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公开(公告)号:US20200263319A1
公开(公告)日:2020-08-20
申请号:US16739105
申请日:2020-01-09
Inventor: KENTARO MIYANO , NAOYA RYOKI , AKIHIKO ISHIBASHI , MASAKI NOBUOKA
Abstract: A ScAlMgO4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO4 monocrystalline substrate are provided. The ScAlMgO4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.
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公开(公告)号:US20230021122A1
公开(公告)日:2023-01-19
申请号:US17807889
申请日:2022-06-21
Inventor: TAKEHIRO ASAHI , NAOYA RYOKI , YUKIO NISHIKAWA , YOSHIO OKAYAMA
IPC: F21V8/00
Abstract: A light emitting device includes a light source and a waveguide structure. The light source emits light having a directionality. The waveguide structure includes an optical waveguide and an exterior part. The optical waveguide has an incident end surface and an emission end surface, converts a wavelength of the light incident from the incident end surface, and emits the light from the emission end surface. The exterior part is optically transparent and covers the optical waveguide such that the incident end surface and the emission end surface are exposed from the exterior part. The optical waveguide is elongated in a length direction. The length direction of the optical waveguide is inclined at a predetermined angle with respect to an optical axis of the light in a predetermined plane including the length direction of the optical waveguide and the optical axis of the light. The predetermined angle is set to allow the light to propagate in the optical waveguide with total internal reflection at a boundary surface between the optical waveguide and the exterior part.
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公开(公告)号:US20200181801A1
公开(公告)日:2020-06-11
申请号:US16691542
申请日:2019-11-21
Inventor: NAOYA RYOKI , KENTARO MIYANO , MASAKI NOBUOKA , AKIHIKO ISHIBASHI
Abstract: A RAMO4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.
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公开(公告)号:US20170239773A1
公开(公告)日:2017-08-24
申请号:US15424244
申请日:2017-02-03
Inventor: YOSHIFUMI TAKASU , YOSHIO OKAYAMA , AKIHIKO ISHIBASHI , ISAO TASHIRO , AKIO UETA , MASAKI NOBUOKA , NAOYA RYOKI
Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.
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公开(公告)号:US20220190557A1
公开(公告)日:2022-06-16
申请号:US17512632
申请日:2021-10-27
Inventor: NAOYA RYOKI , YUKIO NISHIKAWA , TAKEHIRO ASAHI , YOSHIO OKAYAMA
Abstract: A light emitting device includes a light source that emits light having a directivity from a light emitting surface of the light source, a waveguide structure that includes an optical waveguide having an inlet facing the light emitting surface, and a peripheral wall protruding from the inlet toward the light emitting surface, and a lens that is provided between the light emitting surface and the inlet. The peripheral wall has an inner surface surrounding the inlet. The peripheral wall has a first opening closer to the light emitting surface and a second opening closer to the inlet. The first opening is larger than the second opening. The peripheral wall includes a narrow opening portion in which an internal space of the peripheral wall is smaller than the lens when viewed from a direction of an optical axis of the light. The inner surface of the peripheral wall includes an inclined surface that inclines so that the internal space becomes narrower as approaching the inlet, at least in the narrow opening portion. The lens is disposed in contact with the narrow opening portion in the internal space of the peripheral wall.
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公开(公告)号:US20170239772A1
公开(公告)日:2017-08-24
申请号:US15424223
申请日:2017-02-03
Inventor: YOSHIFUMI TAKASU , YOSHIO OKAYAMA , AKIHIKO ISHIBASHI , ISAO TASHIRO , AKIO UETA , MASAKI NOBUOKA , NAOYA RYOKI
Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. An unevenness having a height of 500 nm or more is not provided on the epitaxially-grown surface.
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