公开(公告)号：US09981240B1

公开(公告)日：2018-05-29

申请号：US15241661

申请日：2016-08-19

Applicant: HRL Laboratories, LLC

Inventor： Christopher S Roper ,  Adam F. Gross

IPC: B01J19/00 ,  C01G49/02 ,  C30B29/12 ,  C30B29/22 ,  C30B7/10 ,  C30B7/14 ,  C30B29/62 ,  C30B33/06 ,  C01G49/00 ,  C01F17/00 ,  B01L3/00

CPC classification number: B01J19/0046 ,  B01J2219/00331 ,  B01J2219/00585 ,  B01J2219/00599 ,  B01J2219/00686 ,  B01J2219/0075 ,  B01J2219/00754 ,  B01L3/502784 ,  B01L2200/0647 ,  B01L2200/0673 ,  C01F17/0062 ,  C01G49/0045 ,  C01G49/02 ,  C01P2004/16 ,  C01P2004/40 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/80 ,  C30B7/10 ,  C30B7/14 ,  C30B29/12 ,  C30B29/16 ,  C30B29/22 ,  C30B29/60 ,  C30B33/06

Abstract: Methods to fabricate tightly packed arrays of nanoparticles are disclosed, without relying on organic ligands or a substrate. In some variations, a method of assembling particles into an array comprises dispersing particles in a liquid solution; introducing a triggerable pH-control substance capable of generating an acid or a base; and triggering the pH-control substance to generate an acid or a base within the liquid solution, thereby titrating the pH. During pH titration, the particle-surface charge magnitude is reduced, causing the particles to assemble into a particle array. Other variations provide a device for assembling particles into particle arrays, comprising a droplet-generating microfluidic region; a first-fluid inlet port; a second-fluid inlet port; a reaction microfluidic region, disposed in fluid communication with the droplet-generating microfluidic region; and a trigger source configured to trigger generation of an acid or a base from at least one pH-control substance contained within the reaction microfluidic region.

公开(公告)号：US20180100101A1

公开(公告)日：2018-04-12

申请号：US15566199

申请日：2016-05-27

Applicant: TOHOKU UNIVERSITY ,  C&A CORPORATION

Inventor： Shunsuke KUROSAWA ,  Akira YOSHIKAWA ,  Kei KAMADA ,  Yuui YOKOTA ,  Yuji OHASHI ,  Takahiko HORIAI ,  Yasuhiro SHOJI ,  Rikito MURAKAMI

IPC: C09K11/77 ,  H01L27/146 ,  C01F17/00 ,  G01T1/202 ,  G01T1/20 ,  C30B29/22 ,  C30B15/00

CPC classification number: C09K11/7774 ,  C01F17/0043 ,  C09K11/00 ,  C30B15/00 ,  C30B29/22 ,  G01T1/161 ,  G01T1/20 ,  G01T1/2006 ,  G01T1/202 ,  G01T1/2023 ,  H01L27/14663 ,  H01L31/0232

Abstract: A crystal material that is represented by a general formula (1): (RExA1-x-y-sByM′s)2+α(Si1-t′M″t)2+βO7+γ (1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1≤y

公开(公告)号：US20180061542A1

公开(公告)日：2018-03-01

申请号：US15559298

申请日：2016-03-17

Applicant: The University of Houston System

Inventor： Venkat Selvamanickam

IPC: H01F6/06 ,  H01L39/24 ,  H01L39/14 ,  H01L39/12 ,  H01F1/147 ,  C30B25/18 ,  C23C14/18 ,  C30B29/22 ,  C23C14/35 ,  C25D13/02

Abstract: A superconductor tape may be fabricated via Metal Organic Chemical Vapor Deposition (MOCVD) to achieve peel strengths greater than approximately 4.5 N/cm. The superconductor tape may be fabricated via MOCVD with a REBCO composition that includes the elements Samarium (Sm)-Barium(Ba)-Copper(Cu)-Oxygen(O). Varying levels of Copper (Cu) content can achieve peel strengths ranging between approximately 4.5 N/cm to approximately 8.0 N/cm.

公开(公告)号：US09896462B1

公开(公告)日：2018-02-20

申请号：US15270259

申请日：2016-09-20

Applicant: Florida State University Research Foundation, Inc.

Inventor： Biwu Ma ,  Chenkun Zhou ,  Zhao Yuan

IPC: C07F7/22 ,  C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  C30B7/14 ,  C30B29/22

CPC classification number: C07F7/2208 ,  C09K11/06 ,  C09K2211/10 ,  C09K2211/1007 ,  C09K2211/188 ,  C30B7/14 ,  C30B29/22 ,  H01L51/005 ,  H01L51/502

Abstract: Provided herein are metal halide perovskites that may have a 0D crystal structure, and may be lead free. Also provided are methods for making the metal halide perovskites, including methods for making bulk crystals or micro crystals. Devices, such as optoelectronic devices, also are provided that include one or more of the metal halide perovskites. A metal halide perovskite may be a light emitting material in the devices.

