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1.发明授权公开(公告)号：US07629590B2
公开(公告)日：2009-12-08
申请号：US11647714
申请日：2006-12-29
申请人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale C. Jacobson , Wade A. Krull
发明人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale C. Jacobson , Wade A. Krull
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/02 , H01J27/024 , H01J37/08 , H01J2209/017 , H01J2237/006 , H01J2237/022 , Y10T137/0357 , Y10T137/7759 , Y10T137/776 , Y10T137/7761 , Y10T137/85954 , Y10T137/85978 , Y10T137/85986 , Y10T137/86002
摘要： The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译： 离子源的使用寿命通过源具有用于使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洁以及具有延长清洁之间的使用持续时间的特征的源来增强或延长。 后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。 包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和提取电极中的沉积物。 这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。 描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。
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公开(公告)号：US5670784A
公开(公告)日：1997-09-23
申请号：US296711
申请日：1994-08-26
CPC分类号： G01J5/0014
摘要： A high temperature gas stream optical flame sensor for flame detection in gas turbine engines, the sensor generally comprising a silicon carbide photodiode and silicon carbide based amplification hardware for generating a signal indicative of the presence of the flame, in some embodiments the photodiode and amplification hardware being disposed within a sensor housing, in another embodiment for use in an aeroderivative premixed combustion system, the photodiode being situated within a fuel/air premixer.
摘要翻译： 一种用于燃气涡轮发动机中用于火焰检测的高温气流光学火焰传感器，该传感器通常包括碳化硅光电二极管和基于碳化硅的放大硬件，用于产生指示火焰存在的信号，在一些实施例中，光电二极管和放大硬件 设置在传感器壳体内，在另一个实施例中用于航空预混燃烧系统中，光电二极管位于燃料/空气预混合器内。
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公开(公告)号：US07609003B2
公开(公告)日：2009-10-27
申请号：US11365719
申请日：2006-03-01
IPC分类号： H01J7/24
CPC分类号： H01J27/205 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/0473 , H01J2237/0475 , H01J2237/0812 , H01J2237/082 , H01J2237/31703 , H01J2237/31705 , H01L21/26513 , H01L29/6659
摘要： Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.
摘要翻译： 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。
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公开(公告)号：US07064491B2
公开(公告)日：2006-06-20
申请号：US10433493
申请日：2001-06-12
CPC分类号： H01J27/205 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/0473 , H01J2237/0475 , H01J2237/0812 , H01J2237/082 , H01J2237/31703 , H01J2237/31705 , H01L21/26513 , H01L29/6659
摘要： Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.
摘要翻译： 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。
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5.发明授权公开(公告)号：US07820981B2
公开(公告)日：2010-10-26
申请号：US10582392
申请日：2004-12-09
申请人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale C. Jacobson , Wade A. Krull
发明人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale C. Jacobson , Wade A. Krull
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/02 , H01J27/024 , H01J37/08 , H01J2209/017 , H01J2237/006 , H01J2237/022 , Y10T137/0357 , Y10T137/7759 , Y10T137/776 , Y10T137/7761 , Y10T137/85954 , Y10T137/85978 , Y10T137/85986 , Y10T137/86002
摘要： The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译： 离子源的使用寿命通过源具有使用反应性卤素气体（F或Cl）对离子源和引出电极进行原位蚀刻清洁的规定而增强或延长，并且具有延长使用寿命的特征 清洁之间的持续时间。 后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。 包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和提取电极中的沉积物。 这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。 描述了使用十硼烷和十八烷硼烷作为原料的长设备正常运行时间以及当使用蒸发的元素砷和磷时能够延长设备运行时间的方法和装置，并且其用于增强离子注入期间的束稳定性。
