公开(公告)号：US08963107B2

公开(公告)日：2015-02-24

申请号：US13348855

申请日：2012-01-12

Applicant: Edward C. Eisner ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: G01K5/00 ,  H01J37/147

CPC classification number: H01J37/147 ,  G01K5/00 ,  H01J37/05 ,  H01J37/16 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.

Abstract translation: 可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。 包括其间的表面区域和凹槽的突起可以在来自光束线组件内的工件的视线范围内面对中性轨迹。 突起可以改变中性轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步减少更敏感的植入物的能量污染。

公开(公告)号：US08922122B2

公开(公告)日：2014-12-30

申请号：US13308614

申请日：2011-12-01

Applicant: Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01J7/24

CPC classification number: H01J37/026 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/06 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/31705

Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

Abstract translation: 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

公开(公告)号：US20140238300A1

公开(公告)日：2014-08-28

申请号：US14067477

申请日：2013-10-30

Applicant: NISSIN ION EQUIPMENT CO., LTD

Inventor： Shinya HISADA ,  Kohei TANAKA ,  Shigehisa TAMURA ,  Makoto NAKAYA

IPC: C23C14/48

CPC classification number: C23C14/48 ,  C23C14/50 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/1825 ,  H01J2237/20228 ,  H01J2237/31705

Abstract: An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

Abstract translation: 一种设置有晶片处理室的装置，其容纳支撑晶片的晶片支撑机构，并且用于利用离子束照射由晶片支撑机构支撑的晶片和容纳设置在晶片加工下方的输送机构的输送机构容纳室 并且用于沿大致水平的方向移动晶片支撑机构，其中用于将晶片支撑机构与将晶片支撑机构连接到输送机构的联接构件一起移动的孔形成在输送机构的移动方向上 在将晶片处理室与传送机构容纳室分开的分隔壁中。

公开(公告)号：US20140106550A1

公开(公告)日：2014-04-17

申请号：US13649364

申请日：2012-10-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORP

Inventor： Anthony I. Chou ,  Murshed M. Chowdhury ,  Arvind Kumar ,  Shreesh Narasimha ,  Craig M. Sinn

IPC: H01L21/265

CPC classification number: H01J37/3172 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/66772

Abstract: A method of ion implantation is disclosed. A beam of ions is accelerated to a first energy level. The beam of ions is decelerated from the first energy level to produce a contamination beam of ions via an ion collision process. The ions of the contamination beam are implanted in a substrate to obtain a selected dopant profile in the substrate.

Abstract translation: 公开了一种离子注入方法。 一束离子被加速到第一能级。 离子束从第一能级减速，通过离子碰撞过程产生离子的污染束。 将污染光束的离子注入到衬底中以在衬底中获得选定的掺杂剂分布。

公开(公告)号：US08673450B2

公开(公告)日：2014-03-18

申请号：US12084206

申请日：2006-10-12

Applicant: Kiyoshi Saito ,  Fumiaki Yokoyama ,  Hitoshi Suzuki ,  Atsuko Ando ,  Tetsuro Tojo ,  Seiji Shinohara

Inventor： Kiyoshi Saito ,  Fumiaki Yokoyama ,  Hitoshi Suzuki ,  Atsuko Ando ,  Tetsuro Tojo ,  Seiji Shinohara

IPC: A61N5/00 ,  G21K5/10 ,  H01J37/08 ,  G21G5/00 ,  C01B31/00 ,  C01B31/02 ,  C01B31/04 ,  H01L21/425

CPC classification number: H01J37/3171 ,  C04B35/522 ,  C04B35/532 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 μΩ·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm−1 by G band intensity at 1570 cm−1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.

Abstract translation: 本发明的问题在于，在高电流 - 低能量型离子注入装置中，提供一种用于离子注入装置的束线内部构件的石墨构件，该石墨构件可以显着地减少结合在晶片表面中的颗粒。 该问题可以通过本发明的石墨构件来解决，该石墨构件是用于离子注入装置的束线内部构件的石墨构件，其堆积密度不小于1.80Mg / m 3，并且电阻率 不超过9.5亩。 优选地，在石墨构件的自发断裂面的拉曼光谱中，将1370cm -1处的D带强度除以1570cm -1处的G带强度获得的R值不大于0.20。

