公开(公告)号：US20150380220A1

公开(公告)日：2015-12-31

申请号：US14747367

申请日：2015-06-23

Applicant: Applied Materials, Inc.

Inventor： Tien Fak TAN ,  Dmitry LUBOMIRSKY ,  Kirby H. FLOYD ,  Son T. NGUYEN ,  David PALAGASHVILI ,  Alexander TAM ,  Shaofeng CHEN

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32522 ,  H01J37/32715

Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

Abstract translation: 本公开的实施方案通常为处理室提供改进的基座加热器。 基座加热器包括温度控制板，其具有第一表面和与第一表面相对的第二表面。 温度控制板包括内部区域，该内部区域包括第一组加热元件，外部区域包括第二组加热元件，围绕内部区域的外部区域以及设置在内部区域和外部区域之间的连续热扼流圈 以及具有与第一表面相对的第一表面和第二表面的基板接收板，基板接收板的第二表面耦合到温度控制板的第一表面。 连续热扼流圈使得能够在内部区域和外部区域之间产生和操纵非常小的温度梯度，允许在衬底的表面上实现中心快速或边缘快速蚀刻轮廓。

公开(公告)号：US20150134128A1

公开(公告)日：2015-05-14

申请号：US14497253

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Chetan MAHADESWARASWAMY ,  Kartik RAMASWAMY ,  Bryan LlAO ,  Sergio SHOJI ,  Duy D. NGUYEN ,  Hamid NOORBAKHSH ,  David PALAGASHVILI

IPC: G05D23/19 ,  G05B15/02 ,  H01J37/32

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

公开(公告)号：US20170011891A1

公开(公告)日：2017-01-12

申请号：US15276423

申请日：2016-09-26

Applicant: Applied Materials, Inc.

Inventor： Edward P. HAMMOND, IV ,  Jing ZOU ,  Rodolfo P. BELEN ,  Meihua SHEN ,  Nicolas GANI ,  Andrew NGUYEN ,  David PALAGASHVILI ,  Michael D. WILLWERTH

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68735

Abstract: A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

Abstract translation: 提供了一种用于等离子体蚀刻处理室中的衬底的方法和装置。 聚焦环组件围绕衬底支撑件，在衬底的边缘附近提供均匀的加工条件。 聚焦环组件包括两个环，第一环和第二环，第一环包括石英，第二环包括单晶硅，碳化硅，氮化硅，碳氧化硅，氮氧化硅或其组合。 第二环设置在基板边缘附近的第一环上方，并且在衬底的边缘上方产生均匀的电场和气体组成，导致穿过衬底表面的均匀蚀刻。

公开(公告)号：US20160254123A1

公开(公告)日：2016-09-01

申请号：US15149923

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Michael D. WILLWERTH ,  David PALAGASHVILI ,  Valentin N. TODOROW ,  Stephen YUEN

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H05B6/02

CPC classification number: H01J37/321 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H01J37/32321 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67069 ,  H05B6/02 ,  H05B6/108

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

Abstract translation: 提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。 该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，提供了一种用于调谐等离子体处理室的过程，其包括确定处理室内的等离子体的位置，选择耦合到盖式加热器的电感线圈的电感和/或位置，其将等离子体位置从 确定位置到目标位置，以及等离子体处理具有所选择的电感和/或位置的电感线圈的衬底。