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公开(公告)号：US08525267B2
公开(公告)日：2013-09-03
申请号：US12953148
申请日：2010-11-23
IPC分类号： H01L29/66
CPC分类号： H01L21/823431 , H01L21/845 , H01L27/1211
摘要： A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.
摘要翻译： 半导体FinFET器件包括沿第一方向形成的多个栅极线和两种类型的鳍结构。 在第二方向上形成第一类型的翅片结构，以及垂直于第一类型翅片结构形成的第二类型的翅片结构。 接触孔耦合到第二类型的翅片结构中的一个或多个。
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2.发明授权公开(公告)号：US08486769B2
公开(公告)日：2013-07-16
申请号：US12949881
申请日：2010-11-19
IPC分类号： H01L29/66
CPC分类号： H01L21/845 , H01L21/823431
摘要： A method for forming a plurality of fins on a semiconductor substrate includes depositing a spacer layer to fill in gaps between the plurality of fins, the fins comprising a first material and the spacer layer comprising a second material. A first area is defined where the fins need to be broadened and a second area is defined where the fins do not need to be broadened. The method also includes patterning the spacer layer to remove spacers in the first area where the fins need to be broadened and applying an epitaxy process at a predetermined rate to grow a layer of the first material on fins in the first area. The spacer layer is removed in the second area where the fins do not need broadening.
摘要翻译： 在半导体衬底上形成多个散热片的方法包括沉积间隔层以填充多个散热片之间的间隙，散热片包括第一材料，间隔层包括第二材料。 限定翅片需要扩大的第一区域，并且限定翅片不需要扩大的第二区域。 该方法还包括图案化间隔层以去除第一区域中的间隔物，其中翅片需要变宽，并以预定的速率施加外延过程，以在第一区域的翅片上生长第一材料的层。 在翅片不需要加宽的第二区域中移除间隔层。
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3.发明申请公开(公告)号：US20120126375A1
公开(公告)日：2012-05-24
申请号：US12949881
申请日：2010-11-19
CPC分类号： H01L21/845 , H01L21/823431
摘要： A method for forming a plurality of fins on a semiconductor substrate includes depositing a spacer layer to fill in gaps between the plurality of fins, the fins comprising a first material and the spacer layer comprising a second material. A first area is defined where the fins need to be broadened and a second area is defined where the fins do not need to be broadened. The method also includes patterning the spacer layer to remove spacers in the first area where the fins need to be broadened and applying an epitaxy process at a predetermined rate to grow a layer of the first material on fins in the first area. The spacer layer is removed in the second area where the fins do not need broadening.
摘要翻译： 在半导体衬底上形成多个散热片的方法包括沉积间隔层以填充多个散热片之间的间隙，散热片包括第一材料，间隔层包括第二材料。 限定翅片需要扩大的第一区域，并且限定翅片不需要扩大的第二区域。 该方法还包括图案化间隔层以去除第一区域中的间隔物，其中翅片需要变宽，并以预定的速率施加外延过程，以在第一区域的翅片上生长第一材料的层。 在翅片不需要加宽的第二区域中移除间隔层。
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公开(公告)号：US20120126326A1
公开(公告)日：2012-05-24
申请号：US12953148
申请日：2010-11-23
IPC分类号： H01L27/088
CPC分类号： H01L21/823431 , H01L21/845 , H01L27/1211
摘要： A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.
摘要翻译： 半导体FinFET器件包括沿第一方向形成的多个栅极线和两种类型的鳍结构。 在第二方向上形成第一类型的翅片结构，以及垂直于第一类型翅片结构形成的第二类型的翅片结构。 接触孔耦合到第二类型的翅片结构中的一个或多个。
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5.发明授权公开(公告)号：US08769446B2
公开(公告)日：2014-07-01
申请号：US13227809
申请日：2011-09-08
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G03F1/00 , G06F17/5068 , H01L29/66795
摘要： A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. A plurality of elongate mandrels is defined in a plurality of active regions. Where adjacent active regions are partially-parallel and within a specified minimum spacing, connective elements are added to a portion of the space between the adjacent active regions to connect the mandrel ends from one active region to another active region.
摘要翻译： 公开了一种用于从具有平面晶体管的器件的第一布局生成具有FinFET的器件的布局的方法。 多个细长心轴被限定在多个有源区域中。 在相邻有源区域部分平行并且在规定的最小间隔内，连接元件被添加到相邻有源区域之间的空间的一部分，以将心轴端部从一个有源区域连接到另一个有源区域。
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公开(公告)号：US08799833B2
公开(公告)日：2014-08-05
申请号：US13416907
申请日：2012-03-09
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. The planar layout is analyzed and corresponding FinFET structures are generated in a matching fashion. The resulting FinFET structures are then optimized. Dummy patterns and a new metal layer may be generated before the FinFET layout is verified and outputted.
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公开(公告)号：US09035426B2
公开(公告)日：2015-05-19
申请号：US13339160
申请日：2011-12-28
申请人： Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
发明人： Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
IPC分类号： H01L29/70 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/735
CPC分类号： H01L29/6625 , H01L21/02532 , H01L21/311 , H01L29/0649 , H01L29/0692 , H01L29/0804 , H01L29/0808 , H01L29/0821 , H01L29/1004 , H01L29/41708 , H01L29/735
摘要： A bipolar junction transistor (BJT) formed using a fin field-effect transistor (FinFET) complimentary metal-oxide-semiconductor (CMOS) process flow is provided. The BJT includes an emitter fin, a base fin, and a collector fin formed on a substrate. The base fin encloses the emitter fin and collector fin encloses the emitter fin. In some embodiments, the emitter fin, base fin, and collector fin have a square shape when viewed from above and are concentric with each other.
