Post-decel magnetic energy filter for ion implantation systems
    3.
    发明授权
    Post-decel magnetic energy filter for ion implantation systems 有权
    用于离子注入系统的减速磁能过滤器

    公开(公告)号:US08124946B2

    公开(公告)日:2012-02-28

    申请号:US12477631

    申请日:2009-06-03

    摘要: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

    摘要翻译: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法,其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析,其中选择离子。 一旦离子束被质量分析,离子束然后通过减速器减速,并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供,其中形成磁场以截取离开减速器的离子束中的离子,以选择性地过滤不需要的离子和快速中性粒子。

    POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS
    8.
    发明申请
    POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS 有权
    用于离子植入系统的后胶磁能过滤器

    公开(公告)号:US20090321630A1

    公开(公告)日:2009-12-31

    申请号:US12477631

    申请日:2009-06-03

    IPC分类号: B01D59/44 A61N5/00 H01J37/08

    摘要: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

    摘要翻译: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法,其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析,其中选择离子。 一旦离子束被质量分析,离子束然后通过减速器减速,并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供,其中形成磁场以截取离开减速器的离子束中的离子,以选择性地过滤不需要的离子和快速中性粒子。

    Ion beam diagnostics
    9.
    发明授权
    Ion beam diagnostics 失效
    离子束诊断

    公开(公告)号:US07479644B2

    公开(公告)日:2009-01-20

    申请号:US11589156

    申请日:2006-10-30

    IPC分类号: H01J37/317 H01L21/265

    摘要: This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.

    摘要翻译: 本发明涉及一种测量离子束的性质的方法,例如离子束电流分布或离子束的发射率。 采用包括离子束电流传感器阵列的法拉第阵列。 阵列可以在阵列的平面处提供离子束电流分布。 法拉第阵列还与可以通过法拉第阵列上游的离子束移动的阻塞元件结合使用,这掩盖了来自法拉第阵列的离子束的变化部分。 适当地操纵来自法拉第的信号允许针对封闭元件的平面确定离子束电流轮廓,并且还确定待确定的阻塞元件平面处的离子束的发射率。

    Ion beam monitoring arrangement
    10.
    发明申请
    Ion beam monitoring arrangement 审中-公开
    离子束监测装置

    公开(公告)号:US20080169435A1

    公开(公告)日:2008-07-17

    申请号:US11652651

    申请日:2007-01-12

    IPC分类号: G21K5/10 G01R31/00 G06F9/30

    摘要: This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the floating potential across an ion beam used for implantation. The invention provides a ion beam monitoring arrangement comprising a device configured to measure the floating potential of an ion beam when incident thereon, wherein the device is coupled to a substrate support so as to face outwardly in a position so as not to be obscured by a substrate of the contemplated size when held by the substrate holder. Thus, measurements of the floating potential may be taken with a substrate held in place. The ion beam monitoring arrangement may be used to move the device into the ion beam in much the same way as it used to scan a substrate through the ion beam.

    摘要翻译: 本发明涉及用于离子注入机的离子束监测装置,其中期望监测跨越用于植入的离子束的浮动电位。 本发明提供了一种离子束监测装置,其包括被配置为当入射在其上时测量离子束的浮置电位的装置,其中该装置耦合到衬底支撑件,以便在不被一个 基板保持器保持的预期尺寸的基板。 因此,浮动电位的测量可以在保持在适当位置的基板上进行。 离子束监测装置可以用于将装置以与用于通过离子束扫描基板的方式大致相同的方式移动到离子束中。