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    METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT
    81.
    发明申请
    METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT 审中-公开

    公开(公告)号：US20180202066A1

    公开(公告)日：2018-07-19

    申请号：US15923360

    申请日：2018-03-16

    申请人： Varian Semiconductor Equipment Associates, Inc.

    发明人： Brian H. Mackintosh ,  Peter L. Kellerman ,  Dawei Sun

    IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B15/06

    摘要： An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

    Thermal load leveling during silicon crystal growth from a melt using anisotropic materials
    84.
    发明授权
    Thermal load leveling during silicon crystal growth from a melt using anisotropic materials 有权
    使用各向异性材料从熔体生长硅晶体期间的热负荷均衡

    公开(公告)号：US09464364B2

    公开(公告)日：2016-10-11

    申请号：US13292410

    申请日：2011-11-09

    申请人： Frederick M. Carlson ,  Brian T. Helenbrook

    发明人： Frederick M. Carlson ,  Brian T. Helenbrook

    IPC分类号： C30B15/30 ,  C30B29/06 ,  C30B15/00 ,  C30B15/06 ,  C30B15/14 ,  C30B15/22

    CPC分类号： C30B15/06 ,  C30B15/007 ,  C30B15/14 ,  C30B15/206 ,  C30B15/22 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  Y10T117/1024

    摘要： An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

    摘要翻译： 公开了一种用于生长包括热源，各向异性热负荷调平部件，坩埚和冷板部件的硅晶体基板的设备。 各向异性热负荷均衡部件具有高导热性，并且可以放置在热源顶部，以适应于平衡来自热源的温度和热通量变化。 坩埚可以操作以容纳熔融硅，其中熔融硅的顶表面可以被定义为生长界面。 坩埚可以基本上被各向异性热负荷调平部件包围。 冷板组件可以位于坩埚上方以与各向异性热负荷调平组件和热源一起工作以在熔融硅的生长表面处保持均匀的热通量。

    APPARATUS AND METHOD FOR CONTROLLING THICKNESS OF A CRYSTALLINE SHEET GROWN ON A MELT
    85.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING THICKNESS OF A CRYSTALLINE SHEET GROWN ON A MELT 审中-公开
    用于控制熔体上形成的晶体薄片的厚度的装置和方法

    公开(公告)号：US20160108549A1

    公开(公告)日：2016-04-21

    申请号：US14517217

    申请日：2014-10-17

    申请人： Varian Semiconductor Equipment Associates, Inc.

    发明人： Peter L. Kellerman ,  Frederick M. Carlson ,  David Morrell ,  Brian Mackintosh ,  Nandish Desai

    IPC分类号： C30B15/06 ,  C30B29/64 ,  C30B15/14 ,  C30B15/26 ,  C30B15/22

    CPC分类号： C30B15/06 ,  C30B11/001 ,  C30B11/003 ,  C30B11/006 ,  C30B15/002 ,  C30B15/14 ,  C30B15/22 ,  C30B15/26 ,  C30B29/06 ,  C30B29/64 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1068

    摘要： An apparatus may include a crucible configured to contain the melt, the melt having an exposed surface separated from a floor of the crucible by a first distance, a housing comprising a material that is non-contaminating to the melt, the housing comprising a plurality of sidewalls and a top that are configured to contact the melt, and a plurality of heating elements isolated from the melt and disposed along a transverse direction perpendicular to a pulling direction of the crystalline sheet, the plurality of heating elements being individually powered, wherein the plurality of heating elements are disposed at a second set of distances from the exposed surface of the melt that are less than the first distance, and wherein the plurality of heating elements are configured to vary a heat flux profile along the transverse direction when power is supplied individually to the plurality of heating elements.

    摘要翻译： 一种装置可以包括：坩埚，其被配置为容纳熔体，所述熔体具有从坩埚的地板分离第一距离的暴露表面;壳体，包括不污染熔体的材料，所述壳体包括多个 侧壁和顶部，其被配置为接触熔体，以及多个加热元件，其与熔体隔离并且沿着垂直于结晶片的拉出方向的横向方向设置，多个加热元件被单独供电，其中多个 的加热元件设置在与熔体的暴露表面小于第一距离的第二组距离处，并且其中多个加热元件构造成在单独供电时沿横向改变热通量分布 到多个加热元件。

    SYSTEM AND METHOD FOR FORMING A SILICON WAFER
    87.
    发明申请
    SYSTEM AND METHOD FOR FORMING A SILICON WAFER 审中-公开
    用于形成硅波的系统和方法

    公开(公告)号：US20150176151A1

    公开(公告)日：2015-06-25

    申请号：US14136296

    申请日：2013-12-20

    申请人： Energy Materials Research, LLC

    发明人： Carl E. Bleil

    IPC分类号： C30B15/16 ,  C30B15/00 ,  C30B15/06

    CPC分类号： C30B15/16 ,  C30B15/002 ,  C30B15/06 ,  C30B15/22 ,  C30B29/06 ,  Y10T117/1048

    摘要： An apparatus for forming a crystalline ribbon from molten silicon having a silicon ribbon support. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A controller configured to control the removal of heat from the melted ribbon of material in a direction substantially perpendicular to the surface of the molten silicon to effect crystal growth, and to control the fluid level of the material in the crucible.

