Invention Application
US20140106550A1 ION IMPLANTATION TUNING TO ACHIEVE SIMULTANEOUS MULTIPLE IMPLANT ENERGIES
审中-公开
离子植入调谐以实现同时多种植入能量
- Patent Title: ION IMPLANTATION TUNING TO ACHIEVE SIMULTANEOUS MULTIPLE IMPLANT ENERGIES
- Patent Title (中): 离子植入调谐以实现同时多种植入能量
-
Application No.: US13649364Application Date: 2012-10-11
-
Publication No.: US20140106550A1Publication Date: 2014-04-17
- Inventor: Anthony I. Chou , Murshed M. Chowdhury , Arvind Kumar , Shreesh Narasimha , Craig M. Sinn
- Applicant: INTERNATIONAL BUSINESS MACHINES CORP
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Main IPC: H01L21/265
- IPC: H01L21/265
Abstract:
A method of ion implantation is disclosed. A beam of ions is accelerated to a first energy level. The beam of ions is decelerated from the first energy level to produce a contamination beam of ions via an ion collision process. The ions of the contamination beam are implanted in a substrate to obtain a selected dopant profile in the substrate.
Information query
IPC分类:
