摘要:
In an operation of a pattern dimension measuring system comprising a stage, an electron gun part, electron lens systems for scanning electron beam on a sample and having a MOL mechanism thereto, a secondary electron detector for detecting secondary electrons and so forth emitted from the sample, and a host computer having a pattern dimension measuring part, the stage is moved at a constant velocity, the coordinates of the stage is measured by a laser interferometer in real time, the variation in working distance of the electron beam is measured in real time by the optical lever system from a focal length measuring part to be fed back to a stage control part and an objective lens. When a pattern serving as an object to be measured reaches a region capable of scanning, the electron beam is scanned in the best focus while moving the scanning start position of the electron beam in synchronism with the constant velocity movement of the stage, so that the SEM image thereof is acquired.
摘要:
To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要:
To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for-controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要:
Before detecting the surface state of specific patterns a sample by means of an electron beam tester system, patterns formed in a specified surface area of the sample, are detected by deflecting an electron beam by a deflection coil. Data representing current supplied to the deflection coil, data representing the position of the sample during the pattern-detecting operation, and image signals representing the patterns found in the specified surface area, are stored in a memory. While the specific patterns of a sample are being detected, the electron beam is used to perform a second pattern-detecting operation. Data representing current supplied to the deflection coil during the second pattern-detecting operation, such data representing the position of the sample, and image signals provided by the second pattern-detecting operation representing the patterns formed in the specified surface area, afe compared with those data items already stored in the memory. From the difference between the compared two sets of data items, any drift in the electron beam is calculated. In accordance with the drift thus calculated, the deflection coil is energized to deflec the electron beam such that the beam is applied onto the desired portion of the sample.
摘要:
The present invention provides an electron optical lens column suitable for miniaturization, and provides the manufacturing method thereof. The column unit (1) comprises an inner column (11) and an outer column (12). The column unit is, as a whole, structured from a high-resistance electrically conductive ceramic. Electrostatic lenses (21, 22, 23, and 24) are affixed to the inner surface (111) of the inner column using a means such as plating or vapor deposition. Of the electrodes or electrode parts (211–213, 221, 231, 232, and 241–243) from which the lens is structured, those that share the same electric potential are connected by shared interconnections. This makes it possible to connect all of the electrodes or electrode parts with shared electric potentials as a group to the external interconnections.
摘要:
The present invention provides an electron optical lens column suitable for miniaturization, and provides the manufacturing method thereof. The column unit (1) comprises an inner column (11) and an outer column (12). The column unit is, as a whole, structured from a high-resistance electrically conductive ceramic. Electrostatic lenses (21, 22, 23, and 24) are affixed to the inner surface (111) of the inner column using a means such as plating or vapor deposition. Of the electrodes or electrode parts (211-213, 221, 231, 232, and 241-243) from which the lens is structured, those that share the same electric potential are connected by shared interconnections. This makes it possible to connect all of the electrodes or electrode parts with shared electric potentials as a group to the external interconnections.
摘要:
A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.
摘要:
In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical permanent magnets (57, 58) disposed coaxially with an optical axis (52) of the electron gun (51) in such a way as to sandwich a cylindrical ion pump anode (61) of the coaxial ion pump; the two permanent magnets are magnetized in a mutually opposing direction; a hollow cylindrical yoke (60) is disposed also coaxially with the optical axis (52) in such a way as to enclose the two permanent magnets (57, 58) within a hollow portion thereof; and the yoke (60) is formed with an annular yoke gap (63) in a radially inner circumferential surface of the yoke (60) to leak out a magnetic flux flowing through the yoke toward the optical axis. In the above-mentioned construction, the magnetic field lens can be formed efficiently with the use of the magnetic field generated by the permanent magnets for constituting the coaxial ion pump, and further the formed magnetic field lens can be superimposed upon the electron gun. Therefore, an electric field immersion type electron gun of high performance can be obtained, and further the electron gun chamber can be efficiently evacuated in the vicinity of the cathode tip of the electron gun.
摘要:
This invention concerns a method and an apparatus for measuring and testing the electric characteristic of a semiconductor device in a non-contact fashion. For conducting measurement and testing in a non-contact fashion, an electron beam is used to induce a voltage, on a semiconductor device which is an object to be tested (an object to be measured.) By changes with lapse of time of the induced voltage, the electric characteristic, of the semiconductor device are determined. Thus, an electron beam is irradiated to an object to be tested to induce a voltage thereafter to examine changes in the induced voltage. Then, the electric characteristic of the semiconductor device is measured and tested from the voltage thus induced and the voltage measured thereafter.
摘要:
An apparatus for scanning a laser beam to examine the surface of a semiconductor wafer comprises a stage onto which a semiconductor wafer is mounted and a laser beam scanning unit for repeatedly rectilinearly scanning a laser beam in a predetermined direction on the semiconductor wafer. This scanning apparatus further has a drive unit for rotating the semiconductor wafer and for moving the semiconductor wafer by only a predetermined distance in the predetermined direction every rotation of the wafer. The laser beam scanning unit rectilinearly scans the laser beam at a swing width of a predetermined amount.