公开(公告)号：US5113072A

公开(公告)日：1992-05-12

申请号：US597354

申请日：1990-10-10

Applicant: Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

Inventor： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

IPC: H01L21/20 ,  G01Q30/16 ,  G01Q60/44 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L21/205 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/15 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  H01J37/08 ,  H01L21/2633 ,  H01L21/26546 ,  H01L21/8221 ,  H01L21/8252 ,  H01L29/151 ,  Y10S148/046 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/16 ,  Y10S438/962

Abstract: Disclosed is an apparatus for forming a device having a fine structure, the apparatus including a high intensity ion source. The apparatus can be used to form fine grooves and/or a fine film, by supplying a reactive gas to the surface to be etched or coated while irradiating a focused ion beam on the surface. A laser or electron beam can be irradiated on substantially the same axis as that of the focused ion beam, whereby defects arising due to ion beam processing can be repaired. The apparatus can further include ion beam current detection and measurement structure to determine when a predetermined thickness of coating or depth of etching is achieved. The apparatus can include multiple chambers sequentially holding the surface treated, and can include a scanning electron microscope for scanning the surface being coated or etched.

公开(公告)号：US5801472A

公开(公告)日：1998-09-01

申请号：US696089

申请日：1996-08-13

Applicant: Yasuo Wada ,  Munehisa Mitsuya ,  Tsuneo Ichiguchi ,  Tomihiro Hashizume ,  Seiji Heike ,  Mark Lutwyche ,  Satoshi Watanabe

Inventor： Yasuo Wada ,  Munehisa Mitsuya ,  Tsuneo Ichiguchi ,  Tomihiro Hashizume ,  Seiji Heike ,  Mark Lutwyche ,  Satoshi Watanabe

IPC: G01Q70/02 ,  G01Q70/08 ,  G11B9/00 ,  H02N1/00 ,  G01N23/00

CPC classification number: H02N1/008 ,  G01Q10/045 ,  G01Q60/16 ,  G11B9/14 ,  G11B9/1418 ,  G01Q70/06 ,  G11B9/1409 ,  Y10S977/872

Abstract: A device according to the present invention is a miniaturized efficient device wherein electromechanical transduction is enabled and which is provided with at least an integrated electrostatic actuator provide with an actuator in which a fixed portion and a movable portion are opposite, a plurality of which are arranged and the relative amount of movement of which is controlled by controlling electrostatic force operating between both, the movable portion moved by the integrated electrostatic actuator and a portion connected to the movable portion which can be operated mechanically. The probe of a scanning probe microscope is provided to the movable portion of the above actuator. The above transducer is provided with the structure in which a large number of such actuators are arranged two- or one-dimensionally.

Abstract translation: 根据本发明的装置是一种小型化的有效装置，其中机电转换是可以实现的，并且至少设置有一个集成的静电致动器，该静电致动器具有固定部分和可动部分相对的致动器，其中多个布置 并且通过控制两者之间的静电力操作，由一体式静电致动器移动的可动部分和连接到可机械操作的可动部分的部分来控制其相对移动量。 扫描探针显微镜的探针设置在上述致动器的可动部。 上述传感器具有其中大量这样的致动器被二维或一维布置的结构。

公开(公告)号：US4983540A

公开(公告)日：1991-01-08

申请号：US273012

申请日：1988-11-18

Applicant: Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

Inventor： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

IPC: H01L21/20 ,  G01Q30/16 ,  G01Q60/44 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L21/205 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/15 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  H01J37/08 ,  H01L21/2633 ,  H01L21/26546 ,  H01L21/8221 ,  H01L21/8252 ,  H01L29/151 ,  Y10S148/046 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/16 ,  Y10S438/962

Abstract: An ion beam (113) focused into a diameter of at most 0.1 .mu.m bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.

