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公开(公告)号：US10509074B2
公开(公告)日：2019-12-17
申请号：US15902407
申请日：2018-02-22
发明人： Guenole Jan , Huanlong Liu , Jian Zhu , Yuan-Jen Lee , Po-Kang Wang
IPC分类号： G01R31/319 , G11C29/14 , G11C29/38 , G11C29/12 , G01R31/3167 , G06F11/263 , G01R31/28 , H03M1/12 , G01R31/3185 , G11C11/16
摘要： A stimulus/response controller within a magnetic electrical test apparatus is configured for generating and transmitting stimulus waveforms to a high-speed DAC for application to a MTJ DUT. The response signal from the MTJ DUT is applied to an ADC that digitizes and transfers the response signal to the stimulus/response controller. The stimulus/response controller has a configurable function circuit that is selectively configured for performing evaluation and analysis of the digitized stimulus and response signals. The configurable functions are structured for performing any evaluation and analysis function for determining the characteristics of the MTJ DUT(s). Examples of the evaluation and analysis operations include averaging the stimulus and/or response signals, determining the differential resistance, the degradation times, failure counts, or the bit error rate of the MTJ DUT(s). The evaluations and analysis of the MTJ DUT are then available for transfer to a tester controller within the magnetic electrical test apparatus.
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42.发明申请公开(公告)号：US20190331752A1
公开(公告)日：2019-10-31
申请号：US16506024
申请日：2019-07-09
发明人： Santiago Serrano Guisan , Luc Thomas , Son Le , Guenole Jan
IPC分类号： G01R33/60 , G01R33/345 , G01R31/3185
摘要： A ferromagnetic resonance (FMR) measurement system is disclosed with a waveguide transmission line (WGTL) connected at both ends to a mounting plate having an opening through which the WGTL is suspended. While the WGTL bottom surface contacts a portion of magnetic film on a whole wafer, a plurality of microwave frequencies is sequentially transmitted through the WGTL. Simultaneously, a magnetic field is applied to the contacted region thereby causing a FMR condition in the magnetic film. After RF output is transmitted through or reflected from the WGTL to a RF detector and converted to a voltage signal, effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening are determined based on magnetic field intensity, microwave frequency and voltage output. A plurality of measurements is performed by controllably moving the WGTL or wafer and repeating the simultaneous application of microwave frequencies and magnetic field at additional preprogrammed locations on the magnetic film.
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公开(公告)号：US20190311754A1
公开(公告)日：2019-10-10
申请号：US16442737
申请日：2019-06-17
发明人： Yuan-Jen Lee , Guenole Jan , Huanlong Liu , Jian Zhu
摘要： An initialization process is disclosed for a perpendicular magnetic tunnel junction (p-MTJ) wherein the switching error rate is reduced from a typical range of 30-100 ppm to less than 10 ppm. In one embodiment, an in-plane magnetic field is applied after a final anneal step is performed during memory device fabrication such that all magnetizations in the free layer, and AP1 and AP2 pinned layers are temporarily aligned “in-plane”. After the applied field is removed, interfacial perpendicular magnetic anisotropy (PMA) at a tunnel barrier/AP1 interface induces a single AP1 magnetic domain with a magnetization in a first vertical direction. Interfacial PMA at a FL/tunnel barrier interface affords a single FL domain with magnetization in the first direction or opposite thereto. AP2 magnetization is opposite to the first direction as a result of antiferromagnetic coupling with the AP1 layer. Alternatively, a perpendicular-to-plane magnetic field may be applied for initialization.
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公开(公告)号：US10431736B2
公开(公告)日：2019-10-01
申请号：US16022862
申请日：2018-06-29
发明人： Huanlong Liu , Yuan-Jen Lee , Jian Zhu , Guenole Jan , Luc Thomas , Po-Kang Wang , Ru-Ying Tong , Jodi Mari Iwata
摘要： A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
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公开(公告)号：US20190288189A1
公开(公告)日：2019-09-19
申请号：US16429163
申请日：2019-06-03
发明人： Guenole Jan , Ru-Ying Tong
摘要： A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.
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46.发明申请公开(公告)号：US20190189910A1
公开(公告)日：2019-06-20
申请号：US15841479
申请日：2017-12-14
发明人： Sahil Patel , Guenole Jan , Ru-Ying Tong , Vignesh Sundar , Dongna Shen , Yu-Jen Wang , Po-Kang Wang , Huanlong Liu
CPC分类号： H01L43/08 , H01L27/222 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.
