摘要:
In an operation of a pattern dimension measuring system comprising a stage, an electron gun part, electron lens systems for scanning electron beam on a sample and having a MOL mechanism thereto, a secondary electron detector for detecting secondary electrons and so forth emitted from the sample, and a host computer having a pattern dimension measuring part, the stage is moved at a constant velocity, the coordinates of the stage is measured by a laser interferometer in real time, the variation in working distance of the electron beam is measured in real time by the optical lever system from a focal length measuring part to be fed back to a stage control part and an objective lens. When a pattern serving as an object to be measured reaches a region capable of scanning, the electron beam is scanned in the best focus while moving the scanning start position of the electron beam in synchronism with the constant velocity movement of the stage, so that the SEM image thereof is acquired.
摘要:
To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要:
Before detecting the surface state of specific patterns a sample by means of an electron beam tester system, patterns formed in a specified surface area of the sample, are detected by deflecting an electron beam by a deflection coil. Data representing current supplied to the deflection coil, data representing the position of the sample during the pattern-detecting operation, and image signals representing the patterns found in the specified surface area, are stored in a memory. While the specific patterns of a sample are being detected, the electron beam is used to perform a second pattern-detecting operation. Data representing current supplied to the deflection coil during the second pattern-detecting operation, such data representing the position of the sample, and image signals provided by the second pattern-detecting operation representing the patterns formed in the specified surface area, afe compared with those data items already stored in the memory. From the difference between the compared two sets of data items, any drift in the electron beam is calculated. In accordance with the drift thus calculated, the deflection coil is energized to deflec the electron beam such that the beam is applied onto the desired portion of the sample.
摘要:
To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for-controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要:
In a gun (or lens) alignment control apparatus for an scanning electron microscope, a condenser (or objective) lens is controllably set to first and second conditions, respectively; first and second filament (or secondary electron) images obtained under the first and second conditions are inputted, respectively; the first and second filament (or secondary electron) images are processed to obtain first and second binarized images, respectively; the first and second binarized images are further processed to obtain first and second histograms, respectively; first and second coordinates at which the first and second histograms become maximum in frequency are detected, respectively; and exciting current for a gun (or lens) alignment coil is controlled so that the two coordinates match each other. Since the excitation of the gun (or lens) alignment coil can be controlled automatically so that the filament (or secondary electron) image obtained by the scanning electron microscope will not be shifted, the alignment error can be reduced and thereby an excellent image can be obtained.
摘要:
A pattern configuration measuring method of and apparatus for measuring a cross sectional profile of a pattern (10) formed on a flat plane with a concave or convex structure having a taper portion (10a, 10b) on both sides thereof, by scanning a beam in a predetermined direction with a scanning electron microscope (1), detecting a secondary electron to acquire an image signal of the pattern, and processing the image signal. The column (1a) of the scanning electron microscope is set at an optional inclination angle relative to the flat plane formed with the pattern, a beam is scanned onto the pattern with the scanning electron microscope in the direction perpendicular to the longitudinal direction of the concave or convex structure, an output signal is acquired from the scanning electron microscope and image-processed to detect both the taper portions of the pattern and to calculate the dimension of the pattern, a beam is scanned onto the pattern with the scanning electron microscope in the direction parallel to the longitudinal direction of the concave or convex structure, and an output signal is acquired from the scanning electron microscope and image-processed to calculate the cross sectional profile of the pattern. The column of the scanning electron microscope may be set perpendicular to the flat plane, and the pattern to be measured is set at an optional inclination angle relative to the column axis of the scanning electron microscope.
摘要:
This method is a method of measuring a taper angle, a thickness or a depth of a semiconductor integrated circuit pattern. Electron beam, light beam or the like is irradiated to a semiconductor integrated circuit pattern provided on a reference plane, thus to form a projected image. The projected image forms a predetermined angle with respect to a reference line set with respect to the reference plane. Then, lengths in a direction of the reference line of the projected images of symmetrical side walls of the pattern are measured to calculate from the ratio of those lengths and angle that the side walls and the reference plane form.
摘要:
An image forming method includes a first step of irradiating a beam onto an object, and using an intensity corresponding to an image area onto which the beam was irradiated as an intensity of a pixel at the center of the image area, and scanning a beam throughout the inspection area of the object to obtain an image within the inspection area as a collection of pixels arranged at intervals smaller than a beam diameter; and a second step of assigning a pixel to be processed and neighboring pixels with coefficients in accordance with a beam intensity distribution, multiplying the intensity of each pixel by each assigned coefficient, determining a new intensity of the pixel to be processed in accordance with the sum of respective products, and repeating the new intensity determining process for all pixels necessary to be processed. In the second step, the value of the coefficients for those pixels except on the scanning direction may be reduced. Further, a third step may be provided for linearly-transforming the intensities so as to make the intensities of respective pixels to be distributed within a predetermined range.
摘要:
An automatic focusing method for scanning electron microscopy. A scanning electron microscope is set in a low magnification mode to detect a taper portion of an object to be observed. The beam scanning whose direction is perpendicular to the taper portion is effected whenever objective lens control condition is changed at a first pitch, and the secondary electron signals obtained under these conditions are converted into video signals. The video signals are differential smoothed to calculate a sum of video signal absolute values. On the basis of the sum of the absolute values, an optimum objective lens control condition in the low magnification mode can be obtained. Sequentially, the microscope is set to a high magnification mode, and the objective lens control condition is further changed at a second pitch within a predetermined range with the optimum control condition in the low magnification mode as the center of the range. The beam scanning whose direction is perpendicular to the taper portion is effected. In the same way as in the low magnification mode, the secondary electrons signal obtained under these conditions are converted into video signals to obtain the optimum objective lens control condition in the high magnification mode. The optimum control condition obtained in the high magnification mode is determined as the control condition to determine the focal distance of the objective lens.
摘要:
An automatic focus control system comprises an electron beam lens column 1, a device control apparatus 2, and a host computer 3. In the host computer 3, an image processing section 32 and so on are provided. In case of measuring the critical dimension of the patterns in the wafer, after performing the global alignment adjustment, the power spectrum is calculated based on the SEM image of each measuring point in the wafer. After that, in case that the high-frequency component is included more than a prescribed standard value, without performing the automatic focus adjustment, the process for the pattern recognition is performed, and in case that the high-frequency component is included less than the standard value, the process for pattern recognition is performed just before the automatic focus adjustment. Therefore, it is possible to decrease the frequency (times) which performs the process for automatic focus adjustment; as a result, the throughput for measuring is improved.