公开(公告)号：US20150380220A1

公开(公告)日：2015-12-31

申请号：US14747367

申请日：2015-06-23

Applicant: Applied Materials, Inc.

Inventor： Tien Fak TAN ,  Dmitry LUBOMIRSKY ,  Kirby H. FLOYD ,  Son T. NGUYEN ,  David PALAGASHVILI ,  Alexander TAM ,  Shaofeng CHEN

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32522 ,  H01J37/32715

Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

Abstract translation: 本公开的实施方案通常为处理室提供改进的基座加热器。 基座加热器包括温度控制板，其具有第一表面和与第一表面相对的第二表面。 温度控制板包括内部区域，该内部区域包括第一组加热元件，外部区域包括第二组加热元件，围绕内部区域的外部区域以及设置在内部区域和外部区域之间的连续热扼流圈 以及具有与第一表面相对的第一表面和第二表面的基板接收板，基板接收板的第二表面耦合到温度控制板的第一表面。 连续热扼流圈使得能够在内部区域和外部区域之间产生和操纵非常小的温度梯度，允许在衬底的表面上实现中心快速或边缘快速蚀刻轮廓。

公开(公告)号：US20170162385A1

公开(公告)日：2017-06-08

申请号：US15435189

申请日：2017-02-16

Applicant: Applied Materials, Inc.

Inventor： Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Ramprakash SANKARAKRISHNAN ,  Robert KIM ,  Dale R. DU BOIS ,  Kirby H. FLOYD ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687 ,  C23C16/458 ,  C23C16/505

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.