公开(公告)号：US20240019509A1

公开(公告)日：2024-01-18

申请号：US18251296

申请日：2021-10-28

Applicant: CROCUS Technology SA

Inventor： Jeffrey Childress ,  Nikita Strelkov ,  Andrey Timopheev

IPC: G01R33/09 ,  G01R33/00 ,  H01F1/00

CPC classification number: G01R33/098 ,  G01R33/093 ,  G01R33/0052 ,  H01F1/0009

Abstract: A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

公开(公告)号：US11875934B2

公开(公告)日：2024-01-16

申请号：US16423516

申请日：2019-05-28

Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA

Inventor： Jian-Ping Wang ,  Md Mehedi ,  YanFeng Jiang ,  Bin Ma ,  Delin Zhang ,  Fan Zhang ,  Jinming Liu

IPC: C01B21/06 ,  H01F1/10 ,  C22C38/00 ,  H01F41/02 ,  H01F1/03 ,  C22C38/06 ,  H01F1/00 ,  C22C38/16

CPC classification number: H01F41/0253 ,  C01B21/0622 ,  H01F1/10 ,  C21D2201/05 ,  C21D2211/008 ,  C22C38/001 ,  C22C38/06 ,  C22C38/16 ,  C22C2200/04 ,  C22C2202/02 ,  H01F1/0009 ,  H01F1/03

Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an α″-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material. The method includes some combinations of preparing a raw material comprising iron, carrying out a microstructure build-up by annealing the prepared raw material at an elevated temperature and subsequently quenching the prepared raw material to produce a microstructure build-up material, annealing the microstructure build-up material, reducing the microstructure build-up material in a hydrogen environment, nitriding the reduced material to produce a nitrided material and subsequently quenching the nitrided material to a martensitic transformation temperature, stress annealing the nitrided material, and magnetic field annealing the stress-annealed material.

公开(公告)号：US20180138231A1

公开(公告)日：2018-05-17

申请号：US15805743

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Unjeong KIM ,  Younggeun ROH ,  Jaeseok KIM ,  Chihun IN ,  Hyunyong CHOI ,  Jaehyun KWON

IPC: H01L27/146 ,  H01L31/08 ,  H01L43/08 ,  H01L31/0232 ,  H01L31/0296

CPC classification number: H01L27/14649 ,  H01F1/0009 ,  H01L27/1462 ,  H01L27/14625 ,  H01L29/785 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/08 ,  H01L31/09 ,  H01L31/112 ,  H01L43/08 ,  H01L49/006 ,  Y02E10/547

Abstract: An optical sensor is disclosed. The optical sensor may include a substrate, a topological insulator layer formed on the substrate, an oxide layer formed on the topological insulator layer, a graphene layer stacked on the oxide layer, and a dielectric layer covering the graphene layer.

公开(公告)号：US20170053724A1

公开(公告)日：2017-02-23

申请号：US15307265

申请日：2015-04-16

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Bertrand DELAET ,  Mathilde CARTIER ,  Marie-Claire CYRILLE

IPC: H01F7/02 ,  H01F41/02 ,  H01F1/00

CPC classification number: H01F7/021 ,  G01R33/0286 ,  H01F1/0009 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/0253 ,  H01F41/30

Abstract: A permanent magnet includes at least two antiferromagnetic layers and at least two first ferromagnetic layers. A magnetization direction of each first ferromagnetic layer is set, by an exchange coupling, with one of the antiferromagnetic layers of the stack, parallel to and in the same direction as the magnetization directions of the other first ferromagnetic layers. The permanent magnet also includes at least one second ferromagnetic layer. A magnetization direction of each second ferromagnetic layer is pinned only by RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling with at least one of the first ferromagnetic layers or with at least one other of the second ferromagnetic layers.

Abstract translation: 永磁体包括至少两个反铁磁层和至少两个第一铁磁层。 每个第一铁磁层的磁化方向通过交换耦合与堆叠的反铁磁层之一平行并沿与其它第一铁磁层的磁化方向相同的方向来设定。 永磁体还包括至少一个第二铁磁层。 每个第二铁磁层的磁化方向仅由RKKY（Ruderman-Kittel-Kasuya-Yosida）与至少一个第一铁磁层或至少另一个第二铁磁层耦合固定。

公开(公告)号：US08999189B2

公开(公告)日：2015-04-07

申请号：US13036983

申请日：2011-02-28

Applicant: P. Shiv Halasyamani ,  Hong-Young Chang

Inventor： P. Shiv Halasyamani ,  Hong-Young Chang

IPC: H01F1/01 ,  C30B7/10 ,  C30B29/12 ,  C01G45/00 ,  C01G51/00 ,  C01G53/00 ,  C01G9/00 ,  H01F1/00

CPC classification number: H01F1/01 ,  C01G9/006 ,  C01G45/006 ,  C01G51/006 ,  C01G53/006 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2006/10 ,  C01P2006/42 ,  C30B7/10 ,  C30B29/12 ,  H01F1/0009

Abstract: A method for synthesis of a ferroelectric material characterized by the general formula AxByFz where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.

