公开(公告)号：US20170239772A1

公开(公告)日：2017-08-24

申请号：US15424223

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIFUMI TAKASU ,  YOSHIO OKAYAMA ,  AKIHIKO ISHIBASHI ,  ISAO TASHIRO ,  AKIO UETA ,  MASAKI NOBUOKA ,  NAOYA RYOKI

IPC: B24B7/22 ,  C30B33/00 ,  C30B29/22

CPC classification number: B24B7/22 ,  C30B29/22 ,  C30B29/26 ,  C30B33/00 ,  H01L21/00

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. An unevenness having a height of 500 nm or more is not provided on the epitaxially-grown surface.

公开(公告)号：US20200263319A1

公开(公告)日：2020-08-20

申请号：US16739105

申请日：2020-01-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KENTARO MIYANO ,  NAOYA RYOKI ,  AKIHIKO ISHIBASHI ,  MASAKI NOBUOKA

IPC: C30B29/22 ,  C30B15/20

Abstract: A ScAlMgO4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO4 monocrystalline substrate are provided. The ScAlMgO4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.

公开(公告)号：US20180174911A1

公开(公告)日：2018-06-21

申请号：US15825035

申请日：2017-11-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHINSUKE KOMATSU ,  YOSHIO OKAYAMA ,  MASAKI NOBUOKA

IPC: H01L21/78 ,  C30B29/40 ,  H01L21/02 ,  C01F17/00 ,  C30B25/18 ,  H01L33/00

CPC classification number: H01L21/7813 ,  C01F17/0025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02428 ,  H01L21/0254 ,  H01L33/007

Abstract: An RAMO4 substrate that includes an RAMO4 monocrystalline substrate formed of a single crystal represented by general formula RAMO4, wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd. The RAMO4 monocrystalline substrate has a principal surface with a plurality of grooves. The principal surface has an off-angle θ with respect to a cleaving surface of the single crystal. The RAMO4 monocrystalline substrate satisfies tan θ≤Wy/Wx, where Wx is the width at the top surface of a raised portion between the grooves, and Wy is the height of the raised portion.

公开(公告)号：US20200181801A1

公开(公告)日：2020-06-11

申请号：US16691542

申请日：2019-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NAOYA RYOKI ,  KENTARO MIYANO ,  MASAKI NOBUOKA ,  AKIHIKO ISHIBASHI

IPC: C30B29/26 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  C30B15/22 ,  C30B29/40 ,  C30B25/18

Abstract: A RAMO4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

公开(公告)号：US20170260648A1

公开(公告)日：2017-09-14

申请号：US15411792

申请日：2017-01-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIO OKAYAMA ,  MASAKI NOBUOKA

IPC: C30B19/12 ,  C30B19/06 ,  C30B29/40 ,  C30B19/02

CPC classification number: C30B19/12 ,  C30B19/02 ,  C30B19/062 ,  C30B29/403

Abstract: A method for producing a Group III nitride crystal includes: preparing a protective layer on a region except for an epitaxial growth surface of an RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of a trivaient element selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of a trivalent element selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of a divalent element selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd); and forming a Group III nitride crystal on the epitaxial growth surface of the RAMO4 substrate by a flux method.

公开(公告)号：US20170239773A1

公开(公告)日：2017-08-24

申请号：US15424244

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIFUMI TAKASU ,  YOSHIO OKAYAMA ,  AKIHIKO ISHIBASHI ,  ISAO TASHIRO ,  AKIO UETA ,  MASAKI NOBUOKA ,  NAOYA RYOKI

IPC: B24B7/22 ,  C30B33/00 ,  C30B29/22

CPC classification number: B24B7/22 ,  C30B29/22 ,  C30B33/00

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.