Patent search ap:"Carsten von Koblinski" Page 1

1.

发明授权
Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements 有权
Title translation: 生产复合材料，相关复合材料和相关半导体电路布置的方法

公开(公告)号：US08922016B2

公开(公告)日：2014-12-30

申请号：US13218222

申请日：2011-08-25

Applicant: Oliver Hellmund , Daniel Kraft , Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten Von Koblinski

Inventor： Oliver Hellmund , Daniel Kraft , Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten Von Koblinski

IPC: H01L23/48 , H01L29/49 , H01L29/739

CPC classification number: H01L29/7397 , H01L29/4966 , H01L2924/0002 , Y10T428/249967 , Y10T428/24997 , H01L2924/00

Abstract: A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another.

Abstract translation: 公开了一种生产复合材料，相关复合材料和相关半导体电路装置的方法。将多个第一导电材料颗粒施加到载体基板上，并且将第二导电材料电沉积在第一材料颗粒的表面上，使得第二材料将多个第一材料颗粒机械地和电连接到另一个。

2.

发明申请
Glass Piece and Methods of Manufacturing Glass Pieces and Semiconductor Devices with Glass Pieces 有权
Title translation: 玻璃片和玻璃制品的半导体器件制造方法

公开(公告)号：US20130237034A1

公开(公告)日：2013-09-12

申请号：US13415376

申请日：2012-03-08

Applicant: Alexander Breymesser , Andre Brockmeier , Carsten von Koblinski , Francisco Javier Santos Rodriguez

Inventor： Alexander Breymesser , Andre Brockmeier , Carsten von Koblinski , Francisco Javier Santos Rodriguez

IPC: H01L21/78 , C03B19/00 , B32B3/30 , C03B23/02

CPC classification number: B81C99/008 , B81C2201/034 , C03B11/082 , C03B40/02 , C03B2215/07 , C03B2215/79 , G02B2006/12038 , H01L21/56 , H01L23/291 , H01L23/3178 , H01L2924/0002 , Y10T428/24479 , H01L2924/00

Abstract: A source material, which is based on a glass, is arranged on a working surface of a mold substrate. The mold substrate is made of a single-crystalline material. A cavity is formed in the working surface. The source material is pressed against the mold substrate. During pressing a temperature of the source material and a force exerted on the source material are controlled to fluidify source material. The fluidified source material flows into the cavity. Re-solidified source material forms a glass piece with a protrusion extending into the cavity. After re-solidifying, the glass piece may be bonded to the mold substrate. On the glass piece, protrusions and cavities can be formed with slope angles less than 80 degrees, with different slope angles, with different depths and widths of 10 micrometers and more.

Abstract translation: 基于玻璃的源材料被布置在模具基板的工作表面上。模具基材由单晶材料制成。在工作面上形成空腔。源材料被压靠在模具基底上。在压制源材料的温度期间，并且控制施加在源材料上的力以使原料流体化。流化的原料流入空腔。再固化的源材料形成具有延伸到空腔中的突起的玻璃片。重新固化后，玻璃片可以结合到模制基底上。在玻璃片上，可以形成倾斜角度小于80度的倾斜角度，具有不同的倾斜角度，不同的深度和宽度为10微米等。

3.

发明授权
Semiconductor device, wafer assembly and methods of manufacturing wafer assemblies and semiconductor devices 有权
Title translation: 半导体器件，晶片组件以及制造晶片组件和半导体器件的方法

公开(公告)号：US09219020B2

公开(公告)日：2015-12-22

申请号：US13415340

申请日：2012-03-08

Applicant: Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt

Inventor： Alexander Breymesser , Andre Brockmeier , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze , Carsten von Koblinski , Gerhard Schmidt

IPC: H01L21/00 , H01L23/31 , H01L21/20 , H01L21/56 , H01L21/762

CPC classification number: H01L21/78 , H01L21/2007 , H01L21/56 , H01L21/76224 , H01L23/3178 , H01L23/564 , H01L29/7393 , H01L29/78 , H01L29/861 , H01L2924/0002 , H01L2924/00

Abstract: A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls.

Abstract translation: 在其中形成半导体元件的基板的工作表面中形成空腔。将由玻璃材料形成的玻璃片接合到基板上，并且用玻璃材料填充空腔。例如，使用预先图案化的玻璃片，其包括配合到空腔中的突起。宽度大于10微米的腔体被快速可靠地填充。空腔可以具有倾斜的侧壁。

4.

