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    COATING MATERIAL FOR PROCESSING CHAMBERS
    44.
    发明申请
    COATING MATERIAL FOR PROCESSING CHAMBERS 审中-公开

    公开(公告)号：US20200058539A1

    公开(公告)日：2020-02-20

    申请号：US16520166

    申请日：2019-07-23

    Applicant: Applied Materials, Inc.

    Inventor： Sudha RATHI ,  Dong Hyung LEE ,  Abdul Aziz KHAJA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA

    IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/40

    Abstract: Embodiments described herein relate to coating materials with high resistivity for use in processing chambers. To counteract the high charges near the top surface of the thermal conductive support, the top surface of the thermal conductive support can be coated with a high resistivity layer. The high resistivity of the layer reduces the amount of charge at the top surface of the thermally conductive element, greatly reducing or preventing arcing incidents along with reducing electrostatic chucking degradation. The high resistivity layer can also be applied to other chamber components. Embodiments described herein also relate to methods for fabricating a chamber component for use in a processing environment. The component can be fabricated by forming a body of a chamber component, optionally ex-situ seasoning the body, installing the chamber component into a processing chamber, in-situ seasoning the chamber component, and performing a deposition process in the processing chamber.

    METHODS OF MINIMIZING WAFER BACKSIDE DAMAGE IN SEMICONDUCTOR WAFER PROCESSING
    45.
    发明申请
    METHODS OF MINIMIZING WAFER BACKSIDE DAMAGE IN SEMICONDUCTOR WAFER PROCESSING 审中-公开

    公开(公告)号：US20190393072A1

    公开(公告)日：2019-12-26

    申请号：US16437048

    申请日：2019-06-11

    Applicant: Applied Materials, Inc.

    Inventor： Abdul Aziz KHAJA ,  Liangfa HU ,  Sudha S. RATHI ,  Ganesh BALASUBRAMANIAN

    IPC: H01L21/687 ,  H01L21/67

    Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.

    PROCESSING CHAMBER AND METHOD WITH THERMAL CONTROL
    46.
    发明申请
    PROCESSING CHAMBER AND METHOD WITH THERMAL CONTROL 审中-公开

    公开(公告)号：US20190066984A1

    公开(公告)日：2019-02-28

    申请号：US16033707

    申请日：2018-07-12

    Applicant: Applied Materials, Inc.

    Inventor： Hemant P. MUNGEKAR ,  Ganesh BALASUBRAMANIAN ,  Yoichi SUZUKI ,  Abdul Aziz KHAJA

    IPC: H01J37/32 ,  H05B1/02 ,  H01L21/67 ,  H01L21/683 ,  H01L21/324 ,  H01L21/66

    Abstract: A processing chamber and a processing method for processing a substrate in the processing chamber with thermal control are described herein. The method includes heating a first substrate using a heater apparatus during a first processing operation. The heater apparatus has a first setpoint during at least a first portion of the first processing operation. The first substrate is disposed on a substrate support surface of an electrostatic chuck in a processing chamber. The method further includes determining a first parameter change corresponding to a resistivity change in the electrostatic chuck, determining a second setpoint for the heater apparatus based on the first parameter change, and controlling the heater apparatus to the second setpoint.

    ALUMINUM FLUORIDE MITIGATION BY PLASMA TREATMENT
    48.
    发明申请
    ALUMINUM FLUORIDE MITIGATION BY PLASMA TREATMENT 审中-公开

    公开(公告)号：US20180036775A1

    公开(公告)日：2018-02-08

    申请号：US15653785

    申请日：2017-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Vivek Bharat SHAH ,  Anup Kumar SINGH ,  Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN ,  Bok Hoen KIM

    IPC: B08B7/00 ,  C23C16/50 ,  C23C16/44 ,  B08B9/08

    Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate-processing chamber. In one implementation, the method comprises forming a reactive fluorine species from a fluorine-containing cleaning gas mixture. The method further comprises delivering the reactive fluorine species into a processing volume of a substrate-processing chamber. The processing volume includes one or more aluminum-containing interior surfaces having unwanted deposits formed thereon. The method further comprises permitting the reactive fluorine species to react with the unwanted deposits and aluminum-containing interior surfaces of the substrate-processing chamber to form aluminum fluoride. The method further comprises exposing nitrogen-containing cleaning gas mixture to in-situ plasma to form reactive nitrogen species in the processing volume. The method further comprises permitting the reactive nitrogen species to react with the ammonium fluoride to convert the aluminum fluoride to aluminum nitride.

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