    摘要翻译： 一种用于从具有硅带支撑体的熔融硅形成结晶带的装置。 提供加热器，其包括平行于熔融硅表面的一对隔开的平面电极，用于将射频电流电容耦合到材料中，使得材料带沿着区域熔化。 提供与导电和半导电电极之间的相应冷却器和电介质层热接触的导电电极。 控制器，被配置为控制从基本上垂直于熔融硅表面的方向从熔融的材料带去除热量以实现晶体生长，并且控制坩埚中的材料的液位。

    Device for Fabricating a Ribbon of Silicon or Other Crystalline Materials and Method of Fabrication
    89.
    发明申请
    Device for Fabricating a Ribbon of Silicon or Other Crystalline Materials and Method of Fabrication 审中-公开
    用于制造硅或其他结晶材料的带的装置和制造方法

    公开(公告)号：US20090139445A1

    公开(公告)日：2009-06-04

    申请号：US11992754

    申请日：2006-10-19

    申请人： Roland Einhaus ,  Francois Lissalde ,  Hubert Lauvray

    发明人： Roland Einhaus ,  Francois Lissalde ,  Hubert Lauvray

    IPC分类号： C30B15/06 ,  C30B15/00

    CPC分类号： H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1092

    摘要： The device comprises a crucible (1) having a bottom (2) and side walls (3). The crucible (1) comprises at least one lateral slit (4) arranged horizontally at a bottom part of the side walls (3). The lateral slit (4) presents a width of more than 50 mm and preferably comprised between 100 mm and 500 mm. The height (H) of the slit (4) is comprised between 50 and 1000 micrometers. The crystalline material is output from the crucible via the lateral slit (4) so as to form a crystalline ribbon (R). The method comprises a step of bringing a crystallization seed into contact with the material output via the lateral slit (4) and a horizontal displacement step of the ribbon (R).

    摘要翻译： 该装置包括具有底部（2）和侧壁（3）的坩埚（1）。 所述坩埚（1）包括在所述侧壁（3）的底部水平设置的至少一个横向狭缝（4）。 横向狭缝（4）的宽度大于50mm，优选地在100mm和500mm之间。 狭缝（4）的高度（H）在50和1000微米之间。 结晶材料经由横向狭缝（4）从坩埚输出以形成结晶带（R）。 该方法包括使结晶种子经由横向狭缝（4）输出的材料和带（R）的水平位移步骤接触的步骤。

    Continuous crystal plate growth process and apparatus
    90.
    发明授权
    Continuous crystal plate growth process and apparatus 失效
    连续晶体板生长工艺及装置

    公开(公告)号：US6071339A

    公开(公告)日：2000-06-06

    申请号：US234411

    申请日：1999-01-21

    申请人： Kiril A. Pandelisev

    发明人： Kiril A. Pandelisev

    IPC分类号： C30B11/00 ,  C30B11/04 ,  C30B15/00 ,  C30B15/02 ,  C30B15/04 ,  C30B35/00 ,  C30B15/06

    CPC分类号： C30B15/04 ,  C30B11/00 ,  C30B11/001 ,  C30B11/04 ,  C30B15/00 ,  C30B15/002 ,  C30B15/02 ,  C30B29/12 ,  Y10S117/914 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/102 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

    摘要： A crystal plate 1 is grown in a continuous process by first purifying a crystal source material, a crystal melt or powder, in a purification station 3. Valves 7 control the flow of purified crystal melt or source powder 9 to a first hot zone 11, whose temperature is above the melt temperature of the crystal. A dopant source 17 with controller 19 provides dopant to the liquefied crystal 15. The first heater zone 21 surrounding the first hot zone 11 heats the crystal above its melting temperature. The second heater zone 27 produces a temperature in the second zone which is below the melt temperature of the crystal. The liquefied crystal, the liquid solid interface and the first portion of the crystal are supported in a boat-shaped crucible container with a bottom 31 and side walls. As the crystal leaves the support plate 31 it passes on to a conveyor 33. The crystal moves within an enclosure 43, which has a noble gas or noble gas and reactant gas atmosphere 45. A large heater has a first zone 37 which heats the initial part of the crystal apparatus to a temperature below the melt temperature, and a second zone 39 which maintains the crystal at a lower temperature. A purified and doped crystal emerges from the enclosure.

    摘要翻译： 通过在净化站3中首先纯化晶体源材料，晶体熔体或粉末，在连续工艺中生长晶体板1.阀7控制纯化的晶体熔体或源粉末9向第一热区11的流动， 其温度高于晶体的熔融温度。 具有控制器19的掺杂剂源17向液化晶体15提供掺杂剂。围绕第一热区11的第一加热区21将晶体加热到其熔融温度以上。 第二加热器区域27在第二区域中产生低于晶体熔融温度的温度。 液晶，液体固体界面和晶体的第一部分被支撑在具有底部31和侧壁的船形坩埚容器中。 当晶体离开支撑板31时，它传递到输送机33.晶体在具有惰性气体或惰性气体和反应气体气氛45的外壳43内移动。大型加热器具有第一区域37，其加热初始 晶体装置的一部分到低于熔融温度的温度，以及将晶体保持在较低温度的第二区39。 纯化和掺杂的晶体从外壳中出现。