发明授权
Semiconductor packages and methods for producing the same 有权
Title translation: 半导体封装及其制造方法

公开(公告)号：US09013890B2

公开(公告)日：2015-04-21

申请号：US13348531

申请日：2012-01-11

Applicant: Udo Ausserlechner , Carsten von Koblinski , Sigrid Wabnig , Volker Strutz , Robert Grünberger

Inventor： Udo Ausserlechner , Carsten von Koblinski , Sigrid Wabnig , Volker Strutz , Robert Grünberger

IPC: H05K7/00 , G01R15/20 , G01R33/07 , H01L23/16 , H01L23/31 , H01L23/00

CPC classification number: G01R15/20 , G01R15/207 , G01R33/072 , H01L23/047 , H01L23/16 , H01L23/3107 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32111 , H01L2224/32237 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48105 , H01L2224/48177 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48463 , H01L2224/49107 , H01L2224/49109 , H01L2224/49171 , H01L2224/49177 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01079 , H01L2924/01087 , H01L2924/0781 , H01L2924/14 , H01L2924/15153 , H01L2924/15788 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599

Abstract: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane portion of the isolating container.

Abstract translation: 在一个实施例中，半导体封装包括具有形成内膜部分和外缘部分的凹部的隔离容器。边缘部分比膜部分厚。封装包括设置在凹部中的半导体芯片和设置在隔离容器的膜部下方的背板。

5.

发明授权
Semiconductor device and method for producing such a device 有权
Title translation: 半导体装置及其制造方法

公开(公告)号：US08610257B2

公开(公告)日：2013-12-17

申请号：US13269918

申请日：2011-10-10

Applicant: Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten von Koblinski

Inventor： Friedrich Kroener , Francisco Javier Santos Rodriguez , Carsten von Koblinski

IPC: H01L23/06 , H01L23/04 , H01L29/40 , H01L23/52 , H01L23/48 , H01L23/12 , H01L23/13 , H01L23/14 , H01L23/15

CPC classification number: H01L24/94 , H01L21/76898 , H01L24/83 , H01L2221/68363 , H01L2224/83192 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/00

Abstract: A semiconductor device and method for producing such a device is disclosed. One embodiment provides a semiconductor functional wafer having a first and second main surface. Component production processes are performed for producing a component functional region at the first main surface, wherein the component production processes produce an end state that is stable up to at least a first temperature. A carrier substrate is fitted to the first main surface. Access openings are produced to the first main surface. At least one further component production process is performed for producing patterned component functional regions at the first main surface of the functional wafer in the access openings. The end state produced in this process is stable up to a second temperature, which is less than the first temperature.

Abstract translation: 公开了一种用于制造这种器件的半导体器件和方法。一个实施例提供了具有第一和第二主表面的半导体功能晶片。在第一主表面上进行用于制造组分功能区的组分制备方法，其中组分生产过程产生在至少第一温度下是稳定的结束状态。载体基板装配到第一主表面。产生到第一主表面的进入开口。进行至少一个进一步的部件生产过程，用于在进入开口中的功能晶片的第一主表面处产生图案化部件功能区域。在该过程中产生的最终状态是稳定的，直到第二温度小于第一温度。

6.

发明授权
Method for the fabrication of semiconductor devices including attaching chips to each other with a dielectric material 有权
Title translation: 用于制造半导体器件的方法，包括用电介质材料彼此连接芯片

公开(公告)号：US07767495B2

公开(公告)日：2010-08-03

申请号：US12197602

申请日：2008-08-25

Applicant: Edward Fuergut , Joachim Mahler , Carsten von Koblinski , Ivan Nikitin

Inventor： Edward Fuergut , Joachim Mahler , Carsten von Koblinski , Ivan Nikitin

IPC: H01L21/44 , H01L21/50

CPC classification number: H01L24/25 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/16 , H01L23/295 , H01L23/3114 , H01L23/492 , H01L23/5389 , H01L24/82 , H01L24/96 , H01L24/97 , H01L2221/68345 , H01L2224/04105 , H01L2224/06181 , H01L2224/19 , H01L2224/32245 , H01L2224/73267 , H01L2224/76155 , H01L2224/82039 , H01L2224/82047 , H01L2224/82102 , H01L2224/92244 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01327 , H01L2924/10329 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2224/82 , H01L2924/00

Abstract: A semiconductor device and manufacturing method. One embodiment provides at least two semiconductor chips. A dielectric material is applied to the at least two semiconductor chips to attach the at least two semiconductor chips to each other. A portion of the dielectric material is selectively removed between the at least two semiconductor chips to form at least one recess in the dielectric material. Metal particles including paste is applied to the at least one recess in the dielectric material.

Abstract translation: 半导体器件及其制造方法。一个实施例提供至少两个半导体芯片。将介电材料施加到至少两个半导体芯片以将至少两个半导体芯片彼此附接。电介质材料的一部分在至少两个半导体芯片之间被选择性地去除以在电介质材料中形成至少一个凹槽。包含糊料的金属颗粒被施加到电介质材料中的至少一个凹部。

7.

