公开(公告)号：US20190393072A1

公开(公告)日：2019-12-26

申请号：US16437048

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz KHAJA ,  Liangfa HU ,  Sudha S. RATHI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/687 ,  H01L21/67

Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.