- 专利标题: Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characterization of Magnetic Films and Multilayers
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申请号: US16506024申请日: 2019-07-09
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公开(公告)号: US20190331752A1公开(公告)日: 2019-10-31
- 发明人: Santiago Serrano Guisan , Luc Thomas , Son Le , Guenole Jan
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: G01R33/60
- IPC分类号: G01R33/60 ; G01R33/345 ; G01R31/3185
摘要:
A ferromagnetic resonance (FMR) measurement system is disclosed with a waveguide transmission line (WGTL) connected at both ends to a mounting plate having an opening through which the WGTL is suspended. While the WGTL bottom surface contacts a portion of magnetic film on a whole wafer, a plurality of microwave frequencies is sequentially transmitted through the WGTL. Simultaneously, a magnetic field is applied to the contacted region thereby causing a FMR condition in the magnetic film. After RF output is transmitted through or reflected from the WGTL to a RF detector and converted to a voltage signal, effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening are determined based on magnetic field intensity, microwave frequency and voltage output. A plurality of measurements is performed by controllably moving the WGTL or wafer and repeating the simultaneous application of microwave frequencies and magnetic field at additional preprogrammed locations on the magnetic film.
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