公开(公告)号：US08034719B1

公开(公告)日：2011-10-11

申请号：US11311584

申请日：2005-12-08

Applicant: Daniel L. Jean ,  Michael Deeds ,  Allen Keeney

Inventor： Daniel L. Jean ,  Michael Deeds ,  Allen Keeney

IPC: H01L21/302

CPC classification number: B81C1/00619 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0188 ,  H01L21/76885

Abstract: To fabricate high aspect ratio metal structures, a two-layer structure is provided on a conductive layer. The two-layer structure includes a first layer adjacent the conductive layer and a second layer adjacent the first layer where the second layer is etchable by a Deep Reactive Ion Etching (DRIE) process. Using the DRIE process, at least one selected region of the second layer is completely etched away with the selected region being at least partially aligned with a region of the conductive layer such that the first layer is then exposed thereover. The first layer so-exposed is then removed to expose the region of the conductive layer thereunder. Metal is electroplated onto the exposed conductive layer and any remaining portions of the two-layer structure are then removed.

Abstract translation: 为了制造高纵横比金属结构，在导电层上提供两层结构。 两层结构包括邻近导电层的第一层和邻近第一层的第二层，其中第二层可通过深度反应离子蚀刻（DRIE）工艺进行蚀刻。 使用DRIE工艺，第二层的至少一个选定区域被完全蚀刻掉，所选择的区域至少部分地与导电层的区域对准，使得第一层然后暴露在其中。 然后去除暴露的第一层以暴露其下面的导电层的区域。 将金属电镀在暴露的导电层上，然后除去两层结构的任何剩余部分。

公开(公告)号：US20110212308A1

公开(公告)日：2011-09-01

申请号：US12999829

申请日：2009-06-23

Applicant: David P Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

Inventor： David P Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

IPC: B32B3/10 ,  B32B37/20 ,  C08J5/18

CPC classification number: B81C1/00357 ,  B81C1/00373 ,  B81C1/00476 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/0188 ,  B81C2201/0194 ,  C01B32/15 ,  C01B32/168 ,  C01P2004/13 ,  C01P2004/16 ,  C04B14/026 ,  C04B30/02 ,  C04B2111/00844 ,  C04B2111/00853 ,  Y10T428/24802

Abstract: A method for the production of a fibrous network-substrate component includes the steps of providing a network of fibrous material (1) on a preliminary substrate (2) by filtering high aspect ratio molecular structures (HARM-structures) from gas flow, placing the network of fibrous material (1) on the preliminary substrate (2) in proximity to a secondary substrate (3), applying a force to the network of fibrous material (1) to preferably attract the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3) in order to transfer the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3), and removing the preliminary substrate (2) from the network of fibrous material (1).

Abstract translation: 制造纤维网状基材成分的方法包括以下步骤：通过从气流中过滤高纵横比分子结构（HARM-结构），在预备基材（2）上提供纤维材料网（1），将 在初级衬底（2）上靠近次级衬底（3）的纤维材料（1）的网络，向纤维材料（1）的网络施加力以优选地将纤维材料（1）的网络从初步 为了将纤维材料（1）的网络从预备衬底（2）传送到第二衬底（3），将衬底（2）连接到第二衬底（3），并从初始衬底（2）的网络 纤维材料（1）。

公开(公告)号：US20100055352A1

公开(公告)日：2010-03-04

申请号：US12099556

申请日：2008-04-08

Applicant: James L. MAXWELL

Inventor： James L. MAXWELL

IPC: C23C16/48

CPC classification number: C23C16/4418 ,  B81C99/0095 ,  B81C2201/0188 ,  C23C16/4415 ,  C23C16/455 ,  C23C16/4551 ,  C23C16/483

Abstract: A method of growing a plurality of free-standing structures comprises providing a plurality of free-standing structures, each free-standing structure having a first end coupled to a substrate, and a terminal end; providing at least one laser beam, the laser beam having a beam waste at a point proximate to the terminal end of the free-standing structure; and moving one of the plurality of freestanding structures or the beam waste to provide a growth zone proximate to the terminal end of each of the free-standing structures such that the free-standing structures grow into the growth zones by addition of decomposing precursor components. The growth rates of each of the free-standing structures are substantially the same.

Abstract translation: 生长多个独立结构的方法包括提供多个独立结构，每个独立结构具有耦合到衬底的第一端和终端; 提供至少一个激光束，所述激光束在靠近所述独立结构的终端的点处具有光束废料; 并且移动所述多个独立结构或束废料中的一个以提供靠近每个独立结构的末端的生长区，使得通过添加分解的前体组分而使自立结构生长到生长区中。 每个独立结构的增长率基本相同。

公开(公告)号：US11807523B2

公开(公告)日：2023-11-07

申请号：US17482309

申请日：2021-09-22

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Chien-Hua Chen ,  Devin A. Mourey ,  Michael G. Groh

IPC: B41J2/155 ,  B41J2/16 ,  B81C99/00 ,  B81C1/00 ,  B01L3/02

CPC classification number: B81C99/008 ,  B01L3/0268 ,  B41J2/155 ,  B41J2/1603 ,  B41J2/1637 ,  B81C1/00309 ,  B41J2202/19 ,  B41J2202/20 ,  B41J2202/21 ,  B81B2201/052 ,  B81B2201/058 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0188 ,  B81C2203/0154

Abstract: Examples include a device comprising integrated circuit dies molded into a molded panel. The molded panel has three-dimensional features formed therein, where the three-dimensional features are associated with the integrated circuit dies. To form the three-dimensional features, a feature formation material is deposited, the molded panel is formed, and the feature formation material is removed.

