High mass resolution low aberration analyzer magnet for ribbon beams and the system for ribbon beam ion implanter
    51.
    发明授权
    High mass resolution low aberration analyzer magnet for ribbon beams and the system for ribbon beam ion implanter 失效
    用于带状光束的高质量分辨率低像差分析器磁体和用于带状束离子注入机的系统

    公开(公告)号:US08183539B2

    公开(公告)日:2012-05-22

    申请号:US12658679

    申请日:2010-02-12

    Abstract: The present invention provides a mass analyzing magnet which can bend a very wide charged particle ribbon beams through angles between 90 to 200 degrees. The shorter dimension of the ribbon beam is aligned with the magnetic field. The magnet can focus the longer dimension of the ribbon beam through a resolving slot inside the magnet for mass or momentum analysis. The magnet pole is shaped to increase the mass resolving power and to provide the focusing force in the direction of the shorter dimension of the ribbon beam. This magnet can achieve high mass resolving power with very small system aberrations for very wide ribbon beam. This feature is of significant value, for example, in the ion implantation industry. The ribbon beam width can be 300 mm, 450 mm and even 1000 mm. Integrated with the present invention, the ion implanter systems can be built to provide mass analyzed ribbon beams for various applications. The system will have much lower cost and much better ribbon beam quality than the ion implanters which are using conventional mass analyzing magnet.

    Abstract translation: 本发明提供一种质量分析磁体,其能够使非常宽的带电粒子束弯曲角度在90至200度之间。 带状束的较短尺寸与磁场对准。 磁体可以将带状光束的较长尺寸聚焦在磁体内的分辨槽以进行质量或动量分析。 磁极被成形为增加质量分辨能力并且提供在带状束的较短尺寸方向上的聚焦力。 该磁体可以实现高质量分辨率功率,对于非常宽的带状束具有非常小的系统像差。 这个特征具有重要价值,例如在离子注入工业中。 带束宽度可以是300mm,450mm甚至1000mm。 与本发明相结合,可以构建离子注入机系统以提供用于各种应用的质量分析的带状束。 与使用常规质量分析磁体的离子注入机相比,该系统将具有更低的成本和更好的带束质量。

    UNIFORMITY CONTROL USING ION BEAM BLOCKERS
    52.
    发明申请
    UNIFORMITY CONTROL USING ION BEAM BLOCKERS 审中-公开
    使用离子束屏障的均匀控制

    公开(公告)号:US20120056107A1

    公开(公告)日:2012-03-08

    申请号:US12877715

    申请日:2010-09-08

    Abstract: An ion beam is generated and the energy of this ion beam is changed from a first energy to a second energy through, for example, acceleration or deceleration. A portion of the ion beam is blocked after the energy is changed and the ion beam is implanted into a workpiece. A plurality of blockers may be used to block the beam. Each blocker may be attached to a drive unit configured to translate one of the blockers in a first direction.

    Abstract translation: 产生离子束,并且该离子束的能量通过例如加速或减速从第一能量改变为第二能量。 在能量改变之后,离子束的一部分被阻挡并且将离子束注入到工件中。 可以使用多个阻挡器来阻挡梁。 每个阻断器可以附接到驱动单元,该驱动单元被配置成在第一方向上平移一个阻断器。

    Detector System for Use with Transmission Electron Microscope Spectroscopy
    53.
    发明申请
    Detector System for Use with Transmission Electron Microscope Spectroscopy 有权
    用于透射电子显微镜光谱的检测器系统

    公开(公告)号:US20120049060A1

    公开(公告)日:2012-03-01

    申请号:US13217013

    申请日:2011-08-24

    Abstract: A detector system for a transmission electron microscope includes a first detector for recording a pattern and a second detector for recording a position of a feature of the pattern. The second detector is preferably a position sensitive detector that provides accurate, rapid position information that can be used as feedback to stabilize the position of the pattern on the first detector. In one embodiment, the first detector detects an electron energy loss electron spectrum, and the second detector, positioned behind the first detector and detecting electrons that pass through the first detector, detects the position of the zero-loss peak and adjusts the electron path to stabilize the position of the spectrum on the first detector.

    Abstract translation: 用于透射电子显微镜的检测器系统包括用于记录图案的第一检测器和用于记录图案的特征位置的第二检测器。 第二检测器优选地是位置敏感检测器,其提供精确,快速的位置信息,其可以用作反馈以稳定图案在第一检测器上的位置。 在一个实施例中,第一检测器检测电子能量损失电子光谱,并且第二检测器位于第一检测器后面并检测通过第一检测器的电子,检测零损耗峰值的位置并调整电子通路 稳定第一检测器上的光谱位置。

    Post-decel magnetic energy filter for ion implantation systems
    54.
    发明授权
    Post-decel magnetic energy filter for ion implantation systems 有权
    用于离子注入系统的减速磁能过滤器

    公开(公告)号:US08124946B2

    公开(公告)日:2012-02-28

    申请号:US12477631

    申请日:2009-06-03

    Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

    Abstract translation: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法,其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析,其中选择离子。 一旦离子束被质量分析,离子束然后通过减速器减速,并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供,其中形成磁场以截取离开减速器的离子束中的离子,以选择性地过滤不需要的离子和快速中性粒子。

