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    METHOD FOR CLEANING PROCESS CHAMBER
    3.
    发明申请
    METHOD FOR CLEANING PROCESS CHAMBER 审中-公开

    公开(公告)号：US20200255940A1

    公开(公告)日：2020-08-13

    申请号：US16784456

    申请日：2020-02-07

    Applicant: Applied Materials, Inc.

    Inventor： Byung Seok KWON ,  Lu XU ,  Prashant Kumar KULSHRESHTHA ,  Seoyoung LEE ,  Dong Hyung LEE ,  Kwangduk Douglas LEE

    IPC: C23C16/44 ,  H01L21/67 ,  H01J37/32

    Abstract: Implementations of the disclosure generally relate to a method of cleaning a semiconductor processing chamber. In one implementation, a method of cleaning a deposition chamber includes flowing a nitrogen containing gas into a processing region within the deposition chamber, striking a plasma in the processing region utilizing a radio frequency power, introducing a cleaning gas into a remote plasma source that is fluidly connected to the deposition chamber, generating reactive species of the cleaning gas in the remote plasma source, introducing the cleaning gas into the deposition chamber, and removing deposits on interior surfaces of the deposition chamber at different etch rates.

    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN
    4.
    发明申请
    METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 有权
    现场室清洁后过程室去除的方法

    公开(公告)号：US20140116470A1

    公开(公告)日：2014-05-01

    申请号：US14149526

    申请日：2014-01-07

    Applicant: Applied Materials, Inc.

    Inventor： Jie SU ,  Lori D. WASHINGTON ,  Sandeep NIJHAWAN ,  Olga KRYLIOUK ,  Jacob GRAYSON ,  Sang Won KANG ,  Dong Hyung LEE ,  Hua CHUNG

    IPC: C23C16/44

    CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

    Abstract: A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.

    Abstract translation: 一种用于从处理室的内表面去除沉积产物并用于防止或减缓这种沉积产物的生长的方法和装置。 将含卤素气体提供到室以蚀刻掉沉积产物。 将卤素清除气体提供到室以除去任何残留的卤素。 卤素清除气体通常通过暴露于电磁能（通过热能在处理室内）或通过电场，UV或微波在远程室中而被激活。 可以将沉积前体添加到卤素清除气体中，以在室的内表面上形成耐沉积膜。 另外，或者也可以通过在PVD工艺中将耐沉积金属溅射到处理室的内部部件上来形成耐沉积膜。

    ELECTROSTATIC CHUCK FOR DAMAGE-FREE SUBSTRATE PROCESSING
    6.
    发明申请
    ELECTROSTATIC CHUCK FOR DAMAGE-FREE SUBSTRATE PROCESSING 有权

    公开(公告)号：US20210025056A1

    公开(公告)日：2021-01-28

    申请号：US16639449

    申请日：2018-10-08

    Applicant: Applied Materials, Inc.

    Inventor： Prashant Kumar KULSHRESHTHA ,  Zheng John YE ,  Kwangduk Douglas LEE ,  Dong Hyung LEE ,  Vinay PRABHAKAR ,  Juan Carlos ROCHA-ALVAREZ ,  Xiaoquan MIN

    IPC: C23C16/458 ,  H01J37/32 ,  C23C16/50

    Abstract: Embodiments of the disclosure relate to an improved electrostatic chuck for use in a processing chamber to fabricate semiconductor devices. In one embodiment, a processing chamber includes a chamber body having a processing volume defined therein and an electrostatic chuck disposed within the processing volume. The electrostatic chuck includes a support surface with a plurality of mesas located thereon, one or more electrodes disposed within the electrostatic chuck, and a seasoning layer deposited on the support surface over the plurality of mesas. The support surface is made from an aluminum containing material. The one or more electrodes are configured to form electrostatic charges to electrostatically secure a substrate to the support surface. The seasoning layer is configured to provide cushioning support to the substrate when the substrate is electrostatically secured to the support surface.

    COATING MATERIAL FOR PROCESSING CHAMBERS
    9.
    发明申请
    COATING MATERIAL FOR PROCESSING CHAMBERS 审中-公开

    公开(公告)号：US20200058539A1

    公开(公告)日：2020-02-20

    申请号：US16520166

    申请日：2019-07-23

    Applicant: Applied Materials, Inc.

    Inventor： Sudha RATHI ,  Dong Hyung LEE ,  Abdul Aziz KHAJA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA

    IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/40

    Abstract: Embodiments described herein relate to coating materials with high resistivity for use in processing chambers. To counteract the high charges near the top surface of the thermal conductive support, the top surface of the thermal conductive support can be coated with a high resistivity layer. The high resistivity of the layer reduces the amount of charge at the top surface of the thermally conductive element, greatly reducing or preventing arcing incidents along with reducing electrostatic chucking degradation. The high resistivity layer can also be applied to other chamber components. Embodiments described herein also relate to methods for fabricating a chamber component for use in a processing environment. The component can be fabricated by forming a body of a chamber component, optionally ex-situ seasoning the body, installing the chamber component into a processing chamber, in-situ seasoning the chamber component, and performing a deposition process in the processing chamber.

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