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    Processing method and apparatus using focused energy beam
    1.
    发明授权
    Processing method and apparatus using focused energy beam 失效
    使用聚焦能量束的加工方法和装置

    公开(公告)号：US5683547A

    公开(公告)日：1997-11-04

    申请号：US273780

    申请日：1994-07-12

    Applicant: Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

    Inventor： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

    IPC: H01J37/305 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/30

    CPC classification number: H01L21/76892 ,  H01J37/3056 ,  H01L21/32136 ,  H01L21/76879 ,  H01J2237/006 ,  H01J2237/31744

    Abstract: A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.

    Abstract translation: 一种处理方法和装置，其特征在于，在蚀刻气体气氛中，通过用离子束或电子束等聚焦能量束照射样品，使用聚焦能量束进行聚焦能量束照射区域的局部能量束处理。 作为蚀刻气体，使用与常规方法不同组成的混合气体，并将气体均匀地供给到蚀刻区域，并且这种混合气体的至少一个成分是用于蚀刻样品的自发反应气体 自发和各向同性。 通过这种布置，由于单一蚀刻气体引起反应太剧烈或几乎几乎不发生反应，因此可以局部蚀刻局部蚀刻不可能提供的材料。

    Phase shift mask, method of correcting the same and apparatus for carrying out the method
    3.
    发明授权
    Phase shift mask, method of correcting the same and apparatus for carrying out the method 失效
    相移掩模，校正方法以及执行该方法的装置

    公开(公告)号：US5358806A

    公开(公告)日：1994-10-25

    申请号：US854861

    申请日：1992-03-19

    Applicant: Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

    Inventor： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

    IPC: G03F1/26 ,  G03F1/74 ,  G03F9/00

    CPC classification number: H01J37/228 ,  G03F1/74 ,  H01J37/3056 ,  G03F1/26 ,  H01J2237/2482 ,  H01J2237/30466

    Abstract: A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.

    Abstract translation: 具有设置在透明基板上的移相器的相移掩模的缺陷形成为预定图案并且用于移动透过其的曝光光的相位和设置在移相器和透明基板之间的蚀刻阻挡层， 对于移相器经受的蚀刻和曝光的透明度的蚀刻是通过沿相位的整个厚度相对于蚀刻停止层选择性蚀刻缺陷型缺陷的相移器的缺陷部分而被校正的 并且通过将位于蚀刻的缺陷部分下方的蚀刻阻挡层和透明基板的一部分穿孔相当于用于曝光光的移相器的光路的大小的深度，蚀刻是使用的反应性蚀刻 带电粒子束和反应性气体，并且通过利用被蚀刻的部分的底表面变平 移相器被选择性蚀刻的事实。

    Method of providing a semiconductor IC device with an additional conduction path
    4.
    发明授权
    Method of providing a semiconductor IC device with an additional conduction path 失效
    提供具有附加传导路径的半导体IC器件的方法

    公开(公告)号：US5026664A

    公开(公告)日：1991-06-25

    申请号：US334145

    申请日：1989-04-06

    Applicant: Mikio Hongo ,  Katsuro Mizukoshi ,  Shuzo Sano ,  Takashi Kamimura ,  Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi

    Inventor： Mikio Hongo ,  Katsuro Mizukoshi ,  Shuzo Sano ,  Takashi Kamimura ,  Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi

    IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

    CPC classification number: H01L21/76838 ,  H01L21/32051 ,  H01L21/76892 ,  Y10S148/093

    Abstract: A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.

    Abstract translation: 具有衬底，用于衬底中的区域的互连的图案化导体层和覆盖该器件的钝化层的半导体IC器件被设置有去除图案和/或图案化导体层的一部分的附加传导路径用于断开 评估设备特点的目的。 附加传导路径是通过在钝化层中形成一个孔而露出导体层的一部分而形成的，该导体层的一部分在包含金属化合物气体的气氛中引导离子束到孔上并延伸到钝化层的预定部分上 其形成图案的附加传导路径，从而形成从金属化合物气体分解的金属的图案化膜，并在图案化膜上形成附加导体。 提供额外的传导路径和/或去除图案化的导体层的一部分在化学气相沉积设备中预先形成，该化学气相沉积设备包括真空室和离子束辐射单元，该单元具有被分隔成例如第一，第二 和第三个隔间。 离子束辐射单元具有放置在第一隔室中的离子源，放置在第二隔室中的离子束聚焦和偏转装置以及由第三隔间构成的压力缓冲器。 第三隔室与真空室联接并气动隔离，用于传导从离子源发射的离子束，通过第二隔室并从第二隔室喷射到真空室。

    Method for making specimen and apparatus thereof
    6.
    发明授权
    Method for making specimen and apparatus thereof 失效
    制作标本及其装置的方法

    公开(公告)号：US5656811A

    公开(公告)日：1997-08-12

    申请号：US490423

    申请日：1995-06-14

    Applicant: Fumikazu Itoh ,  Toshihiko Nakata ,  Tohru Ishitani ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Takashi Kamimura

    Inventor： Fumikazu Itoh ,  Toshihiko Nakata ,  Tohru Ishitani ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Takashi Kamimura

