公开(公告)号：US20160049312A1

公开(公告)日：2016-02-18

申请号：US14693873

申请日：2015-04-23

Applicant: SUNGHO KANG ,  Sunyoung LEE ,  Jaehee LEE ,  HAN KI LEE ,  GEUNKYU CHOI

Inventor： SUNGHO KANG ,  Sunyoung LEE ,  Jaehee LEE ,  HAN KI LEE ,  GEUNKYU CHOI

IPC: H01L21/324 ,  H01L21/285 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01J37/32192 ,  H01J37/3244 ,  H01J37/32853 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/0262 ,  H01L21/302 ,  H01L21/31058 ,  H01L21/324 ,  H01L21/3247

Abstract: A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

Abstract translation: 基板处理方法可以通过等离子体处理装置进行。 基板处理方法可以包括：在处理室的内部空间的下部的平台上提供基板; 将第一工艺气体从形成在处理室的内壁处的第一喷嘴向上引导到内部空间的上部，第一处理气体是惰性气体，并且其中第一喷嘴是倾斜向上取向的喷嘴，其被构造成 将第一工艺气体向上引导; 将第二工艺气体从形成在所述处理室的内壁处的第二喷嘴向下引导到所述内部空间的下部，所述第二工艺气体是氢气，并且其中所述第二喷嘴是倾斜向下定向的喷嘴， 第二工序向下气; 以及将微波施加到所述内部空间的上部以将所述第一处理气体和所述第二处理气体激发成等离子体，然后处理所述基板。

公开(公告)号：US20160225586A1

公开(公告)日：2016-08-04

申请号：US15095338

申请日：2016-04-11

Applicant: SUNGHO KANG ,  Sunyoung LEE ,  Jaehee LEE ,  HAN KI LEE ,  GEUNKYU CHOI

Inventor： SUNGHO KANG ,  Sunyoung LEE ,  Jaehee LEE ,  HAN KI LEE ,  GEUNKYU CHOI

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/3244 ,  H01J37/32853 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/0262 ,  H01L21/302 ,  H01L21/31058 ,  H01L21/324 ,  H01L21/3247

Abstract: A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

公开(公告)号：US20110250734A1

公开(公告)日：2011-10-13

申请号：US13083985

申请日：2011-04-11

Applicant: Seungho CHOI ,  Gwangseon Byun ,  Sunyoung Lee ,  Kyungwoo Lee ,  Eungoo Lee ,  Hongshik Kim

Inventor： Seungho CHOI ,  Gwangseon Byun ,  Sunyoung Lee ,  Kyungwoo Lee ,  Eungoo Lee ,  Hongshik Kim

IPC: H01L21/02

CPC classification number: G01N1/286 ,  G01N2001/2886

Abstract: An apparatus and a method of processing a specimen includes a final analysis specimen that is manufactured by sequentially performing specimen processing processes using a laser beam with respect to an initial laminate specimen loaded on a stage. As a result, the final specimen manufacturing time may be reduced and the quality of the final specimen may be improved.

Abstract translation: 一种处理试样的装置和方法包括：最终分析试样，其通过使用激光束依次进行加载在载物台上的初始层叠试样的试样处理工序而制造。 结果，可以减少最终的样品制造时间，并且可以提高最终样品的质量。

公开(公告)号：US20100055016A1

公开(公告)日：2010-03-04

申请号：US12531782

申请日：2008-02-01

Applicant: Sang-Hyeob Kim ,  Hye-Jin Myoung ,  Sung-Lyul Maeng ,  G.A.J. Amaratunga ,  Sunyoung Lee

Inventor： Sang-Hyeob Kim ,  Hye-Jin Myoung ,  Sung-Lyul Maeng ,  G.A.J. Amaratunga ,  Sunyoung Lee

IPC: C01G9/02 ,  C01B13/32 ,  C01G25/02 ,  C01G27/02 ,  C01G23/04 ,  C01G37/02 ,  C01G45/02 ,  C01G47/00 ,  C01G99/00 ,  C01G49/02 ,  C01G53/00 ,  C01G51/04 ,  C01G3/02 ,  C01G5/00 ,  C01G7/00 ,  C01F17/00 ,  C01G33/00 ,  C01G35/00 ,  C01G41/02 ,  C01G39/02 ,  C01G13/02 ,  C01G11/00 ,  C01G56/00 ,  C01B15/14 ,  C01G19/02 ,  C01G17/00 ,  C01G28/00 ,  C01G29/00 ,  C01G30/00 ,  C01G15/00

CPC classification number: C01G1/02 ,  B82Y30/00 ,  C01B13/36 ,  C01G9/02 ,  C01P2004/03 ,  C01P2004/10 ,  C01P2004/16 ,  C01P2004/64

Abstract: Provided is a method of manufacturing oxide-based nano-structured materials using a chemical wet process, and thus, the method can be employed to manufacture oxide-based nano-structured materials having uniform composition and good electrical characteristics in large quantities, the method having a relatively simple process which does not use large growing equipment. The method includes preparing a first organic solution that comprises a metal, mixing the first organic solution with a second organic solution that contains hydroxyl radicals (—OH), filtering the mixed solution using a filter in order to extract oxide-based nano-structured materials formed in the mixed solution, drying the extracted oxide-based nano-structured materials to remove any remaining organic solution, and heat treating the dried oxide-based nano-structured materials.