Abstract translation: 一种用于合成铁电材料的方法，其特征在于通式AxByFz，其中A是碱土金属，B是过渡金属或主族金属，x和y各自在约1至约5的范围内，z的范围为约1 包括使介质中的碱土金属氟化物，二氟金属化合物和氟代有机酸接触以形成反应混合物; 并对反应混合物进行适合于水热晶体生长的条件。

公开(公告)号：US20110240909A1

公开(公告)日：2011-10-06

申请号：US13029348

申请日：2011-02-17

Applicant: Takayuki KANDA ,  Matahiro Komuro ,  Hiroyuki Suzuki ,  Yuichi Satsu

Inventor： Takayuki KANDA ,  Matahiro Komuro ,  Hiroyuki Suzuki ,  Yuichi Satsu

IPC: H01F1/04 ,  H01F1/00

CPC classification number: H01F1/058 ,  H01F1/0009 ,  H01F1/0555 ,  H01F1/0575 ,  H01F1/0596 ,  H01F41/0293

Abstract: Characteristics of a magnetic material are improved without using a heavy rare earth element as a scarce resource. By incorporating fluorine into a magnetic powder and controlling the crystal orientation in crystal grains, a magnetic material securing magnetic characteristics such as coercive force and residual flux density can be fabricated. As a result, the resource problem with heavy rare earth elements can be solved, and the magnetic material can be applied to magnetic circuits that require a high energy product, including various rotating machines and voice coil motors of hard discs.

Abstract translation: 不使用重稀土元素作为稀有资源，磁性材料的特性得到改善。 通过将氟加入到磁性粉末中并控制晶粒中的晶体取向，可以制造确保矫顽磁力和残余磁通密度等磁特性的磁性材料。 结果，可以解决重稀土元素的资源问题，并且可以将磁性材料应用于需要高能量产物的磁路，包括各种旋转机器和硬盘的音圈电机。

公开(公告)号：US20110220836A1

公开(公告)日：2011-09-15

申请号：US13036983

申请日：2011-02-28

Applicant: P. Shiv HALASYAMANI ,  Hong-Young CHANG

Inventor： P. Shiv HALASYAMANI ,  Hong-Young CHANG

IPC: H01F1/01

CPC classification number: H01F1/01 ,  C01G9/006 ,  C01G45/006 ,  C01G51/006 ,  C01G53/006 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2006/10 ,  C01P2006/42 ,  C30B7/10 ,  C30B29/12 ,  H01F1/0009

Abstract: A method for synthesis of a ferroelectric material characterized by the general formula AxByFz where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.

Abstract translation: 一种用于合成铁电材料的方法，其特征在于通式AxByFz，其中A是碱土金属，B是过渡金属或主族金属，x和y各自在约1至约5的范围内，z的范围为约1 包括使介质中的碱土金属氟化物，二氟金属化合物和氟代有机酸接触以形成反应混合物; 并对反应混合物进行适合于水热晶体生长的条件。

公开(公告)号：US20090224340A1

公开(公告)日：2009-09-10

申请号：US11573509

申请日：2005-09-09

Applicant: Hisazumi Akai ,  Masako Ogura

Inventor： Hisazumi Akai ,  Masako Ogura

IPC: H01L29/82 ,  H01L43/12

CPC classification number: C30B29/48 ,  C30B23/02 ,  C30B25/02 ,  H01F1/0009 ,  H01F1/402 ,  H01F1/404 ,  H01F1/408 ,  H01L29/24

Abstract: An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.

Abstract translation: 本发明的反铁磁半金属半导体是通过向半导体中添加具有d电子数小于5的磁性元素和d电子数多的磁性元素的两种以上的磁性元素 超过五个，并且用两种或更多种类型的磁性元件代替半导体的一部分元素。

公开(公告)号：US20080087972A1

公开(公告)日：2008-04-17

申请号：US11578437

申请日：2005-05-17

Applicant: Venkat Rao ,  Parmanand Sharma ,  Amita Gupta

Inventor： Venkat Rao ,  Parmanand Sharma ,  Amita Gupta

IPC: H01L29/82 ,  H01L21/00

CPC classification number: H01L29/227 ,  H01F1/0009 ,  H01F1/404 ,  H01F1/407 ,  H01F10/193 ,  H01L43/10

Abstract: A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between −55° C. and 125° C. Typically the material may comprise GaP or GaN.

Abstract translation: 半导体材料，材料的制造方法和实施材料的方法，其中所述材料掺杂有Cu或CuO，并且至少在-55℃和125℃之间的至少一个温度下是铁磁性的 通常，材料可以包括GaP或GaN。

公开(公告)号：US20050196454A1

公开(公告)日：2005-09-08

申请号：US10887312

申请日：2004-07-09

Applicant: Victor Baranauskas ,  Judy Riffle

Inventor： Victor Baranauskas ,  Judy Riffle

IPC: A61K9/14 ,  H01F1/26

CPC classification number: H01F1/442 ,  B22F2998/00 ,  C22C2202/02 ,  H01F1/0009 ,  H01F1/0054 ,  B22F1/0018 ,  B22F2303/01 ,  B22F2301/15 ,  B22F2301/25

Abstract: Oxidatively-stable, magnetic cobalt nanoparticles and other Group VIII nanoparticles are provided, and production methods. Poly(styrene-b-4-vinylphenoxyphthalonitrile) (a novel composition) or random graft copolymers containing phthalonitrile groups in the backbone are examples of compositions that may be complexed with cobalt or other Group VIII metals.

Abstract translation: 提供了氧化稳定的磁性钴纳米颗粒和其他第VIII族纳米颗粒，并提供了生产方法。 在主链中含有邻苯二甲腈基团的聚（苯乙烯-b-4-乙烯基苯氧基邻苯二甲腈）（新组合物）或无规接枝共聚物是可与钴或其它VIII族金属络合的组合物的实例。