Abstract:
The present invention provides a mass analyzing magnet which can bend a very wide charged particle ribbon beams through angles between 90 to 200 degrees. The shorter dimension of the ribbon beam is aligned with the magnetic field. The magnet can focus the longer dimension of the ribbon beam through a resolving slot inside the magnet for mass or momentum analysis. The magnet pole is shaped to increase the mass resolving power and to provide the focusing force in the direction of the shorter dimension of the ribbon beam. This magnet can achieve high mass resolving power with very small system aberrations for very wide ribbon beam. This feature is of significant value, for example, in the ion implantation industry. The ribbon beam width can be 300 mm, 450 mm and even 1000 mm. Integrated with the present invention, the ion implanter systems can be built to provide mass analyzed ribbon beams for various applications. The system will have much lower cost and much better ribbon beam quality than the ion implanters which are using conventional mass analyzing magnet.
Abstract:
An ion beam is generated and the energy of this ion beam is changed from a first energy to a second energy through, for example, acceleration or deceleration. A portion of the ion beam is blocked after the energy is changed and the ion beam is implanted into a workpiece. A plurality of blockers may be used to block the beam. Each blocker may be attached to a drive unit configured to translate one of the blockers in a first direction.
Abstract:
A detector system for a transmission electron microscope includes a first detector for recording a pattern and a second detector for recording a position of a feature of the pattern. The second detector is preferably a position sensitive detector that provides accurate, rapid position information that can be used as feedback to stabilize the position of the pattern on the first detector. In one embodiment, the first detector detects an electron energy loss electron spectrum, and the second detector, positioned behind the first detector and detecting electrons that pass through the first detector, detects the position of the zero-loss peak and adjusts the electron path to stabilize the position of the spectrum on the first detector.
Abstract:
A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.
Abstract:
The invention provides for a method of improving bioactivity of a surface of an implantable object. The invention also provides for a method of improving bioactivity of a surface of biological laboratory ware. The invention further provides a method of attaching cells to an object. The invention even further provides for a method of preparing an object for medical implantation. The invention also provides for an article with attached cell, and for an article for medical implantation. Improvements result from the application of gas-cluster ion beam technology and from the application of neutral beam technology, wherein neutral beams are derived from accelerated gas-cluster ion beams.
Abstract:
A scanning electron microscope having a monochromator that can automatically adjust an electron beam entering the monochromator and operating conditions of the monochromator. The scanning electron microscope having a monochromator is equipped with, between an electron source and the monochromator, a first focusing lens for adjusting focusing of the electron beam entering the monochromator and a first astigmatism correcting lens for correcting astigmatism of the electron beam entering the monochromator. The microscope further includes a means of obtaining an image of an electron-beam adjustment sample disposed where the electron beam in the monochromator is focused, and based on the obtained image, driving the first focusing lens and the first astigmatism correcting lens so that the focusing and astigmatism of the electron beam entering the monochromator are adjusted.
Abstract:
A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun 1 are irradiated onto a sample 7 through a primary electro-optical system, and electrons consequently emitted from the sample are detected by a detector 12 through a secondary electro-optical system. A Wien filter 8 comprising a multi-pole lens for correcting axial chromatic aberration is disposed between a magnification lens 10 in the secondary electro-optical system and a beam separator 5 for separating a primary electron beam and a secondary electron beam, for correcting axial chromatic aberration caused by an objective lens 14 which comprises an electromagnetic lens having a magnetic gap defined on a sample side.
Abstract:
There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
Abstract:
A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.
Abstract:
In an ion implanting apparatus 10 including a separation slit 20 which receives an ion beam 1 having passed through a mass-separation electromagnet 17 and allows a desired type of ion to selectively pass therethrough, the separation slit 20 is operable to vary a shape of a gap through which the ion beam 1 passes. In addition, the ion implanting apparatus 10 includes a variable slit 30 which is disposed between an extraction electrode system 15 and the mass-separation electromagnet 17 so as to form a gap through which the ion beam 1 passes and is operable to vary a shape of the gap so as to shield a part of the ion beam 1 extracted from the ion source 12. The ion implanting apparatus 10 may include both or one of the separation slit 20 and the variable slit 30.