公开(公告)号：US08916954B2

公开(公告)日：2014-12-23

申请号：US13558826

申请日：2012-07-26

申请人： Venkatesan Murali ,  Thomas Edward Dinan, Jr. ,  Steve Bababyan ,  Gopal Prabhu

发明人： Venkatesan Murali ,  Thomas Edward Dinan, Jr. ,  Steve Bababyan ,  Gopal Prabhu

IPC分类号： H01L29/06

CPC分类号： H01L21/84 ,  H01L31/1892 ,  Y02E10/50

摘要： The invention provides a method of forming an electronic device from a lamina that has a coefficient of thermal expansion that is matched or nearly matched to a constructed metal support. In some embodiments the method comprises implanting the top surface of a donor body with an ion dosage to form a cleave plane followed by exfoliating a lamina from the donor body. After exfoliating the lamina, a flexible metal support that has a coefficient of thermal expansion with a value that is within 10% of the value of the coefficient of thermal expansion of the lamina is constructed on the lamina. In some embodiments the coefficients of thermal expansion of the metal support and the lamina are within 10% or within 5% of each other between the temperatures of 100 and 600° C.

摘要翻译： 本发明提供了一种从薄片形成电子器件的方法，其具有与构造的金属支撑件匹配或接近匹配的热膨胀系数。 在一些实施方案中，该方法包括用离子剂量植入供体体的顶表面以形成切割平面，随后从供体体剥离薄片。 在剥离层之后，在层板上形成具有热膨胀系数为10％以内的层的热膨胀系数的柔性金属支撑体。 在一些实施例中，金属载体和薄层的热膨胀系数在100和600℃的温度之间彼此的10％或5％以内。

公开(公告)号：US20130203251A1

公开(公告)日：2013-08-08

申请号：US13490460

申请日：2012-06-07

申请人： Venkatesan Murali ,  Arvind Chari ,  Gopal Prabhu

发明人： Venkatesan Murali ,  Arvind Chari ,  Gopal Prabhu

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/2007 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/49827 ,  H01L2221/68345 ,  H01L2224/16

摘要： An interposer is fabricated from a lamina. A donor body is provided, ions are implanted into a first surface of the donor body to define a cleave plane, a temporary carrier is separably contacted to the donor body, and the lamina is cleaved from the donor body. The lamina has front surface and a back surface, with a thickness from the front surface to the back surface. A via hole is formed in the lamina, where the via hole extends through the thickness of the lamina. The temporary carrier is removed from the lamina, and the lamina may be fabricated into an interposer for three-dimensional integrated circuit packages.

摘要翻译： 插层由薄片制成。 提供供体，离子被植入供体体的第一表面以限定劈平面，临时载体与供体本体分离接触，并且层从供体体上切下。 薄片具有从前表面到后表面的前表面和后表面。 通孔形成在层板中，通孔延伸穿过层的厚度。 将临时载体从薄片上移除，并将薄片制成三维集成电路封装的插入件。

公开(公告)号：US08435804B2

公开(公告)日：2013-05-07

申请号：US13331915

申请日：2011-12-20

申请人： Adam Kell ,  Robert Clark-Phelps ,  Joseph D. Gillespie ,  Gopal Prabhu ,  Takao Sakase ,  Theodore H. Smick ,  Steve Zuniga ,  Steve Bababyan

发明人： Adam Kell ,  Robert Clark-Phelps ,  Joseph D. Gillespie ,  Gopal Prabhu ,  Takao Sakase ,  Theodore H. Smick ,  Steve Zuniga ,  Steve Bababyan

IPC分类号： H01L21/00 ,  H01L31/0224

CPC分类号： H01L31/0288 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6838 ,  H01L31/0747 ,  H01L31/1892 ,  Y02E10/50 ,  Y10T156/11 ,  Y10T156/1132

摘要： A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and separably contacting the donor body with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body, and a deforming force is applied to the lamina or to the donor body to separate the lamina from the donor body.

摘要翻译： 用于从施主体产生层的方法包括用离子剂量植入施主体，并将施主体与供体体和基座组件直接接触的基座组件分离接触。 薄片从供体体剥离，并且将变形力施加到椎板或施主体以将椎板与供体体分开。

公开(公告)号：US08257995B2

公开(公告)日：2012-09-04

申请号：US12636704

申请日：2009-12-11

申请人： Mohamed M Hilali ,  Venkatesan Murali ,  Gopal Prabhu ,  Zhiyong Li

发明人： Mohamed M Hilali ,  Venkatesan Murali ,  Gopal Prabhu ,  Zhiyong Li

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： H01L21/324 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. This damage can be repaired by annealing the lamina using microwave energy. If the lamina is bonded to a receiver element, the receiver element may be either transparent to microwaves, or may reflect microwaves, while the semiconductor material absorbs the microwaves. In this way the lamina can be annealed at high temperature while the receiver element remains cooler.

