APPARATUS AND METHOD FOR CONTROLLING THICKNESS OF A CRYSTALLINE SHEET GROWN ON A MELT
    5.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING THICKNESS OF A CRYSTALLINE SHEET GROWN ON A MELT 审中-公开
    用于控制熔体上形成的晶体薄片的厚度的装置和方法

    公开(公告)号:US20160108549A1

    公开(公告)日:2016-04-21

    申请号:US14517217

    申请日:2014-10-17

    摘要: An apparatus may include a crucible configured to contain the melt, the melt having an exposed surface separated from a floor of the crucible by a first distance, a housing comprising a material that is non-contaminating to the melt, the housing comprising a plurality of sidewalls and a top that are configured to contact the melt, and a plurality of heating elements isolated from the melt and disposed along a transverse direction perpendicular to a pulling direction of the crystalline sheet, the plurality of heating elements being individually powered, wherein the plurality of heating elements are disposed at a second set of distances from the exposed surface of the melt that are less than the first distance, and wherein the plurality of heating elements are configured to vary a heat flux profile along the transverse direction when power is supplied individually to the plurality of heating elements.

    摘要翻译: 一种装置可以包括:坩埚,其被配置为容纳熔体,所述熔体具有从坩埚的地板分离第一距离的暴露表面;壳体,包括不污染熔体的材料,所述壳体包括多个 侧壁和顶部,其被配置为接触熔体,以及多个加热元件,其与熔体隔离并且沿着垂直于结晶片的拉出方向的横向方向设置,多个加热元件被单独供电,其中多个 的加热元件设置在与熔体的暴露表面小于第一距离的第二组距离处,并且其中多个加热元件构造成在单独供电时沿横向改变热通量分布 到多个加热元件。