Electronic optical lens barrel and production method therefor
    1.
    发明授权
    Electronic optical lens barrel and production method therefor 失效
    电子光学镜筒及其制作方法

    公开(公告)号:US07193221B2

    公开(公告)日:2007-03-20

    申请号:US10516827

    申请日:2003-06-10

    IPC分类号: H01J3/26 H01J3/14 G21K1/08

    摘要: The present invention provides an electron optical lens column suitable for miniaturization, and provides the manufacturing method thereof. The column unit (1) comprises an inner column (11) and an outer column (12). The column unit is, as a whole, structured from a high-resistance electrically conductive ceramic. Electrostatic lenses (21, 22, 23, and 24) are affixed to the inner surface (111) of the inner column using a means such as plating or vapor deposition. Of the electrodes or electrode parts (211–213, 221, 231, 232, and 241–243) from which the lens is structured, those that share the same electric potential are connected by shared interconnections. This makes it possible to connect all of the electrodes or electrode parts with shared electric potentials as a group to the external interconnections.

    摘要翻译: 本发明提供一种适用于小型化的电子光学透镜柱,并提供其制造方法。 柱单元(1)包括内柱(11)和外柱(12)。 作为一个整体,柱单元由高电阻导电陶瓷构成。 静电透镜(21,22,23和24)使用电镀或气相沉积等方法固定在内柱的内表面(111)上。 在透镜构成的电极或电极部分(211-213,221,231,232和241-243)中,共享相同电位的电极或电极部分通过共享互连连接。 这使得可以将作为一组的共享电位的所有电极或电极部分连接到外部互连。

    Electronic optical lens barrel and production method therefor
    2.
    发明申请
    Electronic optical lens barrel and production method therefor 失效
    电子光学镜筒及其制作方法

    公开(公告)号:US20050173649A1

    公开(公告)日:2005-08-11

    申请号:US10516827

    申请日:2003-06-10

    摘要: The present invention provides an electron optical lens column suitable for miniaturization, and provides the manufacturing method thereof. The column unit (1) comprises an inner column (11) and an outer column (12). The column unit is, as a whole, structured from a high-resistance electrically conductive ceramic. Electrostatic lenses (21, 22, 23, and 24) are affixed to the inner surface (111) of the inner column using a means such as plating or vapor deposition. Of the electrodes or electrode parts (211-213, 221, 231, 232, and 241-243) from which the lens is structured, those that share the same electric potential are connected by shared interconnections. This makes it possible to connect all of the electrodes or electrode parts with shared electric potentials as a group to the external interconnections.

    摘要翻译: 本发明提供一种适用于小型化的电子光学透镜柱,并提供其制造方法。 柱单元(1)包括内柱(11)和外柱(12)。 作为一个整体,柱单元由高电阻导电陶瓷构成。 静电透镜(21,22,23和24)使用电镀或气相沉积等方法固定在内柱的内表面(111)上。 在透镜构成的电极或电极部分(211-213,221,231,232和241-243)中,共享相同电位的电极或电极部分通过共用互连连接。 这使得可以将作为一组的共享电位的所有电极或电极部分连接到外部互连。

    Substrate inspecting system using electron beam and substrate inspecting method using electron beam
    3.
    发明授权
    Substrate inspecting system using electron beam and substrate inspecting method using electron beam 有权
    使用电子束的基板检查系统和使用电子束的基板检查方法

    公开(公告)号:US06563114B1

    公开(公告)日:2003-05-13

    申请号:US09518096

    申请日:2000-03-03

    IPC分类号: H01J37145

    摘要: A host computer controlling a secondary optical system under such an image focusing condition that secondary beams obtained from an arbitrary region on a substrate form an image on a MCP detector, in accordance with a correlation between a state of the substrate and an energy of the secondary electrons and the reflected electrons upon the secondary optical system, in which the energy of the secondary electron beams is various depending on the state of the substrate. The host computer also measures quantitatively a physical and/or chemical characteristic of the substrate on a basis of the image focusing condition and the image signals.

