a first material and the spacer layer comprising a second material. A first area is defined where the fins need to be broadened and a second area is defined where the fins do not need to be broadened. The method also includes patterning the spacer layer to remove spacers in the first area where the fins need to be broadened and applying an epitaxy process at a predetermined rate to grow a layer of the first material on fins in the first area. The spacer layer is removed in the second area where the fins do not need broadening.
摘要翻译： 在半导体衬底上形成多个散热片的方法包括沉积间隔层以填充多个散热片之间的间隙，散热片包括第一材料，间隔层包括第二材料。 限定翅片需要扩大的第一区域，并且限定翅片不需要扩大的第二区域。 该方法还包括图案化间隔层以去除第一区域中的间隔物，其中翅片需要变宽，并以预定的速率施加外延过程，以在第一区域的翅片上生长第一材料的层。 在翅片不需要加宽的第二区域中移除间隔层。
-
4.发明申请公开(公告)号：US20120126375A1
公开(公告)日：2012-05-24
申请号：US12949881
申请日：2010-11-19
CPC分类号： H01L21/845 , H01L21/823431
摘要： A method for forming a plurality of fins on a semiconductor substrate includes depositing a spacer layer to fill in gaps between the plurality of fins, the fins comprising a first material and the spacer layer comprising a second material. A first area is defined where the fins need to be broadened and a second area is defined where the fins do not need to be broadened. The method also includes patterning the spacer layer to remove spacers in the first area where the fins need to be broadened and applying an epitaxy process at a predetermined rate to grow a layer of the first material on fins in the first area. The spacer layer is removed in the second area where the fins do not need broadening.
摘要翻译： 在半导体衬底上形成多个散热片的方法包括沉积间隔层以填充多个散热片之间的间隙，散热片包括第一材料，间隔层包括第二材料。 限定翅片需要扩大的第一区域，并且限定翅片不需要扩大的第二区域。 该方法还包括图案化间隔层以去除第一区域中的间隔物，其中翅片需要变宽，并以预定的速率施加外延过程，以在第一区域的翅片上生长第一材料的层。 在翅片不需要加宽的第二区域中移除间隔层。
-
公开(公告)号：US20120126326A1
公开(公告)日：2012-05-24
申请号：US12953148
申请日：2010-11-23
IPC分类号： H01L27/088
CPC分类号： H01L21/823431 , H01L21/845 , H01L27/1211
摘要： A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.
摘要翻译： 半导体FinFET器件包括沿第一方向形成的多个栅极线和两种类型的鳍结构。 在第二方向上形成第一类型的翅片结构，以及垂直于第一类型翅片结构形成的第二类型的翅片结构。 接触孔耦合到第二类型的翅片结构中的一个或多个。
-
6.发明授权公开(公告)号：US08769446B2
公开(公告)日：2014-07-01
申请号：US13227809
申请日：2011-09-08
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G03F1/00 , G06F17/5068 , H01L29/66795
摘要： A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. A plurality of elongate mandrels is defined in a plurality of active regions. Where adjacent active regions are partially-parallel and within a specified minimum spacing, connective elements are added to a portion of the space between the adjacent active regions to connect the mandrel ends from one active region to another active region.
摘要翻译： 公开了一种用于从具有平面晶体管的器件的第一布局生成具有FinFET的器件的布局的方法。 多个细长心轴被限定在多个有源区域中。 在相邻有源区域部分平行并且在规定的最小间隔内，连接元件被添加到相邻有源区域之间的空间的一部分，以将心轴端部从一个有源区域连接到另一个有源区域。
-
公开(公告)号：US20120126325A1
公开(公告)日：2012-05-24
申请号：US12952376
申请日：2010-11-23
申请人： Chien-Hsun Wang , Chih-Sheng Chang , Yi-Tang Lin
发明人： Chien-Hsun Wang , Chih-Sheng Chang , Yi-Tang Lin
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/1211 , H01L21/823431 , H01L21/845
摘要： A method includes growing a plurality of parallel mandrels on a surface of a semiconductor substrate, each mandrel having at least two laterally opposite sidewalls and a predetermined width. The method further includes forming a first type of spacers on the sidewalls of the mandrels, wherein the first type of spacers between two adjacent mandrels are separated by a gap. The predetermined mandrel width is adjusted to close the gap between the adjacent first type of spacers to form a second type of spacers. The mandrels are removed to form a first type of fins from the first type of spacers, and to form a second type of fins from spacers between two adjacent mandrels. The second type of fins are wider than the first type of fins.
