摘要:
The present invention provides an electron optical lens column suitable for miniaturization, and provides the manufacturing method thereof. The column unit (1) comprises an inner column (11) and an outer column (12). The column unit is, as a whole, structured from a high-resistance electrically conductive ceramic. Electrostatic lenses (21, 22, 23, and 24) are affixed to the inner surface (111) of the inner column using a means such as plating or vapor deposition. Of the electrodes or electrode parts (211–213, 221, 231, 232, and 241–243) from which the lens is structured, those that share the same electric potential are connected by shared interconnections. This makes it possible to connect all of the electrodes or electrode parts with shared electric potentials as a group to the external interconnections.
摘要:
The present invention provides an electron optical lens column suitable for miniaturization, and provides the manufacturing method thereof. The column unit (1) comprises an inner column (11) and an outer column (12). The column unit is, as a whole, structured from a high-resistance electrically conductive ceramic. Electrostatic lenses (21, 22, 23, and 24) are affixed to the inner surface (111) of the inner column using a means such as plating or vapor deposition. Of the electrodes or electrode parts (211-213, 221, 231, 232, and 241-243) from which the lens is structured, those that share the same electric potential are connected by shared interconnections. This makes it possible to connect all of the electrodes or electrode parts with shared electric potentials as a group to the external interconnections.
摘要:
A host computer controlling a secondary optical system under such an image focusing condition that secondary beams obtained from an arbitrary region on a substrate form an image on a MCP detector, in accordance with a correlation between a state of the substrate and an energy of the secondary electrons and the reflected electrons upon the secondary optical system, in which the energy of the secondary electron beams is various depending on the state of the substrate. The host computer also measures quantitatively a physical and/or chemical characteristic of the substrate on a basis of the image focusing condition and the image signals.
摘要:
In an operation of a pattern dimension measuring system comprising a stage, an electron gun part, electron lens systems for scanning electron beam on a sample and having a MOL mechanism thereto, a secondary electron detector for detecting secondary electrons and so forth emitted from the sample, and a host computer having a pattern dimension measuring part, the stage is moved at a constant velocity, the coordinates of the stage is measured by a laser interferometer in real time, the variation in working distance of the electron beam is measured in real time by the optical lever system from a focal length measuring part to be fed back to a stage control part and an objective lens. When a pattern serving as an object to be measured reaches a region capable of scanning, the electron beam is scanned in the best focus while moving the scanning start position of the electron beam in synchronism with the constant velocity movement of the stage, so that the SEM image thereof is acquired.
摘要:
A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.
摘要:
In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical permanent magnets (57, 58) disposed coaxially with an optical axis (52) of the electron gun (51) in such a way as to sandwich a cylindrical ion pump anode (61) of the coaxial ion pump; the two permanent magnets are magnetized in a mutually opposing direction; a hollow cylindrical yoke (60) is disposed also coaxially with the optical axis (52) in such a way as to enclose the two permanent magnets (57, 58) within a hollow portion thereof; and the yoke (60) is formed with an annular yoke gap (63) in a radially inner circumferential surface of the yoke (60) to leak out a magnetic flux flowing through the yoke toward the optical axis. In the above-mentioned construction, the magnetic field lens can be formed efficiently with the use of the magnetic field generated by the permanent magnets for constituting the coaxial ion pump, and further the formed magnetic field lens can be superimposed upon the electron gun. Therefore, an electric field immersion type electron gun of high performance can be obtained, and further the electron gun chamber can be efficiently evacuated in the vicinity of the cathode tip of the electron gun.
摘要:
An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape.A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.
摘要:
An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape. A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.
摘要:
To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要:
This invention concerns a method and an apparatus for measuring and testing the electric characteristic of a semiconductor device in a non-contact fashion. For conducting measurement and testing in a non-contact fashion, an electron beam is used to induce a voltage, on a semiconductor device which is an object to be tested (an object to be measured.) By changes with lapse of time of the induced voltage, the electric characteristic, of the semiconductor device are determined. Thus, an electron beam is irradiated to an object to be tested to induce a voltage thereafter to examine changes in the induced voltage. Then, the electric characteristic of the semiconductor device is measured and tested from the voltage thus induced and the voltage measured thereafter.