Electron beam apparatus and an aberration correction optical apparatus
    1.
    发明授权
    Electron beam apparatus and an aberration correction optical apparatus 有权
    电子束装置和像差校正光学装置

    公开(公告)号:US07863580B2

    公开(公告)日:2011-01-04

    申请号:US11760235

    申请日:2007-06-08

    IPC分类号: G21K1/08 H01J3/14 H01J3/26

    摘要: An electron beam apparatus for providing an evaluation of a sample, such as a semiconductor wafer, that includes a micro-pattern with a minimum line width not greater than 0.1 μm with high throughput. A primary electron beam generated by an electron gun is irradiated onto a sample and secondary electrons emanating from the sample are formed into an image on a detector by an image projection optical system. An electron gun 61 has a cathode 1 and a drawing electrode 3, and an electron emission surface 1a of the cathode defines a concave surface. The drawing electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a ¼ plane position and a ¾ plane position, respectively, along an object plane-image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an intermediate image-formation plane position and an image plane position, respectively, in the aberration correction optical apparatus.

    摘要翻译: 一种用于提供诸如半导体晶片的样品的评估的电子束装置,其包括具有不大于0.1μm的最小线宽的微图案,具有高生产量。 由电子枪产生的一次电子束照射在样品上,从样品发出的二次电子通过图像投影光学系统形成检测器上的图像。 电子枪61具有阴极1和牵伸电极3,阴极的电子发射表面1a限定凹面。 拉制电极3具有由与阴极的电子发射表面1a相对的第二球体的局部外表面和由电子通过凸面形成的孔73构成的凸面3a。 像差校正光学装置包括两个相同尺寸的多极维纳滤光器,其布置成使得它们的中心分别沿着像差校正光学装置中的物平面图像平面段与¼平面位置和¾平面位置对准, 以及分别设置在像差校正光学装置中的物平面位置,中间图像形成面位置和像面位置的具有双向焦点的光学元件。

    Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device
    2.
    发明申请
    Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device 有权
    基板检查装置,基板检查方法及制造半导体装置的方法

    公开(公告)号:US20090072139A1

    公开(公告)日:2009-03-19

    申请号:US12289846

    申请日:2008-11-05

    IPC分类号: G01N23/00

    CPC分类号: H01J37/28 H01J2237/2817

    摘要: A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.

    摘要翻译: 基板检查装置包括:电子束照射装置,其发射电子束并使电子束照射待检查的基板作为主光束; 电子束检测器,其检测从已经被电子束照射的衬底产生的二次电子,反射电子和反向散射电子中的至少一个,并输出形成一维或二维的信号, 基板的表面的三维图像; 映射投影光学系统,其将二次电子,反射电子和背散射电子中的至少一个成像在电子束检测器上作为次级光束; 以及电磁波照射装置,其产生电磁波,并使电磁波照射到产生二次光束的基板的表面上的位置。

    Substrate Inspection Apparatus, Substrate Inspection Method and Semiconductor Device Manufacturing Method
    4.
    发明申请
    Substrate Inspection Apparatus, Substrate Inspection Method and Semiconductor Device Manufacturing Method 有权
    基板检测装置,基板检查方法和半导体装置制造方法

    公开(公告)号:US20080231856A1

    公开(公告)日:2008-09-25

    申请号:US12053174

    申请日:2008-03-21

    申请人: Ichirota NAGAHAMA

    发明人: Ichirota NAGAHAMA

    IPC分类号: G01B11/00 H01L21/66

    摘要: A substrate inspection method includes forming a conductive thin film on a surface of an inspection target substrate with a pattern formed thereon, generating an electron beam and irradiating the substrate having the thin film formed thereon with the electron beam, detecting at least any of secondary electrons, reflected electrons and backscattered electrons released from the surface of the substrate and outputting signals constituting an inspection image, and selecting at least any of a material, a film thickness and a configuration for the thin film, or at least any of a material, a film thickness and a configuration for the thin film and an irradiation condition with the electron beam according to an arbitrary inspection image characteristic so that an inspection image according to an inspection purpose can be obtained.

