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公开(公告)号：US10658577B2
公开(公告)日：2020-05-19
申请号：US16587927
申请日：2019-09-30
发明人： Huanlong Liu , Yuan-Jen Lee , Jian Zhu , Guenole Jan , Luc Thomas , Po-Kang Wang , Ru-Ying Tong , Jodi Iwata
摘要： A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
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公开(公告)号：US20200028073A1
公开(公告)日：2020-01-23
申请号：US16587927
申请日：2019-09-30
发明人： Huanlong Liu , Yuan-Jen Lee , Jian Zhu , Guenole Jan , Luc Thomas , Po-Kang Wang , Ru-Ying Tong , Jodi Iwata
摘要： A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
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3.发明授权公开(公告)号：US11696511B2
公开(公告)日：2023-07-04
申请号：US17063425
申请日：2020-10-05
发明人： Sahil Patel , Guenole Jan , Ru-Ying Tong , Vignesh Sundar , Dongna Shen , Yu-Jen Wang , Po-Kang Wang , Huanlong Liu
CPC分类号： H01L43/08 , H01L27/222 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.
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公开(公告)号：US11573270B2
公开(公告)日：2023-02-07
申请号：US17365822
申请日：2021-07-01
发明人： Guenole Jan , Huanlong Liu , Jian Zhu , Yuan-Jen Lee , Po-Kang Wang
IPC分类号： G01R31/319 , G11C29/14 , G11C29/38 , G11C29/12 , G01R31/3167 , G01R31/28 , G01R31/3185 , G06F11/263 , G11C11/16 , H03M1/12
摘要： A method includes receiving tester configuration data, test pattern data, and tester operation data; configuring a circuit for performing a designated test evaluation; generating a stimulus waveform; converting the stimulus waveform to an analog stimulus signal; transferring the analog stimulus signal to a first terminal of a MTJ DUT at reception of a trigger timing signal; generating time traces based on the trigger timing signal; generating a response signal at a second terminal of the MTJ DUT and across a termination resistor as the analog stimulus signal is transferred through the MTJ DUT; converting the response signal to a digitized response signal indicating its voltage amplitude; and performing the designated test evaluation and analysis function in the configurable circuit based on voltage amplitudes and time values of the stimulus waveform, the digitized response signal, and the timing traces.
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公开(公告)号：US11309489B2
公开(公告)日：2022-04-19
申请号：US17008277
申请日：2020-08-31
发明人： Huanlong Liu , Yuan-Jen Lee , Jian Zhu , Guenole Jan , Po-Kang Wang
摘要： A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB.
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公开(公告)号：US10978124B2
公开(公告)日：2021-04-13
申请号：US16915126
申请日：2020-06-29
发明人： Huanlong Liu , Guenole Jan , Yuan-Jen Lee , Jian Zhu , Po-Kang Wang
IPC分类号： G11C11/16
摘要： Circuits and methods for programming a MTJ stack of an MRAM cell minimizes a ferromagnetic free layer or pinned layer polarization reversal due to back-hopping. The programming begins by applying a first segment of the segment of the write pulse at a first write voltage level for a first time period to program the MTJ stack. A second segment of the segment of the write pulse at a second write voltage level that is less than the first write voltage level is applied to the magnetic tunnel junction stack for a second time period to correct the polarization of the MTJ when the MTJ stack has reversed polarization during the first time period. The second segment of the segment of the write pulse may be a ramp, or multiple ramps, or have a quiescent period between it and the first segment of the write pulse.
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公开(公告)号：US10699765B2
公开(公告)日：2020-06-30
申请号：US15616116
申请日：2017-06-07
发明人： Huanlong Liu , Guenole Jan , Yuan-Jen Lee , Jian Zhu , Po-Kang Wang
IPC分类号： G11C11/16
摘要： Circuits and methods for programming a MTJ stack of an MRAM cell minimizes a ferromagnetic free layer or pinned layer polarization reversal due to back-hopping. The programming begins by applying a first segment of the segment of the write pulse at a first write voltage level for a first time period to program the MTJ stack. A second segment of the segment of the write pulse at a second write voltage level that is less than the first write voltage level is applied to the magnetic tunnel junction stack for a second time period to correct the polarization of the MTJ when the MTJ stack has reversed polarization during the first time period. The second segment of the segment of the write pulse may be a ramp, or multiple ramps, or have a quiescent period between it and the first segment of the write pulse.
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8.发明授权公开(公告)号：US10797232B2
公开(公告)日：2020-10-06
申请号：US16728061
申请日：2019-12-27
发明人： Sahil Patel , Guenole Jan , Ru-Ying Tong , Vignesh Sundar , Dongna Shen , Yu-Jen Wang , Po-Kang Wang , Huanlong Liu
摘要： A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.
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公开(公告)号：US20200279995A1
公开(公告)日：2020-09-03
申请号：US16876658
申请日：2020-05-18
发明人： Huanlong Liu , Yuan-Jen Lee , Jian Zhu , Guenole Jan , Luc Thomas , Po-Kang Wang , Ru-Ying Tong , Jodi Iwata
摘要： A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
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10.发明申请公开(公告)号：US20200136025A1
公开(公告)日：2020-04-30
申请号：US16728061
申请日：2019-12-27
发明人： Sahil Patel , Guenole Jan , Ru-Ying Tong , Vignesh Sundar , Dongna Shen , Yu-Jen Wang , Po-Kang Wang , Huanlong Liu
摘要： A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.
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