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公开(公告)号：US20170239772A1
公开(公告)日：2017-08-24
申请号：US15424223
申请日：2017-02-03
Inventor： YOSHIFUMI TAKASU , YOSHIO OKAYAMA , AKIHIKO ISHIBASHI , ISAO TASHIRO , AKIO UETA , MASAKI NOBUOKA , NAOYA RYOKI
Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. An unevenness having a height of 500 nm or more is not provided on the epitaxially-grown surface.
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公开(公告)号：US20210234337A1
公开(公告)日：2021-07-29
申请号：US17092841
申请日：2020-11-09
Inventor： TAKAAKI KASSAI , TAKAYUKI YOSHIDA , AKIHIKO ISHIBASHI
Abstract: A laser oscillator includes a first laser diode that emits first laser light, a second laser diode that emits second laser light having a wavelength different from a wavelength of the first laser light, a first current source that drives the first laser diode, a second current source that drives the second laser diode, a combiner that superimposes the first laser light with the second laser light, and an output mirror that emits laser light combined by the combiner to the outside.
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Patent Agency Ranking
公开(公告)号：US20200263319A1
公开(公告)日：2020-08-20
申请号：US16739105
申请日：2020-01-09
Inventor： KENTARO MIYANO , NAOYA RYOKI , AKIHIKO ISHIBASHI , MASAKI NOBUOKA
Abstract: A ScAlMgO4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO4 monocrystalline substrate are provided. The ScAlMgO4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.
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公开(公告)号：US20210006042A1
公开(公告)日：2021-01-07
申请号：US16912018
申请日：2020-06-25
Inventor： AKIHIKO ISHIBASHI , HIROSHI OHNO , JUNICHI TAKINO , TOMOAKI SUMI
Abstract: A group-III nitride semiconductor laser device includes a GaN substrate, and an active layer provided on the GaN substrate, in which the GaN substrate has an oxygen concentration of 5×1019 cm−3 or more, and an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength.
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5.发明申请公开(公告)号：US20200181801A1
公开(公告)日：2020-06-11
申请号：US16691542
申请日：2019-11-21
Inventor： NAOYA RYOKI , KENTARO MIYANO , MASAKI NOBUOKA , AKIHIKO ISHIBASHI
Abstract: A RAMO4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.
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公开(公告)号：US20170279003A1
公开(公告)日：2017-09-28
申请号：US15431721
申请日：2017-02-13
Inventor： AKIHIKO ISHIBASHI , AKIO UETA
CPC classification number: H01L33/007 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/2003 , H01L31/1852
Abstract: A Group III nitride semiconductor containing: a RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMO4 substrate, having therebetween a dissimilar film that contains a material different from the RAMO4 substrate, and has plural openings.
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公开(公告)号：US20170239773A1
公开(公告)日：2017-08-24
申请号：US15424244
申请日：2017-02-03
Inventor： YOSHIFUMI TAKASU , YOSHIO OKAYAMA , AKIHIKO ISHIBASHI , ISAO TASHIRO , AKIO UETA , MASAKI NOBUOKA , NAOYA RYOKI
Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.
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