公开(公告)号：US06913782B2

公开(公告)日：2005-07-05

申请号：US10309938

申请日：2002-12-03

Applicant: Witold Kula ,  Alexander Michael Zeltser

Inventor： Witold Kula ,  Alexander Michael Zeltser

IPC: G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  H01L43/08 ,  H01L43/12 ,  B05D3/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  G11B2005/3996

Abstract: A magnetoresistance sensor is fabricated using a sensor structure including a free layer deposited upon a lower layered structure and depositing an oxide structure overlying the free layer. The depositing of the oxide structure includes the steps of depositing a buffer layer overlying the free layer, wherein the buffer layer is a buffer-layer metal when deposited, depositing an overlayer overlying and contacting the buffer layer, the overlayer being an overlayer metallic oxide of an overlayer metal, and oxidizing the buffer layer to form a buffer layer metallic oxide.

Abstract translation: 使用包括沉积在较低层结构上的自由层并沉积覆盖自由层的氧化物结构的传感器结构来制造磁阻传感器。 氧化物结构的沉积包括沉积覆盖自由层的缓冲层的步骤，其中当沉积时缓冲层是缓冲层金属，沉积覆盖层并接触缓冲层的覆盖层，所述覆盖层是覆盖层的金属氧化物 覆盖金属，氧化缓冲层形成缓冲层金属氧化物。

公开(公告)号：US06867951B1

公开(公告)日：2005-03-15

申请号：US09614945

申请日：2000-07-12

Applicant: Witold Kula

Inventor： Witold Kula

IPC: G11B5/39

CPC classification number: G11B5/3903

Abstract: In a spin valve, an underlayer is made of oxygen-rich nickel oxide to enhance the giant magnetoresistive ratio (ΔR/R). The oxygen-rich nickel oxide film is made using reactive sputtering of a nickel target in an oxygen-rich sputtering atmosphere consisting substantially of pure oxygen and argon gases. The total pressure of the oxygen-rich atmosphere is reduced during the oxygen-rich nickel oxide film formation to additionally enhance the ΔR/R value. A spin valve including two adjacent oxygen-rich nickel oxide underlayers provides a higher ΔR/R ratio at a given pinning strength Hua than does a spin valve having only one oxygen-rich nickel oxide underlayer.

Abstract translation: 在自旋阀中，底层由富氧氧化镍制成，以增强巨磁阻比（DeltaR / R）。 富氧镍氧化物膜是使用基于纯氧和氩气组成的富氧溅射气氛中的镍靶的反应溅射制成的。 在富氧氧化镍膜形成期间，富氧气氛的总压降低，以增加ΔR/ R值。 包括两个相邻的富氧氧化镍底层的自旋阀在给定的钉扎强度华氏度下提供比仅具有一个富氧氧化镍底层的自旋阀更高的ΔR/ R比。

公开(公告)号：US09006704B2

公开(公告)日：2015-04-14

申请号：US12931866

申请日：2011-02-11

Applicant: Guenole Jan ,  Ru Ying Tong ,  Witold Kula ,  Cheng Horng

Inventor： Guenole Jan ,  Ru Ying Tong ,  Witold Kula ,  Cheng Horng

IPC: H01L33/04 ,  H01L29/66 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  H01L29/82 ,  H01F10/193

CPC classification number: H01L29/66984 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1933 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了一种磁性元件，其中具有Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以降低开关电流或增加磁性隧道结（MTJ）中的热稳定性。 在具有底部自旋阀结构的MTJ中，其中Hk增强层是氧化物，选择与Hk增强层接触的覆盖层，以使氧化物形成的自由能基本上大于氧化物的自由能。 自由层可以是由富含Fe的合金如Co20Fe60B20组成的单层或复合材料。 利用薄的自由层，界面垂直各向异性可以支配形状各向异性以产生垂直于层的平面的磁化。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US08946834B2

公开(公告)日：2015-02-03

申请号：US13409456

申请日：2012-03-01

Applicant: Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Guenole Jan

IPC: G11C11/14 ,  H01L43/08 ,  G11C11/02 ,  H01F10/32 ,  G01R33/09

CPC classification number: G01R33/098 ,  G11B5/82 ,  G11C11/161 ,  H01F10/123 ,  H01F10/16 ,  H01F10/3231 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness

Abstract translation: 使用硼含量为25〜40原子％并且厚度<20埃的CoFeB或CoFeNiB磁性层来实现磁性器件中的高垂直磁各向异性和增强的热稳定性。 将Co，Ni，Fe或其合金制成的除尘层添加到CoFeB层的顶表面和底表面，以增加磁阻以及改善Hc和Hk。 另一实施例包括在CoFeB自由层中的非磁性金属插入。 具有升高的B含量的CoFeB层可以作为自由层偶极层或参考层并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 热稳定性增加，使得在退火至至少400℃1小时后保留大量的Hk。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：US08923038B2

公开(公告)日：2014-12-30

申请号：US13527173

申请日：2012-06-19

Applicant: Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

IPC: G11C11/15 ,  G11C11/00 ,  H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

公开(公告)号：US08921961B2

公开(公告)日：2014-12-30

申请号：US13617432

申请日：2012-09-14

Applicant: Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

Inventor： Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L21/02 ,  H01L21/00

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

Abstract translation: 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

公开(公告)号：US08722543B2

公开(公告)日：2014-05-13

申请号：US12804840

申请日：2010-07-30

Applicant: Rodolfo Belen ,  Rongfu Xiao ,  Tom Zhong ,  Witold Kula ,  Chyu-Jiuh Torng

Inventor： Rodolfo Belen ,  Rongfu Xiao ,  Tom Zhong ,  Witold Kula ,  Chyu-Jiuh Torng

IPC: H01L21/302 ,  H01L21/00

CPC classification number: H01L43/12 ,  Y10T428/12535 ,  Y10T428/24975 ,  Y10T428/266 ,  Y10T428/31504 ,  Y10T428/31678

Abstract: A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.

Abstract translation: 公开了一种复合硬掩模，其防止在限定MTJ形状的蚀刻工艺期间在MRAM器件中积累金属蚀刻残留物。 结果，MTJ形状完整性得到显着提高。 硬掩模具有较低的非磁性间隔物，中间导电层和上部牺牲介电层。 在通过导电层的氟碳等离子体的图案转印期间，非磁性间隔物用作蚀刻停止层。 光致抗蚀剂图案通过第一氟碳蚀刻转移通过电介质层。 然后去除光致抗蚀剂，并且第二氟碳蚀刻将图案转移通过导电层。 介电层在第二次氟碳蚀刻期间保护导电层的顶表面，并在第三次RIE步骤的大部分期间保护由C，H和O组成的气体，以将图案转移通过下面的MTJ层。

公开(公告)号：US20140017820A1

公开(公告)日：2014-01-16

申请号：US14032599

申请日：2013-09-20

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L43/12

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于在自旋电子器件中形成MTJ的方法，并且包括在（Co / Ni）n组成的上覆层压层中增强垂直磁各向异性（PMA）的薄籽晶层。 种子层优选为NiCr，NiFeCr，Hf或其复合物。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20130334630A1

公开(公告)日：2013-12-19

申请号：US13527173

申请日：2012-06-19

Applicant: Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

公开(公告)号：US20120286382A1

公开(公告)日：2012-11-15

申请号：US13068398

申请日：2011-05-10

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层 优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。