公开(公告)号：US07964856B2

公开(公告)日：2011-06-21

申请号：US12294674

申请日：2007-03-27

申请人： Ichiro Nakamoto ,  Hiroshi Horai ,  Tatsuya Sodekoda ,  Masahiro Yoshida

发明人： Ichiro Nakamoto ,  Hiroshi Horai ,  Tatsuya Sodekoda ,  Masahiro Yoshida

IPC分类号： G21K5/10

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0455 ,  H01J2237/057 ,  H01L21/265

摘要： In an ion implanting apparatus 10 including a separation slit 20 which receives an ion beam 1 having passed through a mass-separation electromagnet 17 and allows a desired type of ion to selectively pass therethrough, the separation slit 20 is operable to vary a shape of a gap through which the ion beam 1 passes. In addition, the ion implanting apparatus 10 includes a variable slit 30 which is disposed between an extraction electrode system 15 and the mass-separation electromagnet 17 so as to form a gap through which the ion beam 1 passes and is operable to vary a shape of the gap so as to shield a part of the ion beam 1 extracted from the ion source 12. The ion implanting apparatus 10 may include both or one of the separation slit 20 and the variable slit 30.

摘要翻译： 在包括分离狭缝20的离子注入装置10中，分离狭缝20接收已经通过质量分离电磁体17并允许期望类型的离子选择性地通过的离子束1，分离狭缝20可操作以改变形状 离子束1通过的间隙。 此外，离子注入装置10包括可变狭缝30，其设置在提取电极系统15和质量分离电磁体17之间，以形成离子束1通过的间隙，并且可操作地改变形状 间隙，以便屏蔽从离子源12提取的离子束1的一部分。离子注入装置10可以包括分离狭缝20和可变狭缝30中的两个或一个。

公开(公告)号：US20100171048A1

公开(公告)日：2010-07-08

申请号：US12294674

申请日：2007-03-27

申请人： Ichiro Nakamoto ,  Hiroshi Horai ,  Tatsuya Sodekoda ,  Masahiro Yoshida

发明人： Ichiro Nakamoto ,  Hiroshi Horai ,  Tatsuya Sodekoda ,  Masahiro Yoshida

IPC分类号： H01J37/08 ,  H01J37/05 ,  H01J37/30

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0455 ,  H01J2237/057 ,  H01L21/265

摘要： In an ion implanting apparatus 10 including a separation slit 20 which receives an ion beam 1 having passed through a mass-separation electromagnet 17 and allows a desired type of ion to selectively pass therethrough, the separation slit 20 is operable to vary a shape of a gap through which the ion beam 1 passes. In addition, the ion implanting apparatus 10 includes a variable slit 30 which is disposed between an extraction electrode system 15 and the mass-separation electromagnet 17 so as to form a gap through which the ion beam 1 passes and is operable to vary a shape of the gap so as to shield a part of the ion beam 1 extracted from the ion source 12. The ion implanting apparatus 10 may include both or one of the separation slit 20 and the variable slit 30.

摘要翻译： 在包括分离狭缝20的离子注入装置10中，分离狭缝20接收已经通过质量分离电磁体17并允许期望类型的离子选择性地通过的离子束1，分离狭缝20可操作以改变形状 离子束1通过的间隙。 此外，离子注入装置10包括可变狭缝30，其设置在提取电极系统15和质量分离电磁体17之间，以形成离子束1通过的间隙，并且可操作地改变形状 间隙，以便屏蔽从离子源12提取的离子束1的一部分。离子注入装置10可以包括分离狭缝20和可变狭缝30中的两个或一个。