公开(公告)号：US09751774B2

公开(公告)日：2017-09-05

申请号：US14426094

申请日：2013-05-31

Applicant: THE XINJIANG TECHNICAL INSTITUTE OF PHYSICS & CHEMISTRY, CHINESE ACADEMY OF SCIENCES

Inventor： Shilie Pan ,  Hongping Wu ,  Hongwei Yu

IPC: C01B35/10 ,  C30B11/00 ,  G02F1/355 ,  C01D17/00 ,  C30B9/12 ,  C30B29/22

CPC classification number: C01D17/003 ,  C01B35/10 ,  C01D17/00 ,  C01P2002/70 ,  C30B9/12 ,  C30B11/003 ,  C30B29/22 ,  G02F1/3551

Abstract: The present invention relates to a cesium borosilicate compound, a nonlinear optical crystal of cesium borosilicate, and a preparation method therefor and a use thereof. The cesium borosilicate compound has a chemical formula of Cs2B4SiO9 and a molecular weight of 481.15, and is prepared using a solid phase method. The nonlinear optical crystal of the cesium borosilicate compound has a chemical formula of Cs2B4SiO9 and a molecular weight of 481.15, does not have a center of symmetry, belongs to the tetragonal system with space group I4 and unit-cell parameters a=6.731(3) Å, c=9.871(9) Å and V=447.2(5) Å3, and has a wide transmittance range. The shortest ultraviolet cutoff edge is smaller than 190 nm, the frequency doubling effect of the crystal is 4.6 KDP, and the crystal is grown by a high-temperature solution spontaneous crystallization method and a flux method. The crystal has advantages of high growth rate, being transparent and inclusion free, low cost having a wide transmittance range, high hardness, good mechanical property, being crack resistant and not prone to deliquescence, being easy to process and store, and the like. The crystal is widely applied to manufacturing of nonlinear optical devices such as frequency doubling generators, frequency up-converters, frequency down-converters or optical parametric oscillators.

公开(公告)号：US20170239772A1

公开(公告)日：2017-08-24

申请号：US15424223

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIFUMI TAKASU ,  YOSHIO OKAYAMA ,  AKIHIKO ISHIBASHI ,  ISAO TASHIRO ,  AKIO UETA ,  MASAKI NOBUOKA ,  NAOYA RYOKI

IPC: B24B7/22 ,  C30B33/00 ,  C30B29/22

CPC classification number: B24B7/22 ,  C30B29/22 ,  C30B29/26 ,  C30B33/00 ,  H01L21/00

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. An unevenness having a height of 500 nm or more is not provided on the epitaxially-grown surface.

公开(公告)号：US09716004B2

公开(公告)日：2017-07-25

申请号：US14343355

申请日：2012-08-02

Applicant: Kohei Sasaki

Inventor： Kohei Sasaki

IPC: H01L29/04 ,  H01L29/24 ,  H01L29/267 ,  H01L29/47 ,  H01L21/02 ,  C30B29/16 ,  C30B29/22 ,  C30B25/18 ,  C30B25/20 ,  H01L29/66 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872 ,  C30B23/02

CPC classification number: H01L21/02609 ,  C30B23/025 ,  C30B25/186 ,  C30B25/20 ,  C30B29/16 ,  C30B29/22 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02661 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/872

Abstract: A crystal laminate structure, in which crystals can be epitaxially grown on a β-Ga2O3-based substrate with high efficiency to produce a high-quality β-Ga2O3-based crystal film on the substrate; and a method for producing the crystal laminate structure are provided. The crystal laminate structure includes: a β-Ga2O3-based substrate, of which the major face is a face that is rotated by 50 to 90° inclusive with respect to face; and a β-Ga2O3-based crystal film which is formed by the epitaxial crystal growth on the major face of the β-Ga2O3-based substrate.

公开(公告)号：US09711590B2

公开(公告)日：2017-07-18

申请号：US14233699

申请日：2013-09-24

Applicant: FLOSFIA INC.

Inventor： Kentaro Kaneko ,  Toshimi Hitora ,  Takashi Hirao

IPC: H01L29/04 ,  C30B29/22 ,  H01L21/02 ,  C30B25/02 ,  C30B29/20 ,  H01L29/24

CPC classification number: H01L29/04 ,  C30B25/02 ,  C30B29/20 ,  C30B29/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/24

Abstract: There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.

公开(公告)号：US20170179485A1

公开(公告)日：2017-06-22

申请号：US15397491

申请日：2017-01-03

Applicant: Johnson Matthey PLC

Inventor： Christian VOGLER ,  Gerhard NUSPL ,  Margret WOHLFAHRT-MEHRENS ,  Peter AXMANN ,  Gisela ARNOLD

IPC: H01M4/505 ,  C01B35/12 ,  C30B1/10 ,  C30B29/22 ,  H01M4/131 ,  H01M10/0525

CPC classification number: H01M4/505 ,  C01B35/128 ,  C01G45/1242 ,  C01G51/54 ,  C01P2002/32 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/51 ,  C01P2004/52 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/13 ,  C01P2006/40 ,  C30B1/10 ,  C30B29/22 ,  H01M4/131 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/028 ,  Y02E60/122

Abstract: The present invention relates to a mixed oxide containing a) a mixed-substituted lithium manganese spinel in which some of the manganese lattice sites are occupied by lithium ions and b) a boron-oxygen compound. Furthermore, the present invention relates to a process for its preparation and the use of the mixed oxide as electrode material for lithium ion batteries.

公开(公告)号：US09685515B2

公开(公告)日：2017-06-20

申请号：US14851210

申请日：2015-09-11

Applicant: TAMURA CORPORATION

Inventor： Kohei Sasaki

IPC: H01L29/12 ,  H01L31/07 ,  H01L29/24 ,  C30B29/16 ,  H01L21/02 ,  C30B23/06 ,  C30B29/22 ,  C30B29/68 ,  H01L29/04 ,  C30B13/00 ,  C30B15/34

CPC classification number: H01L29/24 ,  C30B13/00 ,  C30B15/34 ,  C30B23/066 ,  C30B29/16 ,  C30B29/22 ,  C30B29/68 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045

Abstract: A crystal laminate structure includes an epitaxial growth substrate including a β-Ga2O3-based single crystal and a (010) plane or a plane inclined at an angle not more than 37.5° with respect to the (010) plane as a main surface thereof and a high electrical resistance, and an epitaxial crystal formed on the main surface of the epitaxial growth substrate. The epitaxial crystal includes a Ga-containing oxide.