公开(公告)号：US20170239772A1

公开(公告)日：2017-08-24

申请号：US15424223

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIFUMI TAKASU ,  YOSHIO OKAYAMA ,  AKIHIKO ISHIBASHI ,  ISAO TASHIRO ,  AKIO UETA ,  MASAKI NOBUOKA ,  NAOYA RYOKI

IPC: B24B7/22 ,  C30B33/00 ,  C30B29/22

CPC classification number: B24B7/22 ,  C30B29/22 ,  C30B29/26 ,  C30B33/00 ,  H01L21/00

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. An unevenness having a height of 500 nm or more is not provided on the epitaxially-grown surface.

公开(公告)号：US20230399770A1

公开(公告)日：2023-12-14

申请号：US18457440

申请日：2023-08-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： AKIO UETA ,  HIROSHI OHNO

IPC: C30B29/40 ,  C30B25/20 ,  H01L29/04

CPC classification number: C30B29/406 ,  C30B25/20 ,  H01L29/04 ,  C30B19/02

Abstract: A group III nitride crystal substrate has a main surface and a back surface opposite to the main surface. The average dislocation density of the main surface and the average dislocation density of the back surface are less than or equal to 6.0×105 cm−2. Furthermore, the difference between the average dislocation density of the main surface and the average dislocation density of the back surface is less than or equal to 5.0×104 cm−2. The warpage of the crystal axis of the main surface has a radius of curvature of more than or equal to 30 m.

公开(公告)号：US20170279003A1

公开(公告)日：2017-09-28

申请号：US15431721

申请日：2017-02-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： AKIHIKO ISHIBASHI ,  AKIO UETA

IPC: H01L33/00 ,  H01L31/18

CPC classification number: H01L33/007 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L31/1852

Abstract: A Group III nitride semiconductor containing: a RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMO4 substrate, having therebetween a dissimilar film that contains a material different from the RAMO4 substrate, and has plural openings.

公开(公告)号：US20170239773A1

公开(公告)日：2017-08-24

申请号：US15424244

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIFUMI TAKASU ,  YOSHIO OKAYAMA ,  AKIHIKO ISHIBASHI ,  ISAO TASHIRO ,  AKIO UETA ,  MASAKI NOBUOKA ,  NAOYA RYOKI

IPC: B24B7/22 ,  C30B33/00 ,  C30B29/22

CPC classification number: B24B7/22 ,  C30B29/22 ,  C30B33/00

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.