    IPC: G01B11/06 ,  B23K15/00 ,  C23F4/00 ,  G01N1/28 ,  G01N1/32 ,  G01Q60/00 ,  H01J37/26 ,  H01J37/28 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/66 ,  H01J37/30

    CPC classification number: H01J37/3056 ,  G01N1/32 ,  H01J37/226 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/30466 ,  H01J2237/3114 ,  H01J2237/31745

    Abstract: A method for making a specimen for use in observation through a transparent electron microscope, includes a step of milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step of observing a mark for detection of a position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the milling, and a step of compensating for positional drift of the focused ion beam during milling in accordance with a result of the observation. The method is carried out by an apparatus which includes irradiation area control means for controlling an irradiation area of the focused ion beam onto the specimen so that a surface of the specimen to be milled into the thin film part is not included in the secondary charged particle image when the secondary charged particle image of the surface, on which the mark for detecting the milling position of the specimen is formed, is displayed by the secondary charged particle image during milling part of the specimen, and compensation means for compensating the positional drift of the focused ion beam during milling in accordance with the mark for detecting the milling position.

    Abstract translation: 通过透明电子显微镜制造用于观察的试样的方法包括通过扫描和照射聚焦离子束将样品的一部分研磨成薄膜部分的步骤，其可以通过透明电子显微镜观察 样品，通过扫描并将带电粒子束照射到样本上而不将所述被加入的颗粒束照射到待研磨的部分上来观察用于检测设置在样品上的位置的标记作为二次带电粒子图像的步骤， 在研磨期间的薄膜部分，以及根据观察结果补偿在研磨期间聚焦离子束的位置漂移的步骤。 该方法由包括照射区域控制装置的装置进行，该照射区域控制装置用于将聚焦离子束的照射区域控制在样本上，使得待研磨到薄膜部分中的样品的表面不包括在二次带电粒子中 当在样品的研磨部分期间，通过二次带电粒子图像显示用于检测样品的研磨位置的标记的表面的二次带电粒子图像的图像，以及用于补偿样品的位置漂移的补偿装置 根据用于检测铣削位置的标记在铣削期间聚焦的离子束。

    Method of etching a semiconductor device by an ion beam
    7.
    发明授权
    Method of etching a semiconductor device by an ion beam 失效
    通过离子束蚀刻半导体器件的方法

    公开(公告)号：US5086015A

    公开(公告)日：1992-02-04

    申请号：US394364

    申请日：1989-08-15

    Applicant: Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

    Inventor： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

    IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768

    CPC classification number: H01L21/76802 ,  Y10S148/046

    Abstract: A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.

    Abstract translation: 公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且 上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。 此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤 具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔 在半导体器件中形成预定形状。

    Machine for winding and inserting coils
    8.
    发明授权
    Machine for winding and inserting coils 失效
    卷绕线圈机

    公开(公告)号：US4299023A

    公开(公告)日：1981-11-10

    申请号：US109418

    申请日：1980-01-03

    Applicant: Minoru Tanaka ,  Fumikazu Itoh ,  Hiroshi Saitoh ,  Takashi Kobayashi ,  Akiyoshi Sasaki ,  Norio Akutsu

    Inventor： Minoru Tanaka ,  Fumikazu Itoh ,  Hiroshi Saitoh ,  Takashi Kobayashi ,  Akiyoshi Sasaki ,  Norio Akutsu

    IPC: H02K15/04 ,  H02K15/06

    CPC classification number: H02K15/068 ,  H02K15/0435 ,  Y10T29/49009 ,  Y10T29/5137 ,  Y10T29/53152 ,  Y10T29/53161

    Abstract: In a machine for winding and inserting coils of the type wherein a flier is rotated so as to wind the conductor drawn from the flier around two blades of an insertion tooling and an auxiliary plate located radially outwardly of said two blades and spaced apart therefrom by a predetermined distance, thereby forming a coil which is directly inserted together with a wedge into slots of a magnetic core of a rotary electric machine, an improvement wherein the blades with wedge guides which form the insertion tooling are divided into alternating main and auxiliary blades equiangularly spaced apart from each other, the auxiliary blades being axially movable relative to said main blades in such a way that when the conductor is wound around a bobbin formed by two of the main blades and an auxiliary plate, the auxiliary blades are retracted away from the main blades, but when the wound coils are inserted into the slots of the magnetic core, the auxiliary blades are raised to align with the main blades, thus forming the insertion tooling. In addition, all the coils for one phase may be continuously wound so as to have only one starting lead and one finishing lead.

    Abstract translation: 在用于卷绕和插入类型的线圈的机器中，其中飞行器被旋转以便将从飞行器抽出的导体卷绕在插入工具的两个叶片和位于所述两个叶片的径向外侧并与之隔开的辅助板 从而形成一个线圈，该线圈与楔形件一起直接插入到旋转电机的磁芯的槽中，其中具有形成插入工具的楔形导向件的叶片被分成交替的主副叶片等间隔 辅助叶片相对于所述主叶片可以相对于所述主叶片轴向移动，使得当导体缠绕在由两个主叶片和辅助板形成的筒管上时，辅助叶片从主体 叶片，但是当绕线线圈插入到磁芯的槽中时，辅助叶片升高以与主体对准 从而形成插入工具。 此外，用于一相的所有线圈可以连续卷绕，以便仅具有一个起始线和一个精整线。

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