SUBSTRATE TREATING APPARATUS, SUBSTRATE TREATING SYSTEM, AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20230267603A1

    公开(公告)日:2023-08-24

    申请号:US18171135

    申请日:2023-02-17

    发明人: Shinji SHIMIZU

    摘要: Disclosed is a substrate treating apparatus for performing a predetermined treatment on a substrate. The apparatus includes: a recipe memory unit configured to store a recipe; an imaging unit provided at a predetermined location and configured to image the component as a real image at work; a normal image memory unit configured to simulate a condition in advance where the component normally operates in response to the recipe and store in advance a normal image at this time in a view from the location in accordance with three-dimensional design information of the substrate treating apparatus; an operation controller configured to cause the predetermined treatment to be performed; and an abnormality detecting unit configured to detect an abnormality in accordance with a difference between the normal image synchronized with operation of the recipe and the real image.

    PLASMA COATING METHOD AND APPARATUS FOR BIOLOGICAL SURFACE MODIFICATION

    公开(公告)号:US20230201870A1

    公开(公告)日:2023-06-29

    申请号:US17912788

    申请日:2021-03-17

    IPC分类号: B05D1/00 B05D5/08 C09D5/14

    CPC分类号: B05D1/62 B05D5/08 C09D5/14

    摘要: A method for providing a bio-active layer on a surface, includes the steps of: a) ionizing a plasma gas at low temperature of 150° C. or lower, and at about atmospheric pressure, thereby creating a plasma; b) introducing a precursor into the plasma; c) exposing the surface to the plasma comprising the precursor, thereby forming a coating onto the surface. The plasma gas is ionized by means of electrodes, wherein the plasma gas is ionized by the electrodes with a power of at most 10 Watt per cm2 of the electrode surface. The bio-active layer is an antibiofouling layer, an antibacterial layer, an antiviral layer and/or a microbial collecting layer, such that the plasma gas includes inert gas for at least 99% by volume. The inert gas is a non-noble gas.

    ALD process and hardware with improved purge efficiency

    公开(公告)号:US11664216B2

    公开(公告)日:2023-05-30

    申请号:US17182555

    申请日:2021-02-23

    摘要: Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.