    摘要翻译: 基板检查方法包括:在其上形成图案的检查对象基板的表面上形成导电性薄膜,产生电子束,并对其上形成有薄膜的基板照射电子束,检测二次电子中的至少一种 ,从基板的表面释放的反射电子和反向散射电子,并输出构成检查图像的信号,并且选择薄膜的材料,膜厚度和结构中的至少任一种,或者至少选择材料, 膜厚度和薄膜的结构以及根据任意检查图像特性的电子束的照射条件,从而可以获得根据检查目的的检查图像。

    Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method
    7.
    发明申请
    Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method 失效
    基板检查装置,基板检查方法及半导体装置的制造方法

    公开(公告)号:US20070194232A1

    公开(公告)日:2007-08-23

    申请号:US11698132

    申请日:2007-01-26

    IPC分类号: G21K7/00

    摘要: A substrate inspection apparatus includes: an electron gun which generates an electron beam to irradiate the electron beam to a substrate; an electron detection unit which detects at least one of a secondary electron, a reflection electron and a back scattering electron generated from a surface of the substrate by the irradiation of the electron beam to output signals constituting an image showing a state of the substrate surface; and a surface potential uniformizing unit which generates ions, and irradiates the ions to the substrate before the irradiation of the electron beam to uniformize a surface potential of the substrate.

    摘要翻译: 基板检查装置包括:电子枪,其产生电子束以将电子束照射到基板; 电子检测单元,其通过电子束的照射检测从基板的表面产生的二次电子,反射电子和背散射电子中的至少一个,以输出构成表示基板表面的状态的图像的信号; 以及产生离子的表面电位均匀化单元,并且在照射电子束之前将离子照射到基板上以使基板的表面电位均匀化。

    Electron beam apparatus and device manufacturing method using same
    9.
    发明授权
    Electron beam apparatus and device manufacturing method using same 有权
    电子束装置及其制造方法

    公开(公告)号:US06909092B2

    公开(公告)日:2005-06-21

    申请号:US10437889

    申请日:2003-05-15

    摘要: A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.

    摘要翻译: 提供了一种缺陷检查装置,用于产生较小失真的测试图像,以可靠地观察用于检测缺陷的样品表面。 缺陷检测装置包括用于照射样品的一次电子束源,用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜,用于检测二次电子的检测器,以及用于处理的图像处理单元 来自检测器的信号。 此外,可以提供第二电子源用于发射照射到样品的电子束,其中在用来自第一电子源的一次电子束照射之前,可以用来自第二电子源的电子束照射样品,用于观察 例子。 还提供了一种装置制造方法,用于使用缺陷检测装置以高吞吐量检查处理装置。

    Pattern inspection method and pattern inspection apparatus
    10.
    发明授权
    Pattern inspection method and pattern inspection apparatus 有权
    图案检验方法和图案检验装置

    公开(公告)号:US08611638B2

    公开(公告)日:2013-12-17

    申请号:US13014226

    申请日:2011-01-26

    申请人: Ichirota Nagahama

    发明人: Ichirota Nagahama

    IPC分类号: G06K9/00

    摘要: According to an embodiment, a pattern inspection apparatus includes an imaging unit, a defect detection unit, and an inspection control unit. The imaging unit is configured to image a pattern on a substrate to acquire a pattern image. The defect detection unit is configured to detect a defect of the pattern by a first outer shape comparison in associate with the pattern image and design information for the pattern or by a comparison in pixel values between images of patterns designed to be formed into the same shape in the substrate. The inspection control unit is configured to select an inspection based on the amount of the defect detected by the first outer shape comparison or based on a value of a gradient of an edge profile of the pattern image and to control the imaging unit and the defect detection unit in accordance with the selected inspection.

    摘要翻译: 根据实施例,图案检查装置包括成像单元,缺陷检测单元和检查控制单元。 成像单元被配置为对基板上的图案进行成像以获取图案图像。 缺陷检测单元被配置为通过与图案图像相关联的第一外部形状比较和图案的设计信息或通过设计成形成相同形状的图案的图像之间的像素值的比较来检测图案的缺陷 在基材中。 检查控制单元被配置为基于由第一外部形状比较检测到的缺陷的量或者基于图案图像的边缘轮廓的梯度的值来选择检查,并且控制成像单元和缺陷检测 单位按照选定的检验。