公开(公告)号：US06525336B1

公开(公告)日：2003-02-25

申请号：US08463761

申请日：1995-06-05

Applicant: Seiichi Kondo ,  Yasuo Wada ,  Tsuyoshi Uda ,  Tokuo Kure ,  Tsuneo Ichiguchi ,  Shinji Okazaki ,  Yoshimasa Murayama

Inventor： Seiichi Kondo ,  Yasuo Wada ,  Tsuyoshi Uda ,  Tokuo Kure ,  Tsuneo Ichiguchi ,  Shinji Okazaki ,  Yoshimasa Murayama

IPC: H01L2906

CPC classification number: G11C13/025 ,  B82Y10/00 ,  B82Y15/00 ,  G11C11/34 ,  G11C19/00 ,  G11C2216/08 ,  H01L49/006 ,  H03K19/02

Abstract: A superfine electronic device is disclosed, which is constructed by atomic fine lines having a structure in which a plurality of atoms are arranged on one or a plurality of straight lines, in a ring shape or on curves with a size of atomic level, and which includes elements for doping electrons and holes. Using these atomic fine lines, it is possible to integrate semiconductor elements utilizing pn junctions at an atomic level with a high density. A groove having a sufficiently small size is formed in an insulating film disposed on a substrate. Then, atoms or molecules are supplied on the substrate and in the groove, which and are heated to a temperature sufficiently high for moving the atoms or molecules during or after the supply thereof to form a quantum fine line at edge portions of the groove.

Abstract translation: 公开了一种超细电子器件，其由具有多个原子排列在一个或多个直线上的原子细线构成，具有环形或具有原子级尺寸的曲线，并且其中 包括用于掺杂电子和空穴的元件。 使用这些原子细线，可以利用高密度的原子级的pn结集成半导体元件。 在设置在基板上的绝缘膜中形成具有足够小尺寸的凹槽。 然后，原子或分子被提供在衬底和沟槽中，并且被加热到足够高的温度以在其供给期间或之后移动原子或分子，以在槽的边缘部分处形成量子细线。

公开(公告)号：US5561300A

公开(公告)日：1996-10-01

申请号：US994968

申请日：1992-12-22

Applicant: Yasuo Wada ,  Seiichi Kondo ,  Tsuyoshi Uda ,  Masukazu Igarashi ,  Hiroshi Kajiyama ,  Hisashi Nagano ,  Akito Sakurai ,  Tsuneo Ichiguchi

Inventor： Yasuo Wada ,  Seiichi Kondo ,  Tsuyoshi Uda ,  Masukazu Igarashi ,  Hiroshi Kajiyama ,  Hisashi Nagano ,  Akito Sakurai ,  Tsuneo Ichiguchi

IPC: G01Q90/00 ,  G11B9/00 ,  G11C11/34 ,  G11C13/00 ,  G11C19/00 ,  H01L27/06 ,  H01L27/085 ,  H01L49/00 ,  H03F3/04 ,  H03K17/51 ,  H03K17/54 ,  H03K17/56 ,  H03K19/02 ,  H03K19/08 ,  H01J37/30 ,  H02B1/24

CPC classification number: B82Y15/00 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1463 ,  G11C11/34 ,  G11C13/00 ,  G11C19/00 ,  H01L27/06 ,  H01L27/085 ,  H01L49/00 ,  H01L49/006 ,  H03F3/04 ,  H03K17/51 ,  H03K17/545 ,  H03K17/56 ,  H03K19/02 ,  H03K19/08 ,  G11C13/025 ,  G11C2213/81 ,  G11C2216/08 ,  Y10S977/94 ,  Y10T307/74 ,  Y10T307/937

Abstract: In an atomic switch, opposite ends of an atom wire are connected to an input and output, and a switching gate is connected to a switching power supply. An input signal is outputted when a switching atom is connected to the atom wire, whereas an input signal is not outputted when the switching atom is moved to disconnect from the atom wire. There are provided an atom wire having a plurality of atoms arranged in a line or in a plurality of lines, in a ring shape, or in a curved line, and a switching gate made of an atom wire. The atom wire is switched by the field effect of the switching gate.

Abstract translation: 在原子开关中，原子线的相对端连接到输入和输出，并且开关栅极连接到开关电源。 当切换原子连接到原子线时输出输入信号，而当切换原子移动以与原子线分离时，输出信号不输出。 提供一种原子线，其具有以线状或多条排列成环状或曲线的多个原子以及由原子线构成的开关栅极。 原子线由开关栅极的场效应切换。