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1.发明授权公开(公告)号：US11985905B2
公开(公告)日：2024-05-14
申请号：US18158086
申请日：2023-01-23
Inventor： Yi Yang , Dongna Shen , Yu-Jen Wang
CPC classification number: H10N50/01 , G11C11/161 , H01F10/3254 , H01F41/34 , H10N50/10 , H10N50/80
Abstract: A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers.
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公开(公告)号：US11963457B2
公开(公告)日：2024-04-16
申请号：US18064808
申请日：2022-12-12
Inventor： Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.
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3.发明公开公开(公告)号：US20230389436A1
公开(公告)日：2023-11-30
申请号：US18361677
申请日：2023-07-28
Inventor： Yi Yang , Yu-Jen Wang
Abstract: An ultra-large height top electrode for MRAM is achieved by employing a novel thin metal/thick dielectric/thick metal hybrid hard mask stack. Etching parameters are chosen to etch the dielectric quickly but to have an extremely low etch rate on the metals above and underneath. Because of the protection of the large thickness of the dielectric layer, the ultra-large height metal hard mask is etched with high integrity, eventually making a large height top electrode possible.
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公开(公告)号：US11800811B2
公开(公告)日：2023-10-24
申请号：US17391716
申请日：2021-08-02
Inventor： Dongna Shen , Yi Yang , Jesmin Haq , Yu-Jen Wang
CPC classification number: H10N50/01 , G11C11/161 , H01F10/3254 , H01F41/34 , H10N50/10 , H10N50/80
Abstract: A MTJ stack is deposited on a bottom electrode. A metal hard mask is deposited on the MTJ stack and a dielectric mask is deposited on the metal hard mask. A photoresist pattern is formed on the dielectric mask, having a critical dimension of more than about 65 nm. The dielectric and metal hard masks are etched wherein the photoresist pattern is removed. The dielectric and metal hard masks are trimmed to reduce their critical dimension to 10-60 nm and to reduce sidewall surface roughness. The dielectric and metal hard masks and the MTJ stack are etched wherein the dielectric mask is removed and a MTJ device is formed having a small critical dimension of 10-60 nm, and having further reduced sidewall surface roughness.
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公开(公告)号：US11527711B2
公开(公告)日：2022-12-13
申请号：US17195317
申请日：2021-03-08
Inventor： Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.
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Patent Agency Ranking
公开(公告)号：US11329218B2
公开(公告)日：2022-05-10
申请号：US16728099
申请日：2019-12-27
Inventor： Yi Yang , Yu-Jen Wang
Abstract: A metal hard mask layer is deposited on a MTJ stack on a substrate. A hybrid hard mask is formed on the metal hard mask layer, comprising a plurality of spin-on carbon layers alternating with a plurality of spin-on silicon layers wherein a topmost layer of the hybrid hard mask is a silicon layer. A photo resist pattern is formed on the hybrid hard mask. First, the topmost silicon layer of the hybrid hard mask is etched where is it not covered by the photo resist pattern using a first etching chemistry. Second, the hybrid hard mask is etched where it is not covered by the photo resist pattern wherein the photoresist pattern is etched away using a second etch chemistry. Thereafter, the metal hard mask and MTJ stack are etched where they are not covered by the hybrid hard mask to form a MTJ device and overlying top electrode.
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7.发明申请公开(公告)号：US20210217951A1
公开(公告)日：2021-07-15
申请号：US17216016
申请日：2021-03-29
Inventor： Yi Yang , Dongna Shen , Yu-Jen Wang
Abstract: A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers.
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公开(公告)号：US20210193915A1
公开(公告)日：2021-06-24
申请号：US17195317
申请日：2021-03-08
Inventor： Jesmin Haq , Tom Zhong , Zhongjian Teng , Vinh Lam , Yi Yang
Abstract: A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a concave or convex surface, the sequentially formed layers conform to that shape and acquire it and are subject to stresses that cause various crystal defects to migrate away from the axis of symmetry, leaving the region immediately surrounding the axis of symmetry relatively defect free. The resulting stack can then be patterned to leave only the region that is relatively defect free.
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公开(公告)号：US20210098696A1
公开(公告)日：2021-04-01
申请号：US17121457
申请日：2020-12-14
Inventor： Yi Yang , Dongna Shen , Vignesh Sundar , Yu-Jen Wang
Abstract: A method for etching a magnetic tunneling junction (MTJ) structure is described. A MTJ stack is deposited on a bottom electrode wherein the MTJ stack comprises at least a pinned layer, a barrier layer on the pinned layer, and a free layer on the barrier layer, A top electrode layer is deposited on the MTJ stack. A hard mask is deposited on the top electrode layer. The top electrode layer and hard mask are etched. Thereafter, the MTJ stack not covered by the hard mask is etched, stopping at or within the pinned layer. Thereafter, an encapsulation layer is deposited over the partially etched MTJ stack and etched away on horizontal surfaces leaving a self-aligned hard mask on sidewalls of the partially etched MTJ stack. Finally, the remaining MTJ stack not covered by hard mask and self-aligned hard mask is etched to complete the MTJ structure.
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10.发明申请公开(公告)号：US20200303636A1
公开(公告)日：2020-09-24
申请号：US16894033
申请日：2020-06-05
Inventor： Yi Yang , Dongna Shen , Zhongjian Teng , Jesmin Haq , Yu-Jen Wang
Abstract: A metal layer and first dielectric hard mask are deposited on a bottom electrode. These are patterned and etched to a first pattern size. The patterned metal layer is trimmed using IBE at an angle of 70-90 degrees wherein the metal layer is reduced to a second pattern size smaller than the first pattern size. A dielectric layer is deposited surrounding the patterned metal layer and polished to expose a top surface of the patterned metal layer to form a via connection to the bottom electrode. A MTJ stack is deposited on the dielectric layer and via connection. The MTJ stack is etched to a pattern size larger than the via size wherein an over etching is performed. Re-deposition material is formed on sidewalls of the dielectric layer underlying the MTJ device and not on sidewalls of a barrier layer of the MTJ device.
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