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公开(公告)号：US10325639B2
公开(公告)日：2019-06-18
申请号：US15818148
申请日：2017-11-20
发明人： Yuan-Jen Lee , Guenole Jan , Huanlong Liu , Jian Zhu
摘要： An initialization process is disclosed for a perpendicular magnetic tunnel junction (p-MTJ) wherein the switching error rate is reduced from a typical range of 30-100 ppm to less than 10 ppm. In one embodiment, an in-plane magnetic field is applied after a final anneal step is performed during memory device fabrication such that all magnetizations in the free layer, and AP1 and AP2 pinned layers are temporarily aligned “in-plane”. After the applied field is removed, interfacial perpendicular magnetic anisotropy (PMA) at a tunnel barrier/AP1 interface induces a single AP1 magnetic domain with a magnetization in a first vertical direction. Interfacial PMA at a FL/tunnel barrier interface affords a single FL domain with magnetization in the first direction or opposite thereto. AP2 magnetization is opposite to the first direction as a result of antiferromagnetic coupling with the AP1 layer. Alternatively, a perpendicular-to-plane magnetic field may be applied for initialization.
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公开(公告)号：US20230371395A1
公开(公告)日：2023-11-16
申请号：US18360390
申请日：2023-07-27
发明人： Jodi Mari Iwata , Guenole Jan , Ru-Ying Tong
IPC分类号： H10N50/10 , H03B15/00 , H01F10/32 , H01L21/02 , G01R33/09 , G11C11/16 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
CPC分类号： H10N50/10 , H03B15/006 , H01F10/329 , H01L21/02172 , H01L21/02323 , H01L21/02329 , G01R33/098 , G11C11/161 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
摘要： A magnetic device for magnetic random access memory (MRAM), spin torque MRAM, or spin torque oscillator technology is disclosed wherein a magnetic tunnel junction (MTJ) with a sidewall is formed between a bottom electrode and a top electrode. A passivation layer that is a single layer or multilayer comprising one of B, C, or Ge, or an alloy thereof wherein the B, C, and Ge content, respectively, is at least 10 atomic % is formed on the MTJ sidewall to protect the MTJ from reactive species during subsequent processing including deposition of a dielectric layer that electrically isolates the MTJ from adjacent MTJs, and during annealing steps around 400° C. in CMOS fabrication. The single layer is about 3 to 10 Angstroms thick and may be an oxide or nitride of B, C, or Ge. The passivation layer is preferably amorphous to prevent diffusion of reactive oxygen or nitrogen species.
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公开(公告)号：US11758820B2
公开(公告)日：2023-09-12
申请号：US17335717
申请日：2021-06-01
发明人： Jodi Mari Iwata , Guenole Jan , Ru-Ying Tong
IPC分类号： H10N50/10 , G01R33/09 , G11C11/16 , H01F10/32 , H01L21/02 , H03B15/00 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
CPC分类号： H10N50/10 , G01R33/098 , G11C11/161 , H01F10/329 , H01L21/02172 , H01L21/02323 , H01L21/02329 , H03B15/006 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
摘要： A magnetic device for magnetic random access memory (MRAM), spin torque MRAM, or spin torque oscillator technology is disclosed wherein a magnetic tunnel junction (MTJ) with a sidewall is formed between a bottom electrode and a top electrode. A passivation layer that is a single layer or multilayer comprising one of B, C, or Ge, or an alloy thereof wherein the B, C, and Ge content, respectively, is at least 10 atomic % is formed on the MTJ sidewall to protect the MTJ from reactive species during subsequent processing including deposition of a dielectric layer that electrically isolates the MTJ from adjacent MTJs, and during annealing steps around 400° C. in CMOS fabrication. The single layer is about 3 to 10 Angstroms thick and may be an oxide or nitride of B, C, or Ge. The passivation layer is preferably amorphous to prevent diffusion of reactive oxygen or nitrogen species.
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公开(公告)号：US20230060687A1
公开(公告)日：2023-03-02
申请号：US17981734
申请日：2022-11-07
发明人： Vignesh Sundar , Yu-Jen Wang , Luc Thomas , Guenole Jan
摘要： A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2 configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance×area (RA1) product than RA2 for an overlying second tunnel barrier (TB2) to provide an acceptable magnetoresistive ratio (DRR). Moreover, first and second pinned layers, PL1 and PL2, respectively, have magnetizations that are aligned antiparallel to enable a lower critical switching current that when in a parallel alignment. The condition RA1
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