    摘要翻译: 在这样的图像聚焦条件下控制二次光学系统的主计算机,其中从基板上的任意区域获得的次级光束在MCP检测器上形成图像,根据基板的状态和次级的能量之间的相关性 电子和二次光学系统上的反射电子,其中二次电子束的能量取决于衬底的状态而不同。 主计算机还基于图像聚焦条件和图像信号定量地测量基板的物理和/或化学特性。

    Pattern dimension measuring system and pattern dimension measuring method
    4.
    发明授权
    Pattern dimension measuring system and pattern dimension measuring method 失效
    图案尺寸测量系统和图案尺寸测量方法

    公开(公告)号:US06515296B1

    公开(公告)日:2003-02-04

    申请号:US09570538

    申请日:2000-05-12

    IPC分类号: G01N2300

    CPC分类号: G01N23/225

    摘要: In an operation of a pattern dimension measuring system comprising a stage, an electron gun part, electron lens systems for scanning electron beam on a sample and having a MOL mechanism thereto, a secondary electron detector for detecting secondary electrons and so forth emitted from the sample, and a host computer having a pattern dimension measuring part, the stage is moved at a constant velocity, the coordinates of the stage is measured by a laser interferometer in real time, the variation in working distance of the electron beam is measured in real time by the optical lever system from a focal length measuring part to be fed back to a stage control part and an objective lens. When a pattern serving as an object to be measured reaches a region capable of scanning, the electron beam is scanned in the best focus while moving the scanning start position of the electron beam in synchronism with the constant velocity movement of the stage, so that the SEM image thereof is acquired.

    摘要翻译: 在包括阶段,电子枪部分,用于在样品上扫描电子束并具有MOL机制的电子透镜系统的图案尺寸测量系统的操作中,用于检测从样品发射的二次电子等的二次电子检测器 和具有图形尺寸测量部件的主机,以等速移动平台,通过激光干涉仪实时测量舞台的坐标,实时测量电子束的工作距离的变化 通过光学杆系统从焦距测量部分反馈到舞台控制部分和物镜。 当作为被测量物体的图案到达能够扫描的区域时,电子束以最佳聚焦扫描,同时与舞台的等速运动同步地移动电子束的扫描开始位置, 获取其SEM图像。

    Plasma apparatus
    5.
    发明授权
    Plasma apparatus 失效
    等离子体仪器

    公开(公告)号:US5639308A

    公开(公告)日:1997-06-17

    申请号:US552673

    申请日:1995-11-03

    摘要: A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.

    摘要翻译: 等离子体装置通过将电子束引入填充有用于用引入的电子束照射反应性气体的反应气体的处理室来产生等离子体,以通过产生的等离子体处理物质。 等离子体装置具有用于安装待处理物质的样品基底,使得物质的处理表面不指向与引入处理室的电子束的行进方向垂直的方向; 用于抑制引入到处理室中的电子束的发散的抑制部分; 以及用于控制发散抑制电子束的电流密度分布的控制部分,使得包含在等离子体中的离子的电流密度分布能够对被处理物质均匀化。

    Magnetic field immersion type electron gun
    6.
    发明授权
    Magnetic field immersion type electron gun 失效
    磁场浸入式电子枪

    公开(公告)号:US5548183A

    公开(公告)日:1996-08-20

    申请号:US364747

    申请日:1994-12-27

    摘要: In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical permanent magnets (57, 58) disposed coaxially with an optical axis (52) of the electron gun (51) in such a way as to sandwich a cylindrical ion pump anode (61) of the coaxial ion pump; the two permanent magnets are magnetized in a mutually opposing direction; a hollow cylindrical yoke (60) is disposed also coaxially with the optical axis (52) in such a way as to enclose the two permanent magnets (57, 58) within a hollow portion thereof; and the yoke (60) is formed with an annular yoke gap (63) in a radially inner circumferential surface of the yoke (60) to leak out a magnetic flux flowing through the yoke toward the optical axis. In the above-mentioned construction, the magnetic field lens can be formed efficiently with the use of the magnetic field generated by the permanent magnets for constituting the coaxial ion pump, and further the formed magnetic field lens can be superimposed upon the electron gun. Therefore, an electric field immersion type electron gun of high performance can be obtained, and further the electron gun chamber can be efficiently evacuated in the vicinity of the cathode tip of the electron gun.

