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公开(公告)号：US11930715B2
公开(公告)日：2024-03-12
申请号：US17140790
申请日：2021-01-04
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A conductive via layer is deposited on a bottom electrode, then patterned and trimmed to form a sub 20 nm conductive via on the bottom electrode. The conductive via is encapsulated with a first dielectric layer, which is planarized to expose a top surface of the conductive via. A MTJ stack is deposited on the encapsulated conductive via wherein the MTJ stack comprises at least a pinned layer, a barrier layer, and a free layer. A top electrode layer is deposited on the MTJ stack and patterned and trimmed to form a sub 30 nm hard mask. The MTJ stack is etched using the hard mask to form an MTJ device and over etched into the encapsulation layer but not into the bottom electrode wherein metal re-deposition material is formed on sidewalls of the encapsulation layer underlying the MTJ device and not on sidewalls of a barrier layer of the MTJ device.
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2.发明公开公开(公告)号：US20230389435A1
公开(公告)日：2023-11-30
申请号：US18232027
申请日：2023-08-09
发明人： Yi Yang , Dongna Shen , Vignesh Sundar , Yu-Jen Wang
CPC分类号： H10N50/01 , H01F41/34 , H01F10/3254 , H10N50/80 , G11C11/161
摘要： A method for etching a magnetic tunneling junction (MTJ) structure is described. A MTJ stack is deposited on a bottom electrode wherein the MTJ stack comprises at least a pinned layer, a barrier layer on the pinned layer, and a free layer on the barrier layer, A top electrode layer is deposited on the MTJ stack. A hard mask is deposited on the top electrode layer. The top electrode layer and hard mask are etched. Thereafter, the MTJ stack not covered by the hard mask is etched, stopping at or within the pinned layer. Thereafter, an encapsulation layer is deposited over the partially etched MTJ stack and etched away on horizontal surfaces leaving a self-aligned hard mask on sidewalls of the partially etched MTJ stack. Finally, the remaining MTJ stack not covered by hard mask and self-aligned hard mask is etched to complete the MTJ structure.
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3.发明公开公开(公告)号：US20230371399A1
公开(公告)日：2023-11-16
申请号：US18360055
申请日：2023-07-27
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A first dielectric layer is deposited on a bottom electrode and partially etched through to form a first via opening having straight sidewalls, then etched all the way through to the bottom electrode to form a second via opening having tapered sidewalls. A metal layer is deposited in the second via opening and planarized to the level of the first dielectric layer. The remaining first dielectric layer is removed leaving an electrode plug on the bottom electrode. MTJ stacks are deposited on the electrode plug and on the bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and polished to expose a top surface of the MTJ stack on the electrode plug. A top electrode layer is deposited to complete the MTJ structure.
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4.发明授权公开(公告)号：US11696511B2
公开(公告)日：2023-07-04
申请号：US17063425
申请日：2020-10-05
发明人： Sahil Patel , Guenole Jan , Ru-Ying Tong , Vignesh Sundar , Dongna Shen , Yu-Jen Wang , Po-Kang Wang , Huanlong Liu
CPC分类号： H01L43/08 , H01L27/222 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.
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5.发明授权公开(公告)号：US11563171B2
公开(公告)日：2023-01-24
申请号：US17216016
申请日：2021-03-29
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers.
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公开(公告)号：US20220359821A1
公开(公告)日：2022-11-10
申请号：US17873488
申请日：2022-07-26
发明人： Yu-Jen Wang , Dongna Shen , Vignesh Sundar , Sahil Patel
IPC分类号： H01L43/12 , H01L21/033 , H01L21/3105 , H01L21/311
摘要： A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers is provided on a bottom electrode. A top electrode is provided on the MTJ stack. The top electrode is patterned. Thereafter, the MTJ stack not covered by the patterned top electrode is oxidized or nitridized. Then, the MTJ stack is patterned to form a MTJ device wherein any sidewall re-deposition formed on sidewalls of the MTJ device is non-conductive and wherein some of the dielectric layer remains on horizontal surfaces of the bottom electrode.
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7.发明授权公开(公告)号：US11316103B2
公开(公告)日：2022-04-26
申请号：US16728036
申请日：2019-12-27
发明人： Dongna Shen , Yu-Jen Wang , Ru-Ying Tong , Vignesh Sundar , Sahil Patel
IPC分类号： H01L43/12 , H01L21/306 , H01L21/3065 , B82Y40/00 , B81C1/00
摘要： A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall residue and minimal sidewall damage is disclosed wherein a pattern is first formed in a hard mask that is an uppermost MTJ layer. Thereafter, the hard mask sidewall is etch transferred through the remaining MTJ layers including a reference layer, free layer, and tunnel barrier between the free layer and reference layer. The etch transfer may be completed in a single RIE step that features a physical component involving inert gas ions or plasma, and a chemical component comprised of ions or plasma generated from one or more of methanol, ethanol, ammonia, and CO. In other embodiments, a chemical treatment with one of the aforementioned chemicals, and a volatilization at 50° C. to 450° C. may follow an etch transfer through the MTJ stack with an ion beam etch or plasma etch involving inert gas ions.
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8.发明授权公开(公告)号：US11024797B2
公开(公告)日：2021-06-01
申请号：US16728043
申请日：2019-12-27
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A first dielectric layer is deposited on a bottom electrode and partially etched through to form a first via opening having straight sidewalls, then etched all the way through to the bottom electrode to form a second via opening having tapered sidewalls. A metal layer is deposited in the second via opening and planarized to the level of the first dielectric layer. The remaining first dielectric layer is removed leaving an electrode plug on the bottom electrode. MTJ stacks are deposited on the electrode plug and on the bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and polished to expose a top surface of the MTJ stack on the electrode plug. A top electrode layer is deposited to complete the MTJ structure.
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公开(公告)号：US20210135099A1
公开(公告)日：2021-05-06
申请号：US17121394
申请日：2020-12-14
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a first bottom electrode. The conductive via is encapsulated with a first dielectric layer and planarized to expose a top surface of the conductive via. A second conductive layer is deposited over the first dielectric layer and the conductive via. The second conductive layer is patterned to form a sub 60 nm second conductive layer wherein the conductive via and second conductive layer together form a T-shaped second bottom electrode. MTJ stacks are deposited on the T-shaped second bottom electrode and on the first bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and planarized to expose a top surface of the MTJ stack on the T-shaped second bottom electrode. A top electrode contacts the MTJ stack on the T-shaped second bottom electrode plug.
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10.发明授权公开(公告)号：US10964887B2
公开(公告)日：2021-03-30
申请号：US15986244
申请日：2018-05-22
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers.
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