摘要翻译： 一种方法包括在半导体衬底的表面上生长多个平行心轴，每个心轴具有至少两个横向相对的侧壁和预定宽度。 该方法还包括在心轴的侧壁上形成第一类型的间隔物，其中两个相邻心轴之间的第一类型的间隔物被间隙分开。 调整预定的心轴宽度以封闭相邻的第一类型间隔件之间的间隙，以形成第二类型的间隔件。 去除心轴以形成第一类型的间隔件的第一类型的翅片，并且在两个相邻的心轴之间从间隔件形成第二类型的翅片。 翅片的第二种类型比第一种翅片宽。
-
公开(公告)号：US08633076B2
公开(公告)日：2014-01-21
申请号：US12952376
申请日：2010-11-23
申请人： Chien-Hsun Wang , Chih-Sheng Chang , Yi-Tang Lin
发明人： Chien-Hsun Wang , Chih-Sheng Chang , Yi-Tang Lin
IPC分类号： H01L21/336
CPC分类号： H01L27/1211 , H01L21/823431 , H01L21/845
摘要： A method includes growing a plurality of parallel mandrels on a surface of a semiconductor substrate, each mandrel having at least two laterally opposite sidewalls and a predetermined width. The method further includes forming a first type of spacers on the sidewalls of the mandrels, wherein the first type of spacers between two adjacent mandrels are separated by a gap. The predetermined mandrel width is adjusted to close the gap between the adjacent first type of spacers to form a second type of spacers. The mandrels are removed to form a first type of fins from the first type of spacers, and to form a second type of fins from spacers between two adjacent mandrels. The second type of fins are wider than the first type of fins.
摘要翻译： 一种方法包括在半导体衬底的表面上生长多个平行心轴，每个心轴具有至少两个横向相对的侧壁和预定宽度。 该方法还包括在心轴的侧壁上形成第一类型的间隔物，其中两个相邻心轴之间的第一类型的间隔物被间隙分开。 调整预定的心轴宽度以封闭相邻的第一类型间隔件之间的间隙，以形成第二类型的间隔件。 去除心轴以形成第一类型的间隔件的第一类型的翅片，并且在两个相邻的心轴之间从间隔件形成第二类型的翅片。 翅片的第二种类型比第一种翅片宽。
-
公开(公告)号：US09245805B2
公开(公告)日：2016-01-26
申请号：US12831903
申请日：2010-07-07
IPC分类号： H01L21/70 , H01L27/088 , H01L29/78 , H01L29/20 , H01L21/02 , H01L29/06 , H01L21/8238 , H01L29/66
CPC分类号： H01L21/8256 , H01L21/02532 , H01L21/02535 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L29/0847 , H01L29/6681 , H01L29/7848
摘要： An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first gate dielectric. The p-type FinFET includes a second germanium fin over the substrate; a second gate dielectric on a top surface and sidewalls of the second germanium fin; and a second gate electrode on the second gate dielectric. The first gate electrode and the second gate electrode are formed of a same material having a work function close to an intrinsic energy level of germanium.
摘要翻译： 集成电路结构包括n型鳍式场效应晶体管（FinFET）和p型FinFET。 n型FinFET包括在衬底上的第一锗鳍; 顶表面上的第一栅电介质和第一锗鳍的侧壁; 以及在第一栅极电介质上的第一栅电极。 p型FinFET在衬底上包括第二个锗鳍; 在顶表面上的第二栅电介质和第二锗鳍的侧壁; 和在第二栅极电介质上的第二栅电极。 第一栅电极和第二栅极由具有接近锗的固有能级的功函数的相同材料形成。
-
公开(公告)号：US09035426B2
公开(公告)日：2015-05-19
申请号：US13339160
申请日：2011-12-28
申请人： Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
发明人： Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
IPC分类号： H01L29/70 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/735
CPC分类号： H01L29/6625 , H01L21/02532 , H01L21/311 , H01L29/0649 , H01L29/0692 , H01L29/0804 , H01L29/0808 , H01L29/0821 , H01L29/1004 , H01L29/41708 , H01L29/735
摘要： A bipolar junction transistor (BJT) formed using a fin field-effect transistor (FinFET) complimentary metal-oxide-semiconductor (CMOS) process flow is provided. The BJT includes an emitter fin, a base fin, and a collector fin formed on a substrate. The base fin encloses the emitter fin and collector fin encloses the emitter fin. In some embodiments, the emitter fin, base fin, and collector fin have a square shape when viewed from above and are concentric with each other.
摘要翻译： 提供了使用鳍状场效应晶体管（FinFET）互补金属氧化物半导体（CMOS）工艺流程形成的双极结型晶体管（BJT）。 BJT包括在基板上形成的发射极翅片，基极翅片和集电极翅片。 发射极散热片和收集器散热片包围发射极翅片。 在一些实施例中，当从上方观察并且彼此同心时，发射器翅片，底部翅片和收集器翅片具有正方形形状。
-
-
-
-
-
-
-
-
-
搜索结果
74 条记录 (耗时 0.024 秒)
