公开(公告)号：US20200255940A1

公开(公告)日：2020-08-13

申请号：US16784456

申请日：2020-02-07

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Lu XU ,  Prashant Kumar KULSHRESHTHA ,  Seoyoung LEE ,  Dong Hyung LEE ,  Kwangduk Douglas LEE

IPC: C23C16/44 ,  H01L21/67 ,  H01J37/32

Abstract: Implementations of the disclosure generally relate to a method of cleaning a semiconductor processing chamber. In one implementation, a method of cleaning a deposition chamber includes flowing a nitrogen containing gas into a processing region within the deposition chamber, striking a plasma in the processing region utilizing a radio frequency power, introducing a cleaning gas into a remote plasma source that is fluidly connected to the deposition chamber, generating reactive species of the cleaning gas in the remote plasma source, introducing the cleaning gas into the deposition chamber, and removing deposits on interior surfaces of the deposition chamber at different etch rates.