Abstract translation: 提供了使用化学湿法制造基于氧化物的纳米结构材料的方法，因此该方法可用于大量制备具有均匀组成和良好电特性的氧化物基纳米结构材料，该方法具有 一个相对简单的过程，不使用大型生长设备。 该方法包括制备包含金属的第一有机溶液，将第一有机溶液与含有羟基（-OH）的第二有机溶液混合，使用过滤器过滤混合溶液以提取基于氧化物的纳米结构材料 在混合溶液中形成，干燥提取的氧化物基纳米结构材料以除去任何剩余的有机溶液，并热处理干燥的氧化物基纳米结构材料。

公开(公告)号：US20080096089A1

公开(公告)日：2008-04-24

申请号：US11722781

申请日：2005-12-23

Applicant: Hee-Chan Kim ,  Taek Dong Chung ,  Sejin Park ,  Hankil Boo ,  Sunyoung Lee

Inventor： Hee-Chan Kim ,  Taek Dong Chung ,  Sejin Park ,  Hankil Boo ,  Sunyoung Lee

IPC: H01M4/02 ,  H01M4/04

CPC classification number: C25D7/00 ,  C23C18/08 ,  C25D3/52

Abstract: A method for the fabrication of a mesoporous metal electrode in a non-liquid crystalline phase was tested. Specifically, there was tested the efficacy of the method for the fabrication of a mesoporous metal electrode which comprises forming the mesoporous metal electrode on a substrate by chemical or electrochemical reduction of a mixture comprising a solvent, a structure-directing agent, and a source of a metal, characterized in that the mixture is maintained in a non-liquid crystal phase. Furthermore, the usefulness of the mesoporous metal electrode thus prepared from the non-liquid crystalline phase was also tested. The mesoporous metal electrode prepared from the non-liquid crystalline phase had a large surface area, and a roughness factor thereof was controlled by charges passed during electroplating. The method made it possible to fabricate the mesoporous metal electrode in the non-liquid crystalline phase, even more flexible than a liquid crystalline phase. The mesoporous metal electrode prepared by the method had randomly distributed mesopores on the surface thereof and retained a large roughness factor. The method was found to be a good alternative to the conventional fabrication of porous platinum films in the liquid crystalline phase. Furthermore, the method was found to be suitably applicable to automatic processes, because the mesoporous metal electrode was prepared in the highly flexible non-liquid crystalline phase. Recovery and recycling of raw materials were also improved. The mesoporous metal electrode prepared by the method can be suitably used for the detection of glucose and proton, and as a cathode or an anode of fuel cells.

Abstract translation: 测试了在非液晶相中制造介孔金属电极的方法。 具体地说，已经测试了制造介孔金属电极的方法的功效，其包括通过化学或电化学还原包含溶剂，结构导向剂和源的混合物的混合物在基底上形成中孔金属电极 金属，其特征在于将该混合物保持在非液晶相。 此外，还测试了由非液晶相制备的介孔金属电极的有用性。 由非液晶相制备的介孔金属电极具有大的表面积，并且通过电镀期间的电荷控制其粗糙度因子。 该方法使得可以在非液晶相中制造中孔金属电极，甚至比液晶相更柔韧。 通过该方法制备的介孔金属电极在其表面上随机分布中孔，并保持较大的粗糙度因子。 发现该方法是常规制备液晶相中多孔铂膜的良好替代方法。 此外，发现该方法适用于自动工艺，因为中孔金属电极是在高度柔性的非液晶相中制备的。 原材料的回收利用也得到了改善。 通过该方法制备的介孔金属电极可以适用于检测葡萄糖和质子，以及作为燃料电池的阴极或阳极。

公开(公告)号：US11737350B2

公开(公告)日：2023-08-22

申请号：US17103498

申请日：2020-11-24

Applicant: Jiyoun Lee ,  Yoonhyun Kwak ,  Bumwoo Park ,  Sunyoung Lee ,  Jungin Lee ,  Youngjae Park

Inventor： Jiyoun Lee ,  Yoonhyun Kwak ,  Bumwoo Park ,  Sunyoung Lee ,  Jungin Lee ,  Youngjae Park

IPC: H01L51/00 ,  H10K85/30 ,  C07F15/00 ,  C09K11/06 ,  H10K50/11 ,  H10K101/10

CPC classification number: H10K85/346 ,  C07F15/0093 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1044 ,  C09K2211/185 ,  H10K50/11 ,  H10K2101/10

Abstract: An organometallic compound represented by Formula 1:

M(L1)(L2)  Formula 1

wherein in Formula 1, M, L1, and L2 are the same as described in the specificaiton.