公开(公告)号：US08124946B2

公开(公告)日：2012-02-28

申请号：US12477631

申请日：2009-06-03

Applicant: Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

Inventor： Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

IPC: H01J37/317 ,  H01J49/30 ,  H01J49/42

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J2237/0492 ,  H01J2237/103 ,  H01J2237/1405 ,  H01J2237/1501 ,  H01J2237/1523 ,  H01J2237/153 ,  H01J2237/21 ,  H01J2237/24528 ,  H01J2237/31705

Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

Abstract translation: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法，其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析，其中选择离子。 一旦离子束被质量分析，离子束然后通过减速器减速，并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供，其中形成磁场以截取离开减速器的离子束中的离子，以选择性地过滤不需要的离子和快速中性粒子。

公开(公告)号：US20110012033A1

公开(公告)日：2011-01-20

申请号：US12835138

申请日：2010-07-13

Applicant: Neil K. Colvin

Inventor： Neil K. Colvin

IPC: H01J37/317 ,  H01J37/02

CPC classification number: H01J37/3171 ,  H01J3/40 ,  H01J37/026 ,  H01J37/09 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable.

Abstract translation: 提供了用于减少离子注入系统中的颗粒污染的装置。 该装置具有外壳，其具有入口，出口和至少一个百叶窗，其中限定有多个百叶窗。 离子注入系统的束线通过入口和出口，其中至少一个百叶窗侧的多个百叶窗被配置为机械地过滤沿着束线行进的离子束的边缘。 外壳可以具有两个百叶窗和百叶窗顶部，其中当垂直于束线测量时，外壳的入口和出口的相应宽度通常由两个百叶窗相对于彼此的位置来限定。 一个或多个百叶窗侧面可以可调节地安装，其中外壳的入口和出口中的一个或多个的宽度是可控的。

公开(公告)号：US07609003B2

公开(公告)日：2009-10-27

申请号：US11365719

申请日：2006-03-01

Applicant: Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

Inventor： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

IPC: H01J7/24

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

Abstract translation: 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

公开(公告)号：US07583491B2

公开(公告)日：2009-09-01

申请号：US11436471

申请日：2006-05-18

Applicant: Scott Peitzsch

Inventor： Scott Peitzsch

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01J2237/0048 ,  H01J2237/2007 ,  H01J2237/31705 ,  H01L21/67011

Abstract: An ion implanter includes an electrostatic chuck. The electrostatic chuck is configured to repel charged particles from a surface of the electrostatic chuck to limit deposits of the charged particles on the surface when the electrostatic chuck is not supporting any workpiece. An electrostatic chuck including a dielectric layer and at least one electrode is also provided. The at least one electrode is configured to accept a DC voltage signal to produce a first charge to repel charged particles from the dielectric layer when the dielectric layer is not supporting any workpiece to thereby limit deposits of the charged particles on the dielectric layer.

Abstract translation: 离子注入机包括静电卡盘。 静电卡盘被配置为当静电卡盘不支撑任何工件时，从静电卡盘的表面排出带电粒子以限制带电粒子沉积在表面上。 还提供了包括电介质层和至少一个电极的静电卡盘。 所述至少一个电极被配置为当所述电介质层不支撑任何工件从而限制所述电介质层上带电粒子的沉积时，接受DC电压信号以产生第一电荷以从所述电介质层排斥带电粒子。

公开(公告)号：US20090181527A1

公开(公告)日：2009-07-16

申请号：US12084206

申请日：2006-10-12

Applicant: Kiyoshi Saito ,  Fumiaki Yokoyama ,  Hitoshi Suzuki ,  Atsuko Ando ,  Tetsuro Tojo ,  Seiji Shinohara

Inventor： Kiyoshi Saito ,  Fumiaki Yokoyama ,  Hitoshi Suzuki ,  Atsuko Ando ,  Tetsuro Tojo ,  Seiji Shinohara

IPC: H01L21/00 ,  H01J37/08 ,  H01J27/00

CPC classification number: H01J37/3171 ,  C04B35/522 ,  C04B35/532 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 μΩ·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm−1 by G band intensity at 1570 cm−1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.

Abstract translation: 本发明的问题在于，在高电流 - 低能量型离子注入装置中，提供一种用于离子注入装置的束线内部构件的石墨构件，该石墨构件可以显着地减少结合在晶片表面中的颗粒。 该问题可以通过本发明的石墨构件来解决，该石墨构件是用于离子注入装置的束线内部构件的石墨构件，其堆积密度不小于1.80Mg / m 3，并且电阻率 不超过9.5亩。 优选地，在石墨构件的自发断裂面的拉曼光谱中，将1370cm -1处的D带强度除以1570cm -1处的G带强度获得的R值不大于0.20。