公开(公告)号：US09979401B2

公开(公告)日：2018-05-22

申请号：US15654278

申请日：2017-07-19

Applicant: Georgia Tech Research Corporation

Inventor： Chenyun Pan ,  Sourav Dutta ,  Azad Naeemi

IPC: H01L43/08 ,  H03K19/20 ,  H01F10/32 ,  H01F10/14 ,  H01F10/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

CPC classification number: H03K19/20 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3218 ,  H01L27/22 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes, and prevents the racing condition.

公开(公告)号：US20180025840A1

公开(公告)日：2018-01-25

申请号：US15654115

申请日：2017-07-19

Applicant: Commissariat a l'energie atomique et aux energies alternatives

Inventor： Bertrand DELAET ,  Sophie GIROUD ,  Rachid HIDA

IPC: H01F41/02 ,  H01F41/30 ,  H01F1/00 ,  H01F7/02 ,  G01R33/028 ,  H01F10/32

CPC classification number: H01F41/0253 ,  G01R33/0052 ,  G01R33/0286 ,  G01R33/038 ,  H01F1/0009 ,  H01F7/021 ,  H01F10/30 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/30 ,  H01F41/304

Abstract: A permanent magnet including, at least once per group of ten consecutive ferromagnetic layers, a growth layer directly interposed between a top antiferromagnetic layer of a previous pattern and a bottom antiferromagnetic layer of a following pattern. This growth layer is entirely realized in a nonmagnetic material chosen from the group made up of the following metals: Ta, Cu, Ru, V, Mo, Hf, Mg, NiCr and NiFeCr, or it is realized by a stack of several sublayers of nonmagnetic material disposed immediately on one another, at least one of these sublayers being entirely realized in a material chosen from the group. The thickness of the growth layer is greater than 0.5 nm.

公开(公告)号：US09812637B2

公开(公告)日：2017-11-07

申请号：US15165322

申请日：2016-05-26

Applicant: Allegro Microsystems, LLC

Inventor： Claude Fermon ,  Paolo Campiglio ,  Bryan Cadugan

IPC: G11B5/39 ,  G01R33/09 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  G11C11/00 ,  G01R33/00 ,  H01L43/02 ,  H01L43/10 ,  B82Y10/00

CPC classification number: H01L43/08 ,  B82Y10/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.

公开(公告)号：US20160359103A1

公开(公告)日：2016-12-08

申请号：US15165322

申请日：2016-05-26

Applicant: Allegro Microsystems, LLC

Inventor： Claude Fermon ,  Paolo Campiglio ,  Bryan Cadugan

IPC: H01L43/08 ,  G01R33/09 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  B82Y10/00 ,  G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A spin valve magnetoresistance element has an even number of free layer structures for which half has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.

Abstract translation: 自旋阀磁阻元件具有偶数个自由层结构，其中一半具有反铁磁耦合，另一半具有相对于相关联的固定层的铁磁耦合。 不同的耦合是具有各自不同厚度的偶数不同间隔层的结果。

公开(公告)号：US09171559B1

公开(公告)日：2015-10-27

申请号：US14486607

申请日：2014-09-15

Applicant: Seagate Technology LLC

Inventor： Konstantin Nikolaev ,  Taras Pokhil ,  Andrzej Stankiewicz ,  Mohammed Patwari ,  Eric Singleton

IPC: G11B5/39 ,  B82Y25/00 ,  B82Y10/00

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3218 ,  Y10S977/934 ,  Y10S977/943

Abstract: A reader sensor that has a sensor stack with an AFM layer, a pinned stabilization layer, and a pinned layer, with the pinned stabilization layer closer to the AFM layer than to the pinned layer. The stack also includes a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer. A magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of a magnetic coupling between the pinned stabilization layer and the AFM layer.

Abstract translation: 读取器传感器具有传感器堆叠，具有AFM层，钉扎稳定层和被钉扎层，其中钉扎稳定层比被钉扎层更靠近AFM层。 堆叠还包括位于固定稳定层之间并与被钉扎层接触的非磁性间隔层。 钉扎稳定层与钉扎层之间的磁耦合不超过被钉扎稳定层和AFM层之间的磁耦合的50％。

公开(公告)号：US20150263269A1

公开(公告)日：2015-09-17

申请号：US14728268

申请日：2015-06-02

Applicant: Micron Technology, Inc.

Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

公开(公告)号：US08687415B2

公开(公告)日：2014-04-01

申请号：US13543090

申请日：2012-07-06

Applicant: Stuart Stephen Papworth Parkin ,  Luc Thomas ,  See-Hun Yang

Inventor： Stuart Stephen Papworth Parkin ,  Luc Thomas ,  See-Hun Yang

IPC: G11C11/14

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F1/0072 ,  H01F10/3218 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged.

Abstract translation: 当畴壁由电流脉冲驱动时，包括两个反铁磁耦​​合磁区的磁线显示改善的畴壁运动特性。 磁性区域优选包括Co，Ni和Pt并表现出垂直的磁各向异性，从而支持窄畴壁的传播。 畴壁的运动方向可能受布线布线顺序的影响。

公开(公告)号：US08679577B2

公开(公告)日：2014-03-25

申请号：US13611029

申请日：2012-09-12

Applicant: Kaizhong Gao ,  Haiwen Xi

Inventor： Kaizhong Gao ,  Haiwen Xi

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

Abstract translation: 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元 平面，例如垂直于堆叠平面。

公开(公告)号：US20140009994A1

公开(公告)日：2014-01-09

申请号：US13543090

申请日：2012-07-06

Applicant: STUART STEPHEN PAPWORTH PARKIN ,  LUC THOMAS ,  SEE-HUN YANG

Inventor： STUART STEPHEN PAPWORTH PARKIN ,  LUC THOMAS ,  SEE-HUN YANG

IPC: G11C19/00

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F1/0072 ,  H01F10/3218 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged.

Abstract translation: 当畴壁由电流脉冲驱动时，包括两个反铁磁耦​​合磁区的磁线显示改善的畴壁运动特性。 磁性区域优选包括Co，Ni和Pt并表现出垂直的磁各向异性，从而支持窄畴壁的传播。 畴壁的运动方向可能受布线布线顺序的影响。

公开(公告)号：US20130334631A1

公开(公告)日：2013-12-19

申请号：US13527262

申请日：2012-06-19

Applicant: Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

IPC: H01L29/82 ,  G11B5/673 ,  G11B5/65 ,  H01L21/34 ,  G11B5/66

CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。