    摘要翻译: 在使用电镜(56)和同轴离子泵的永磁体(57,58)形成的磁场透镜的电磁枪(51)发射的电子束的磁场浸渍型电子枪中, (53)中,离子泵磁体是与电子枪(51)的光轴(52)同轴配置的一对筒状的永久磁铁(57,58),夹着圆筒状离子泵阳极 )的同轴离子泵; 两个永磁体在相互相反的方向被磁化; 中空圆柱形磁轭(60)还与光轴(52)同轴设置,以便将两个永磁体(57,58)包围在其中空部分内; 并且轭(60)在轭(60)的径向内周面上形成有环形磁轭间隙(63),以使流过磁轭的磁通向光轴泄漏。 在上述结构中,可以通过使用由用于构成同轴离子泵的永久磁铁产生的磁场来有效地形成磁场透镜,并且还可以将形成的磁场透镜叠加在电子枪上。 因此,可以获得高性能的电场浸没型电子枪,并且可以在电子枪的阴极尖端附近有效地排出电子枪室。

    Method for producing an electrostatic lens
    7.
    发明授权
    Method for producing an electrostatic lens 失效
    静电透镜的制造方法

    公开(公告)号:US5535508A

    公开(公告)日:1996-07-16

    申请号:US457836

    申请日:1995-06-01

    摘要: An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape.A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.

    摘要翻译: 静电透镜沿着中心轴产生平滑的电势分布,并减小透镜尺寸和总体形状。 金属层13沉积在绝缘圆筒11的内表面的特定位置,高电阻层12沉积在气缸11的内表面上除了金属层13之外的部分上。施加负电位 从外部电源19到金属层13,高电阻层12接地。

    Electrostatic lens and method for producing the same
    8.
    发明授权
    Electrostatic lens and method for producing the same 失效
    静电透镜及其制造方法

    公开(公告)号:US5444256A

    公开(公告)日:1995-08-22

    申请号:US168160

    申请日:1993-12-17

    IPC分类号: H01J3/18 H01J9/14 H01J37/12

    摘要: An electrostatic lens produces a smooth potential distribution along the center axis and is reduced in lens size and in total shape. A metal layer 13 is deposited at a certain position on an inner surface of insulating cylinder 11, and a high-resistance layer 12 is deposited on a portion except for the metal layer 13 on the inner surface of cylinder 11. A negative potential is applied from an external power source 19 to the metal layer 13, and the high-resistance layer 12 is earthed.

    摘要翻译: 静电透镜沿着中心轴产生平滑的电势分布,并减小透镜尺寸和总体形状。 金属层13沉积在绝缘圆筒11的内表面的特定位置,高电阻层12沉积在气缸11的内表面上除了金属层13之外的部分上。施加负电位 从外部电源19到金属层13,高电阻层12接地。

    Electron beam irradiating apparatus and electric signal detecting
apparatus
    9.
    发明授权
    Electron beam irradiating apparatus and electric signal detecting apparatus 失效
    电子束照射装置和电信号检测装置

    公开(公告)号:US5315119A

    公开(公告)日:1994-05-24

    申请号:US983229

    申请日:1992-11-19

    CPC分类号: H01J37/3026 H01J37/026

    摘要: To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.

    摘要翻译: 为了防止电荷积累在由电子束扫描的平面上并进一步提高S / N比,电子束照射装置包括:位置信息信号输出部分,用于输出位置信息信号,以依次指定位置信息信号 电子束照射在由电子束扫描的平面上,以便随机地指定照射位置; 以及照射控制器,用于响应于输出的位置信息信号,控制电子束在照射位置照射电子束。 此外,为了在像素时钟信号的周期内在足够的时间间隔内积分光电信号,电信号检测电路包括多个采样保持电路和用于依次选择和激活采样保持电路的选择电路。

    Method of testing semiconductor elements
    10.
    发明授权
    Method of testing semiconductor elements 失效
    测试半导体元件的方法

    公开(公告)号:US4912052A

    公开(公告)日:1990-03-27

    申请号:US248137

    申请日:1988-09-23

    CPC分类号: G01R31/305

    摘要: This invention concerns a method and an apparatus for measuring and testing the electric characteristic of a semiconductor device in a non-contact fashion. For conducting measurement and testing in a non-contact fashion, an electron beam is used to induce a voltage, on a semiconductor device which is an object to be tested (an object to be measured.) By changes with lapse of time of the induced voltage, the electric characteristic, of the semiconductor device are determined. Thus, an electron beam is irradiated to an object to be tested to induce a voltage thereafter to examine changes in the induced voltage. Then, the electric characteristic of the semiconductor device is measured and tested from the voltage thus induced and the voltage measured thereafter.