摘要翻译： 提供了使用鳍状场效应晶体管（FinFET）互补金属氧化物半导体（CMOS）工艺流程形成的双极结型晶体管（BJT）。 BJT包括在基板上形成的发射极翅片，基极翅片和集电极翅片。 发射极散热片和收集器散热片包围发射极翅片。 在一些实施例中，当从上方观察并且彼此同心时，发射器翅片，底部翅片和收集器翅片具有正方形形状。
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公开(公告)号：US20130168819A1
公开(公告)日：2013-07-04
申请号：US13339160
申请日：2011-12-28
申请人： Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
发明人： Chih-Sheng Chang , Yi-Tang Lin , Ming-Feng Shieh
IPC分类号： H01L29/70 , H01L21/331
CPC分类号： H01L29/6625 , H01L21/02532 , H01L21/311 , H01L29/0649 , H01L29/0692 , H01L29/0804 , H01L29/0808 , H01L29/0821 , H01L29/1004 , H01L29/41708 , H01L29/735
摘要： A bipolar junction transistor (BJT) formed using a fin field-effect transistor (FinFET) complimentary metal-oxide-semiconductor (CMOS) process flow is provided. The BJT includes an emitter fin, a base fin, and a collector fin formed on a substrate. The base fin encloses the emitter fin and collector fin encloses the emitter fin. In some embodiments, the emitter fin, base fin, and collector fin have a square shape when viewed from above and are concentric with each other.
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9.发明申请MANDREL MODIFICATION FOR ACHIEVING SINGLE FIN FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE 有权用于实现单FIN FIN效果场效应晶体管（FINFET）器件的MANDREL修改公开(公告)号：US20130174103A1
公开(公告)日：2013-07-04
申请号：US13339646
申请日：2011-12-29
申请人： Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
发明人： Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
IPC分类号： G06F17/50
CPC分类号： H01L21/823431 , G03F1/38 , G03F1/70 , G03F7/70425 , G03F7/70466 , H01L21/845
摘要： Methods for forming a single fin fin-like field effect transistor (FinFET) device are disclosed. An exemplary method includes providing a main mask layout and a trim mask layout to form fins of a fin-like field effect transistor (FinFET) device, wherein the main mask layout includes a first masking feature and the trim mask layout includes a second masking feature that defines at least two fins, the first masking feature and the second masking feature having a spatial relationship; and modifying the main mask layout based on the spatial relationship between the first masking feature and the second masking feature, wherein the modifying the main mask layout includes modifying the first masking feature such that a single fin FinFET device is formed using the modified main mask layout and the trim mask layout.
摘要翻译： 公开了形成单个翅片状场效应晶体管（FinFET）器件的方法。 一种示例性方法包括提供主掩模布局和修剪掩模布局以形成鳍状场效应晶体管（FinFET）器件的鳍，其中主掩模布局包括第一掩蔽特征，并且修剪蒙版布局包括第二掩蔽特征 其限定至少两个鳍，所述第一掩蔽特征和所述第二掩蔽特征具有空间关系; 以及基于所述第一掩蔽特征和所述第二掩蔽特征之间的空间关系来修改所述主掩模布局，其中所述修改所述主掩模布局包括修改所述第一掩蔽特征，使得使用所述修改的主掩模布局形成单鳍FinFET器件 和修剪蒙版布局。
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10.发明授权Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device 有权用于实现单鳍鳍状场效应晶体管（FinFET）器件的芯棒修改公开(公告)号：US08881066B2
公开(公告)日：2014-11-04
申请号：US13339646
申请日：2011-12-29
申请人： Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
发明人： Ming-Feng Shieh , Yi-Tang Lin , Chia-Cheng Ho , Chih-Sheng Chang
IPC分类号： G06F17/50
CPC分类号： H01L21/823431 , G03F1/38 , G03F1/70 , G03F7/70425 , G03F7/70466 , H01L21/845
摘要： Methods for forming a single fin fin-like field effect transistor (FinFET) device are disclosed. An exemplary method includes providing a main mask layout and a trim mask layout to form fins of a fin-like field effect transistor (FinFET) device, wherein the main mask layout includes a first masking feature and the trim mask layout includes a second masking feature that defines at least two fins, the first masking feature and the second masking feature having a spatial relationship; and modifying the main mask layout based on the spatial relationship between the first masking feature and the second masking feature, wherein the modifying the main mask layout includes modifying the first masking feature such that a single fin FinFET device is formed using the modified main mask layout and the trim mask layout.
摘要翻译： 公开了形成单个翅片状场效应晶体管（FinFET）器件的方法。 一种示例性方法包括提供主掩模布局和修剪掩模布局以形成鳍状场效应晶体管（FinFET）器件的鳍，其中主掩模布局包括第一掩蔽特征，并且修剪蒙版布局包括第二掩蔽特征 其限定至少两个鳍，所述第一掩蔽特征和所述第二掩蔽特征具有空间关系; 以及基于所述第一掩蔽特征和所述第二掩蔽特征之间的空间关系来修改所述主掩模布局，其中所述修改所述主掩模布局包括修改所述第一掩蔽特征，使得使用所述修改的主掩模布局形成单鳍FinFET器件 和修剪蒙版布局。
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