公开(公告)号：US11681141B2

公开(公告)日：2023-06-20

申请号：US16705677

申请日：2019-12-06

Applicant: STMicroelectronics S.r.l.

Inventor： Roberto Carminati ,  Sonia Costantini ,  Riccardo Gianola ,  Linda Montagna ,  Francesca Maria Carla Carpignano

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B26/10

CPC classification number: G02B26/085 ,  B81B3/0045 ,  B81C1/00166 ,  G02B26/101 ,  B81B2201/042 ,  B81B2203/0127 ,  B81B2203/0154 ,  B81B2203/0163 ,  B81B2203/04 ,  B81C2201/016 ,  B81C2201/0188

Abstract: A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.

公开(公告)号：US09824859B1

公开(公告)日：2017-11-21

申请号：US14980884

申请日：2015-12-28

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/244

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US20170210621A1

公开(公告)日：2017-07-27

申请号：US15500430

申请日：2015-07-14

Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V

Inventor： Felix Schiebel ,  Christoph Eberl ,  Matthew Berwind ,  Peter Gumbsch

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00373 ,  B29C64/135 ,  B33Y10/00 ,  B33Y80/00 ,  B81B7/0074 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81C3/001 ,  B81C99/0095 ,  B81C2201/0188 ,  B81C2203/038

Abstract: A method for producing micromechanical components is provided. A liquid starting material which can be cured by means of irradiation is applied onto a substrate. A partial volume of the starting material is cured by means of a local irradiation process using a first radiation source in order to produce at least one three-dimensional structure. The three-dimensional structure delimits at least one closed cavity in which at least one part of the liquid starting material is enclosed. Alternatively or in addition, a micromechanical component is provided that contains a liquid starting material, which is partly cured by means of irradiation, and at least one cavity in which the liquid starting material is enclosed.

公开(公告)号：US09593012B2

公开(公告)日：2017-03-14

申请号：US14774799

申请日：2014-03-12

Applicant: Robert Bosch GmbH

Inventor： Friedjof Heuck ,  Christoph Schelling

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00412 ,  B81C2201/0177 ,  B81C2201/0188

Abstract: A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

Abstract translation: 微机械部件的制造方法包括向基板提供暴露在结构化区域中的单晶起始层。 结构化区域具有上表面和侧面，其中在上表面上设置适合于促进结构单晶起始层暴露的上表面的硅外延生长的催化剂层，并且不提供催化剂层 在侧面。 该方法还包括在反应气体气氛中使用催化剂层在单晶起始层的上表面上进行选择性外延生长工艺，以形成微机械功能层。

公开(公告)号：US20170050844A1

公开(公告)日：2017-02-23

申请号：US14827683

申请日：2015-08-17

Applicant: Texas Instruments Incorporated

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: A hermetic package comprising a substrate (110) having a surface with a MEMS structure (101) of a first height (101a), the substrate hermetically sealed to a cap (120) forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack (130) of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (140); the stack having a bottom first metal seed film (131a) adhering to the substrate and a bottom second metal seed film (131b) adhering to the bottom first seed film, both seed films of a first width (131c) and a common sidewall (138); further a top first metal seed film (132a) adhering to the cap and a top second metal seed film (132b) adhering to the top first seed film, both seed films with a second width (132c) smaller than the first width and a common sidewall (139); the bottom and top metal seed films tied to a metal layer (135) including gold-indium intermetallic compounds, layer (135) having a second height (133a) greater than the first height and encasing the seed films and common sidewalls.

Abstract translation: 一种密封包装，其包括具有具有第一高度（101a）的MEMS结构（101）的表面的基底（110），所述基底被气密地密封到在所述MEMS结构上形成空腔的帽（120） 所述盖通过粘附到所述基板表面和所述盖的金属层的垂直堆叠（130）附接到所述基板表面，所述堆叠具有围绕所述MEMS结构的连续轮廓，同时与所述MEMS结构隔开距离（140）; 所述堆叠具有附着到所述基板的底部第一金属种子膜（131a）和粘附到所述底部第一种子膜的底部第二金属种子膜（131b），具有第一宽度（131c）和公共侧壁（138）的两种种子膜 ）; 另外，粘附到盖的顶部第一金属种子膜（132a）和粘附到顶部第一种子膜的顶部第二金属种子膜（132b），具有小于第一宽度的第二宽度（132c）的两种种子膜和共同的 侧壁（139）; 连接到包括金 - 铟金属间化合物的金属层（135）的底部和顶部金属种子膜，具有大于第一高度的第二高度（133a）的层（135）并且包围种子膜和共同侧壁。

公开(公告)号：US09556521B1

公开(公告)日：2017-01-31

申请号：US14809985

申请日：2015-07-27

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/06 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。