公开(公告)号：US20200181801A1

公开(公告)日：2020-06-11

申请号：US16691542

申请日：2019-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NAOYA RYOKI ,  KENTARO MIYANO ,  MASAKI NOBUOKA ,  AKIHIKO ISHIBASHI

IPC: C30B29/26 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  C30B15/22 ,  C30B29/40 ,  C30B25/18

Abstract: A RAMO4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

公开(公告)号：US20200263319A1

公开(公告)日：2020-08-20

申请号：US16739105

申请日：2020-01-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KENTARO MIYANO ,  NAOYA RYOKI ,  AKIHIKO ISHIBASHI ,  MASAKI NOBUOKA

IPC: C30B29/22 ,  C30B15/20

Abstract: A ScAlMgO4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO4 monocrystalline substrate are provided. The ScAlMgO4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.