公开(公告)号：US09311275B2

公开(公告)日：2016-04-12

申请号：US13496711

申请日：2010-07-09

Applicant: Euee S Jang ,  Kiho Choi ,  Sunyoung Lee ,  Sikyoung Kim

Inventor： Euee S Jang ,  Kiho Choi ,  Sunyoung Lee ,  Sikyoung Kim

IPC: G06F17/14 ,  H04N19/625

CPC classification number: G06F17/147 ,  H04N19/625

Abstract: Discrete cosine transform/inverse discrete cosine transform method and device are provided. The discrete cosine transform/inverse discrete cosine transform method includes: generating a table index for only an input value other than 0 (zero) out of input values of coordinates in an input block; reading one or more partial values corresponding to the table index out of a plurality of table information pieces which are generated and stored in advance so as to include partial values corresponding to a multiplication of a weight value and an index; and adding the read partial value and calculating the resultant value of each coordinate in an output block. Accordingly, it is possible to perform a fast DCT/IDCT operation and to reduce the energy consumption for the transform.

Abstract translation: 提供离散余弦变换/逆离散余弦变换方法和装置。 离散余弦变换/逆离散余弦变换方法包括：仅在输入块中的坐标的输入值之外生成除了0（零）之外的输入值的表索引; 从预先生成和存储的多个表信息中读出与表索引相对应的一个或多个部分值，以便包括对应于权重值和索引的乘法的部分值; 并添加读取的部分值并计算输出块中每个坐标的结果值。 因此，可以执行快速DCT / IDCT操作并且减少变换的能量消耗。

公开(公告)号：US20150147861A1

公开(公告)日：2015-05-28

申请号：US14543820

申请日：2014-11-17

Applicant: JAEYOUNG PARK ,  SUNGHO KANG ,  KICHUL KIM ,  Sunyoung LEE ,  HAN KI LEE ,  BONYOUNG KOO

Inventor： JAEYOUNG PARK ,  SUNGHO KANG ,  KICHUL KIM ,  Sunyoung LEE ,  HAN KI LEE ,  BONYOUNG KOO

IPC: H01L21/3065 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/0206 ,  H01L21/302 ,  H01L21/306 ,  H01L21/32053 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/34 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

Abstract translation: 一种制造半导体器件的方法包括在衬底中形成第一多个凹陷区域，所述衬底在所述第一多个凹陷区域之间具有突出的有源区域和所述突出的有源区域具有上表面和侧壁，形成器件隔离 在所述第一多个凹陷区域中的膜，所述器件隔离膜暴露所述突出的有源区的所述上表面和所述侧壁的上部，并且对所述突出的有源区的所述暴露表面进行第一等离子体处理，其中所述等离子体处理 使用包含惰性气体和氢气中的至少一种的等离子体气体在小于或等于约700℃的温度下进行。

公开(公告)号：US20210083207A1

公开(公告)日：2021-03-18

申请号：US17103498

申请日：2020-11-24

Applicant: Jiyoun LEE ,  Yoonhyun KWAK ,  Bumwoo PARK ,  Sunyoung LEE ,  Jungin LEE ,  Youngjae PARK

Inventor： Jiyoun LEE ,  Yoonhyun KWAK ,  Bumwoo PARK ,  Sunyoung LEE ,  Jungin LEE ,  Youngjae PARK

IPC: H01L51/00 ,  C07F15/00 ,  C09K11/06

Abstract: An organometallic compound represented by Formula 1: M(L1)(L2)  Formula 1 wherein in Formula 1, M, L1, and L2 are the same as described in the specificaiton.

公开(公告)号：US20160284837A1

公开(公告)日：2016-09-29

申请号：US14978155

申请日：2015-12-22

Applicant: Jinbum Kim ,  Kwanheum Lee ,  Hyunjae Kang ,  Bonyoung Koo ,  Seokhoon Kim ,  Kanghun Moon ,  Jaeyoung Park ,  Byeongchan Lee ,  Sunyoung Lee ,  Choeun Lee ,  Hanki Lee ,  Sujin Jung ,  Yang Xu

Inventor： Jinbum Kim ,  Kwanheum Lee ,  Hyunjae Kang ,  Bonyoung Koo ,  Seokhoon Kim ,  Kanghun Moon ,  Jaeyoung Park ,  Byeongchan Lee ,  Sunyoung Lee ,  Choeun Lee ,  Hanki Lee ,  Sujin Jung ,  Yang Xu

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/42364 ,  H01L29/66795 ,  H01L29/7848

Abstract: A semiconductor device may include a fin active region including a lower fin region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalk of the trench have inclined {111} planes.

Abstract translation: 半导体器件可以包括翅片有源区，包括由器件隔离层围绕的下鳍区域和从器件隔离层的顶表面突出的上翅片有源区，设置在上翅片的顶表面和侧表面上的栅极图案 有源区，以及形成在位于栅极图案侧的鳍状物活性区域中的源极/漏极区域。 栅极图案延伸到器件隔离区域上。 源极/漏极区域包括填充沟槽的沟槽和外延层。 沟槽的侧壁包括将第一侧壁连接到沟槽的底表面的第一侧壁和第二侧壁。 沟槽的底表面位于比栅极图案下方的器件隔离层的顶表面更低的水平处，并且沟槽的第二人行道具有倾斜的{111}平面。