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6.发明授权Method and apparatus for extracting ions from an ion source for use in ion implantation 有权用于离子注入离子源提取离子的方法和装置公开(公告)号：US07791047B2
公开(公告)日：2010-09-07
申请号：US11452003
申请日：2006-06-12
申请人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale Conrad Jacobson , Wade Allen Krull
发明人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale Conrad Jacobson , Wade Allen Krull
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/024 , H01J37/3171 , H01J2209/017 , H01J2237/006 , H01J2237/022 , H01J2237/0812 , H01J2237/083 , H01J2237/31701 , H01L21/265
摘要： Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要翻译： 为离子束产生系统的提取电极提供热控制，其防止沉积物的形成和不稳定的操作，并且能够与可冷凝蒸气和能够冷热操作的离子源产生的离子一起使用。 提取电极的电加热用于提取十硼烷或十八硼烷离子。 使用热离子源时的主动冷却可防止电极破坏，从而使引出电极具有导热和防氟的铝组成。 通过使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洗，并且具有延长清洗之间的使用持续时间的特征，包括准确的蒸汽流量控制和精确的聚焦，增强了系统的使用寿命 离子束光学。 远程等离子体源将F或Cl离子输送到去激活离子源，以清除离子源和提取电极中的沉积物。 这些技术使得在运行可冷凝的进料气体如升华蒸汽时长的设备正常运行时间，并且特别适用于所谓的冷离子源和通用离子源。 描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。
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公开(公告)号：US20100107980A1
公开(公告)日：2010-05-06
申请号：US11648269
申请日：2006-12-29
申请人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, JR. , Dale Conrad Jacobson , Wade Allen Krull
发明人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, JR. , Dale Conrad Jacobson , Wade Allen Krull
IPC分类号： C23C14/48
CPC分类号： H01J37/08 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/024 , H01J37/3171 , H01J2209/017 , H01J2237/006 , H01J2237/022 , H01J2237/0812 , H01J2237/083 , H01J2237/31701 , H01L21/265
摘要： Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
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公开(公告)号：US07528550B2
公开(公告)日：2009-05-05
申请号：US11648282
申请日：2006-12-29
IPC分类号： H01J27/00
CPC分类号： H01J27/205 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/0473 , H01J2237/0475 , H01J2237/0812 , H01J2237/082 , H01J2237/31703 , H01J2237/31705 , H01L21/26513 , H01L29/6659
摘要： An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.
摘要翻译： 公开了一种离子注入，其包括具有限制的出口孔的电离室，并且被构造成使得离子化室中的气体或蒸汽的压力显着高于离子被提取外部的提取区域内的压力 电离室。 通过电子源的直接电子轰击电离使蒸汽电离，该电子源位于邻近离子化室的出口孔的区域中，以产生从气体或蒸气的分子到在孔径处至少1010cm-3的密度的离子 同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束输送到目标表面，并将输送的离子束的离子注入靶中。
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公开(公告)号：US07394202B2
公开(公告)日：2008-07-01
申请号：US11647801
申请日：2006-12-29
IPC分类号： H01J7/24
CPC分类号： H01J27/205 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/0473 , H01J2237/0475 , H01J2237/0812 , H01J2237/082 , H01J2237/31703 , H01J2237/31705 , H01L21/26513 , H01L29/6659
摘要： An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.
摘要翻译： 公开了一种离子注入，其包括具有限制的出口孔的电离室，并且被构造成使得离子化室中的气体或蒸汽的压力显着高于离子被提取外部的提取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束输送到目标表面，并将输送的离子束的离子注入靶中。
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10.发明授权Method and apparatus for extracting ions from an ion source for use in ion implantation 失效用于离子注入离子源提取离子的方法和装置公开(公告)号：US08368309B2
公开(公告)日：2013-02-05
申请号：US11648269
申请日：2006-12-29
申请人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale Conrad Jacobson , Wade Allen Krull
发明人： Thomas N. Horsky , Robert W. Milgate, III , George P. Sacco, Jr. , Dale Conrad Jacobson , Wade Allen Krull
CPC分类号： H01J37/08 , C23C14/48 , C23C14/564 , H01J9/38 , H01J27/024 , H01J37/3171 , H01J2209/017 , H01J2237/006 , H01J2237/022 , H01J2237/0812 , H01J2237/083 , H01J2237/31701 , H01L21/265
摘要： Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition.
摘要翻译： 为离子束产生系统的提取电极提供热控制，其防止沉积物的形成和不稳定的操作，并且能够与可冷凝蒸气和能够冷热操作的离子源产生的离子一起使用。 提取电极的电加热用于提取十硼烷或十八硼烷离子。 使用热离子源时的主动冷却可防止电极破坏，从而使引出电极具有导热和防氟的铝组成。
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