摘要翻译： 通过将离子注入到晶片中来限定半导体施主体中的解理平面。 从供体体上切下薄片，形成包含薄片的光伏电池。 植入物可能会对晶片的晶体结构造成一定的损害。 这种损伤可以通过使用微波能量退火层来修复。 如果薄片结合到接收器元件，接收器元件可以对微波是透明的，或者可以反射微波，同时半导体材料吸收微波。 以这种方式，层板可以在高温下退火，同时接收器元件保持冷却。

公开(公告)号：US20110143480A1

公开(公告)日：2011-06-16

申请号：US12636704

申请日：2009-12-11

申请人： Mohamed M. Hilali ,  Murali Venkatesan ,  Gopal Prabhu ,  Zhiyong Li

发明人： Mohamed M. Hilali ,  Murali Venkatesan ,  Gopal Prabhu ,  Zhiyong Li

IPC分类号： H01L21/322

CPC分类号： H01L21/324 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. This damage can be repaired by annealing the lamina using microwave energy. If the lamina is bonded to a receiver element, the receiver element may be either transparent to microwaves, or may reflect microwaves, while the semiconductor material absorbs the microwaves. In this way the lamina can be annealed at high temperature while the receiver element remains cooler.

摘要翻译： 通过将离子注入到晶片中来限定半导体施主体中的解理平面。 从供体体上切下薄片，形成包含薄片的光伏电池。 植入物可能会对晶片的晶体结构造成一定的损害。 这种损伤可以通过使用微波能量退火层来修复。 如果薄片结合到接收器元件，接收器元件可以对微波是透明的，或者可以反射微波，同时半导体材料吸收微波。 以这种方式，层板可以在高温下退火，同时接收器元件保持冷却。

公开(公告)号：US20100273329A1

公开(公告)日：2010-10-28

申请号：US12557379

申请日：2009-09-10

申请人： Gopal Prabhu ,  Kathy J. Jackson ,  Orion Leland ,  Aditya Agarwal

发明人： Gopal Prabhu ,  Kathy J. Jackson ,  Orion Leland ,  Aditya Agarwal

IPC分类号： H01L21/304

CPC分类号： H01L31/1896 ,  Y02E10/50

摘要： A donor wafer, for example of silicon, has an irregular surface following cleaving of a lamina from the surface, for example by exfoliation following implant of hydrogen and/or helium ions to define a cleave plane. Pinholes in the lamina leave column asperities at the exfoliated surface of the donor wafer, and the beveled edge may leave an edge asperity which fails to exfoliate. To prepare the surface of the donor wafer for reuse, mechanical grinding removes the column and edge asperities, and minimal additional thickness. Following cleaning, growth and removal of an oxide layer at the surface rounds remaining peaks. The smoothed surface is well adapted to bonding to a receiver element and exfoliation of a new lamina. A variety of devices may be fabricated from the lamina, for example a photovoltaic cell.

摘要翻译： 供体晶片，例如硅，在从表面切割层之后具有不规则表面，例如通过在氢和/或氦离子注入之后通过剥离来限定解理面。 晶片中的针孔在施主晶片的剥离表面处留下柱的粗糙度，并且斜边缘可能留下边缘粗糙，其不能脱落。 为了制备供体晶片的表面以便重新使用，机械研磨去除了柱和边缘粗糙度以及最小的附加厚度。 在清洁之后，在表面处生长和除去氧化物层留下剩余的峰。 平滑的表面很好地适应于接合元件的粘合和新的层的剥离。 可以从薄片制造各种装置，例如光伏电池。

公开(公告)号：US08871608B2

公开(公告)日：2014-10-28

申请号：US13425877

申请日：2012-03-21

申请人： Venkatesan Murali ,  Arvind Chari ,  Gopal Prabhu ,  Christopher J. Petti

发明人： Venkatesan Murali ,  Arvind Chari ,  Gopal Prabhu ,  Christopher J. Petti

IPC分类号： H01L31/0232

CPC分类号： H01L27/14632 ,  H01L21/6835 ,  H01L27/1464 ,  H01L27/14687 ,  H01L31/103 ,  H01L31/1896 ,  Y02E10/50

摘要： A method for fabricating a backside-illuminated sensor includes providing a thin film semiconductor lamina having a first conductivity, and forming a doped region having a second conductivity within the lamina and at a front surface of the lamina. The lamina may be provided as a free-standing lamina, or may be provided as a semiconductor donor body from which the lamina is cleaved. An electrical connection is formed to the doped region. A temporary carrier is contacted to the back surface of the semiconductor and later removed. A backside-illuminated sensor is fabricated from the semiconductor lamina, in which the thickness of the semiconductor lamina remains substantially unchanged during the fabrication process.