发明授权
Semiconductor structure with a plastic housing and separable carrier plate 有权
Title translation: 具有塑料外壳和可分离载板的半导体结构

公开(公告)号：US07622733B2

公开(公告)日：2009-11-24

申请号：US11685005

申请日：2007-03-12

Applicant: Edward Fuergut , Thomas Kalin , Holger Woerner , Carsten Von Koblinski

Inventor： Edward Fuergut , Thomas Kalin , Holger Woerner , Carsten Von Koblinski

IPC: H01L35/24 , H01L51/00 , H01L23/48 , H01L23/52 , H01L29/40

CPC classification number: H01L21/6835 , H01L21/568 , H01L23/5389 , H01L24/19 , H01L24/96 , H01L2224/04105 , H01L2224/12105 , H01L2224/92 , H01L2924/01004 , H01L2924/01006 , H01L2924/0101 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01052 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01082 , H01L2924/09701 , H01L2924/3511 , H01L2224/96 , H01L2224/82 , H01L2924/00

Abstract: A semiconductor structure includes: a carrier plate; a thermosensitive adhesive coupled to a top surface of the carrier plate, which is removable from the carrier plate at a predetermined, defined temperature at which the thermosensitive adhesive loses its adhesive action; semiconductor chips having active top surfaces and back surfaces, where the active top surfaces include contact surfaces disposed on the thermosensitive adhesive; and a plastic embedding compound on the carrier plate, in which the semiconductor chips are embedded.

Abstract translation: 半导体结构包括：载板; 耦合到所述载体板的顶表面的热敏粘合剂，其在所述热敏粘合剂失去其粘合作用的预定的限定温度下可从所述载体板移除; 半导体芯片具有有效的顶表面和后表面，其中活性顶表面包括设置在热敏粘合剂上的接触表面; 以及嵌入半导体芯片的载体板上的塑料嵌入化合物。

8.

发明授权
Chip package and a method for manufacturing a chip package 有权
Title translation: 芯片封装和芯片封装的制造方法

公开(公告)号：US08841768B2

公开(公告)日：2014-09-23

申请号：US13555248

申请日：2012-07-23

Applicant: Carsten Von Koblinski , Michael Knabl , Ursula Meyer , Francisco Javier Santos Rodriguez , Alexander Breymesser , Andre Brockmeier

Inventor： Carsten Von Koblinski , Michael Knabl , Ursula Meyer , Francisco Javier Santos Rodriguez , Alexander Breymesser , Andre Brockmeier

IPC: H01L23/48

CPC classification number: H01L23/44 , H01L23/3121 , H01L23/473 , H01L23/5389 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2224/04105 , H01L2224/06181 , H01L2224/24137 , H01L2224/291 , H01L2224/2919 , H01L2224/32013 , H01L2224/32057 , H01L2224/32237 , H01L2224/73267 , H01L2224/83411 , H01L2224/83418 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83464 , H01L2224/83466 , H01L2224/83469 , H01L2224/83471 , H01L2224/83473 , H01L2224/83476 , H01L2224/8348 , H01L2224/83484 , H01L2224/92244 , H01L2224/97 , H01L2924/07802 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/12042 , H01L2924/1301 , H01L2924/13026 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/1431 , H01L2924/1433 , H01L2924/1461 , H01L2924/15153 , H01L2924/15159 , H01L2924/15788 , H01L2924/351 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/82 , H01L2224/83

Abstract: A chip package is provided, the chip package including: first encapsulation structure; first passivation layer formed over first encapsulation structure and first electrically conductive layer formed over first passivation layer; at least one chip arranged over first electrically conductive layer and passivation layer wherein at least one chip contact pad contacts first electrically conductive layer; at least one cavity formed in first encapsulation structure, wherein at least one cavity exposes a portion of first passivation layer covering at least one chip contact pad; second encapsulation structure disposed over first encapsulation structure and covering at least one cavity, wherein a chamber region over at least one chip contact pad is defined by at least one cavity and second encapsulation structure; wherein second encapsulation structure includes an inlet and outlet connected to chamber region, wherein inlet and outlet control an inflow and outflow of heat dissipating material to and from chamber region.

Abstract translation: 提供芯片封装，芯片封装包括：第一封装结构; 在第一封装结构上形成的第一钝化层和形成在第一钝化层上的第一导电层; 布置在第一导电层和钝化层之上的至少一个芯片，其中至少一个芯片接触焊盘接触第一导电层; 在第一封装结构中形成的至少一个空腔，其中至少一个空腔暴露覆盖至少一个芯片接触焊盘的第一钝化层的一部分; 第二封装结构设置在第一封装结构上并且覆盖至少一个空腔，其中至少一个芯片接触焊盘上的腔室区域由至少一个空腔和第二封装结构限定; 其中第二封装结构包括连接到室区域的入口和出口，其中入口和出口控制散热材料流入和流出室区域。