    Scanning electron microscope having a monochromator
    56.
    发明授权
    Scanning electron microscope having a monochromator 有权
    具有单色仪的扫描电子显微镜

    公开(公告)号:US08067733B2

    公开(公告)日:2011-11-29

    申请号:US12604923

    申请日:2009-10-23

    Abstract: A scanning electron microscope having a monochromator that can automatically adjust an electron beam entering the monochromator and operating conditions of the monochromator. The scanning electron microscope having a monochromator is equipped with, between an electron source and the monochromator, a first focusing lens for adjusting focusing of the electron beam entering the monochromator and a first astigmatism correcting lens for correcting astigmatism of the electron beam entering the monochromator. The microscope further includes a means of obtaining an image of an electron-beam adjustment sample disposed where the electron beam in the monochromator is focused, and based on the obtained image, driving the first focusing lens and the first astigmatism correcting lens so that the focusing and astigmatism of the electron beam entering the monochromator are adjusted.

    Abstract translation: 具有可自动调节进入单色仪的电子束和单色仪的操作条件的单色仪的扫描电子显微镜。 具有单色仪的扫描电子显微镜在电子源和单色仪之间配备有用于调节进入单色仪的电子束的聚焦的第一聚焦透镜和用于校正进入单色仪的电子束的像散的第一散光校正透镜。 显微镜还包括获得设置在单色仪中的电子束被聚焦的电子束调节样本的图像的装置,并且基于获得的图像,驱动第一聚焦透镜和第一散光校正透镜,使得聚焦 并且调节进入单色仪的电子束的散光。

    Projection electron beam apparatus and defect inspection system using the apparatus
    57.
    发明授权
    Projection electron beam apparatus and defect inspection system using the apparatus 有权
    投影电子束装置和使用该装置的缺陷检查系统

    公开(公告)号:US08035082B2

    公开(公告)日:2011-10-11

    申请号:US12580505

    申请日:2009-10-16

    CPC classification number: G01N23/2251 H01J37/05 H01J37/28 H01J2237/057

    Abstract: A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun 1 are irradiated onto a sample 7 through a primary electro-optical system, and electrons consequently emitted from the sample are detected by a detector 12 through a secondary electro-optical system. A Wien filter 8 comprising a multi-pole lens for correcting axial chromatic aberration is disposed between a magnification lens 10 in the secondary electro-optical system and a beam separator 5 for separating a primary electron beam and a secondary electron beam, for correcting axial chromatic aberration caused by an objective lens 14 which comprises an electromagnetic lens having a magnetic gap defined on a sample side.

    Abstract translation: 通过减少轴向色差并增加二次电子的透射率,以高产量来评估样品。 从电子枪1发射的电子束通过初级电光系统照射到样品7上,由检测器12通过次级电光学系统检测从样品发射的电子。 包括用于校正轴向色差的多极透镜的维恩滤波器8设置在二次电光学系统中的放大透镜10和用于分离一次电子束和二次电子束的光束分离器5之间,用于校正轴向色度 由物镜14引起的像差包括具有限定在样品侧的磁隙的电磁透镜。

    Ion implantation apparatus and a method
    59.
    发明授权
    Ion implantation apparatus and a method 有权
    离子注入装置及方法

    公开(公告)号:US07989784B2

    公开(公告)日:2011-08-02

    申请号:US12494270

    申请日:2009-06-30

    Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

    Abstract translation: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生,提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正,以补偿从轮轴的径向距离对晶片的一部分通过带状束的速度的依赖性。

    Ion implanting apparatus
    60.
    发明授权
    Ion implanting apparatus 有权
    离子注入装置

    公开(公告)号:US07964856B2

    公开(公告)日:2011-06-21

    申请号:US12294674

    申请日:2007-03-27

    Abstract: In an ion implanting apparatus 10 including a separation slit 20 which receives an ion beam 1 having passed through a mass-separation electromagnet 17 and allows a desired type of ion to selectively pass therethrough, the separation slit 20 is operable to vary a shape of a gap through which the ion beam 1 passes. In addition, the ion implanting apparatus 10 includes a variable slit 30 which is disposed between an extraction electrode system 15 and the mass-separation electromagnet 17 so as to form a gap through which the ion beam 1 passes and is operable to vary a shape of the gap so as to shield a part of the ion beam 1 extracted from the ion source 12. The ion implanting apparatus 10 may include both or one of the separation slit 20 and the variable slit 30.

    Abstract translation: 在包括分离狭缝20的离子注入装置10中,分离狭缝20接收已经通过质量分离电磁体17并允许期望类型的离子选择性地通过的离子束1,分离狭缝20可操作以改变形状 离子束1通过的间隙。 此外,离子注入装置10包括可变狭缝30,其设置在提取电极系统15和质量分离电磁体17之间,以形成离子束1通过的间隙,并且可操作地改变形状 间隙,以便屏蔽从离子源12提取的离子束1的一部分。离子注入装置10可以包括分离狭缝20和可变狭缝30中的两个或一个。

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