摘要翻译： 一种用于制造背面照射传感器的方法包括提供具有第一导电性的薄膜半导体薄片，以及在薄层内和薄片的前表面处形成具有第二导电性的掺杂区域。 层可以提供为独立的层，或者可以提供为半导体施主体，层从其中被切割。 与掺杂区形成电连接。 临时载体与半导体的后表面接触并稍后移除。 背面照明的传感器由半导体层制成，其中半导体层的厚度在制造过程中保持基本上不变。

公开(公告)号：US08841161B2

公开(公告)日：2014-09-23

申请号：US13366338

申请日：2012-02-05

申请人： Venkatesan Murali ,  Gopal Prabhu ,  Thomas Edward Dinan, Jr. ,  Orion Leland

发明人： Venkatesan Murali ,  Gopal Prabhu ,  Thomas Edward Dinan, Jr. ,  Orion Leland

IPC分类号： H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/0376 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

摘要： The invention provides for a semiconductor wafer with a metal support element suitable for the formation of a flexible or sag tolerant photovoltaic cell. A method for forming a photovoltaic cell may comprise providing a semiconductor wafer have a thickness greater than 150 μm, the wafer having a first surface and a second surface opposite the first and etching the semiconductor wafer a first time so that the first etching reduces the thickness of the semiconductor wafer to less than 150 μm. After the wafer has been etched a first time, a metal support element may be constructed on or over the first surface; and a photovoltaic cell may be fabricated, wherein the semiconductor wafer comprises the base of the photovoltaic cell.

摘要翻译： 本发明提供一种具有金属支撑元件的半导体晶片，该金属支撑元件适用于形成柔性或容忍光伏电池。 形成光伏电池的方法可以包括提供厚度大于150μm的半导体晶片，晶片具有第一表面和与第一表面相反的第二表面，并且首次蚀刻半导体晶片，使得第一蚀刻减小厚度 的半导体晶片至小于150μm。 在第一次蚀刻晶片之后，金属支撑元件可以构造在第一表面上或上面; 并且可以制造光伏电池，其中半导体晶片包括光伏电池的基极。

公开(公告)号：US20130200496A1

公开(公告)日：2013-08-08

申请号：US13558826

申请日：2012-07-26

申请人： Venkatesan Murali ,  Thomas Edward Dinan, JR. ,  Steve Bababyan ,  Gopal Prabhu

发明人： Venkatesan Murali ,  Thomas Edward Dinan, JR. ,  Steve Bababyan ,  Gopal Prabhu

IPC分类号： H01L21/30 ,  H01L29/02 ,  H01L21/20

CPC分类号： H01L21/84 ,  H01L31/1892 ,  Y02E10/50

摘要： The invention provides a method of forming an electronic device from a lamina that has a coefficient of thermal expansion that is matched or nearly matched to a constructed metal support. In some embodiments the method comprises implanting the top surface of a donor body with an ion dosage to form a cleave plane followed by exfoliating a lamina from the donor body. After exfoliating the lamina, a flexible metal support that has a coefficient of thermal expansion with a value that is within 10% of the value of the coefficient of thermal expansion of the lamina is constructed on the lamina. In some embodiments the coefficients of thermal expansion of the metal support and the lamina are within 10% or within 5% of each other between the temperatures of 100 and 600 ° C.

摘要翻译： 本发明提供了一种从薄片形成电子器件的方法，其具有与构造的金属支撑件匹配或接近匹配的热膨胀系数。 在一些实施方案中，该方法包括用离子剂量植入供体体的顶表面以形成切割平面，随后从供体体剥离薄片。 在剥离层之后，在层板上形成具有热膨胀系数为10％以内的层的热膨胀系数的柔性金属支撑体。 在一些实施例中，金属载体和薄层的热膨胀系数在100和600℃的温度之间彼此的10％或5％以内。

公开(公告)号：US20130199611A1

公开(公告)日：2013-08-08

申请号：US13366338

申请日：2012-02-05

申请人： Venkatesan Murali ,  Gopal Prabhu ,  Thomas Edward Dinan, JR. ,  Orion Leland

发明人： Venkatesan Murali ,  Gopal Prabhu ,  Thomas Edward Dinan, JR. ,  Orion Leland

IPC分类号： H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/0376 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

摘要： The invention provides for a semiconductor wafer with a metal support element suitable for the formation of a flexible or sag tolerant photovoltaic cell. A method for forming a photovoltaic cell may comprise providing a semiconductor wafer have a thickness greater than 150 μm, the wafer having a first surface and a second surface opposite the first and etching the semiconductor wafer a first time so that the first etching reduces the thickness of the semiconductor wafer to less than 150 μm. After the wafer has been etched a first time, a metal support element may be constructed on or over the first surface; and a photovoltaic cell may be fabricated, wherein the semiconductor wafer comprises the base of the photovoltaic cell.

摘要翻译： 本发明提供一种具有金属支撑元件的半导体晶片，该金属支撑元件适用于形成柔性或容忍光伏电池。 形成光伏电池的方法可以包括提供厚度大于150μm的半导体晶片，所述晶片具有第一表面和与第一表面相对的第二表面，并且第一次蚀刻半导体晶片，使得第一蚀刻减小厚度 的半导体晶片小于150μm。 在第一次蚀刻晶片之后，金属支撑元件可以构造在第一表面上或上面; 并且可以制造光伏电池，其中半导体晶片包括光伏电池的基极。